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SPICE MODEL of SSM3K36FS (Professional+BDP Model) in SPICE PARK
 

SPICE MODEL of SSM3K36FS (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of SSM3K36FS (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SSM3K36FS (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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    SPICE MODEL of SSM3K36FS (Professional+BDP Model) in SPICE PARK SPICE MODEL of SSM3K36FS (Professional+BDP Model) in SPICE PARK Document Transcript

    • Device Modeling Report COMPONENTS: MOSFET (Professional Model) PART NUMBER: SSM3K36FS MANUFACTURER: TOSHIBA REMARK: Body Diode (Professional Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
    • MOSFET MODEL PSpice model parameter LEVEL L W KP RS RD VTO RDS TOX CGSO CGDO CBD MJ PB FC RG IS N RB PHI GAMMA DELTA ETA THETA KAPPA VMAX XJ UO Model description Channel Length Channel Width Transconductance Source Ohmic Resistance Ohmic Drain Resistance Zero-bias Threshold Voltage Drain-Source Shunt Resistance Gate Oxide Thickness Zero-bias Gate-Source Capacitance Zero-bias Gate-Drain Capacitance Zero-bias Bulk-Drain Junction Capacitance Bulk Junction Grading Coefficient Bulk Junction Potential Bulk Junction Forward-bias Capacitance Coefficient Gate Ohmic Resistance Bulk Junction Saturation Current Bulk Junction Emission Coefficient Bulk Series Resistance Surface Inversion Potential Body-effect Parameter Width effect on Threshold Voltage Static Feedback on Threshold Voltage Mobility Modulation Saturation Field Factor Maximum Drift Velocity of Carriers Metallurgical Junction Depth Surface Mobility All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
    • Transconductance Characteristics Circuit Simulation result VDS=3V Comparison table gfs (S) ID (mA) Measurement Simulation %Error 50 0.367 0.371 1.09 100 0.520 0.525 0.96 200 0.750 0.743 -0.93 500 1.189 1.175 -1.18 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
    • Vgs-Id Characteristics Circuit Simulation result 1.0A 100mA 10mA 1.0mA 0V 1.0V 2.0V 3.0V -I(VDS) V_VGS Evaluation circuit U1 SSM3K36FS VDS 3V VGS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
    • Comparison Graph Circuit Simulation result VDS=3V Comparison table VGS (V) ID (mA) Measurement Simulation %Error 1 0.663 0.667 0.60 2 0.688 0.683 -0.73 5 0.735 0.714 -2.86 10 0.775 0.749 -3.35 20 0.830 0.799 -3.73 50 0.925 0.898 -2.92 100 1.012 1.010 -0.20 200 1.140 1.167 2.37 500 1.430 1.482 3.64 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
    • Rds(on) Characteristics Circuit Simulation result 200mA 150mA 100mA 50mA 0A 0V 20mV -I(VDS) 40mV 60mV 80mV 100mV V_VDS Evaluation circuit U1 SSM3K36FS VDS VGS 5V 0 Test condition: VGS=(5V), ID=(200mA) Parameter Unit RDS(on) Ω Measurement 0.460 Simulation 0.459 %Error -0.22 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
    • Output Characteristics Circuit Simulation result 1.0A 10V 0.9A 2.5V 0.8A 1.8V 4.5V 0.7A 0.6A 1.5V 0.5A 0.4A 0.3A VGS=1.2V 0.2A 0.1A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V -I(VDS) V_VDS Evaluation circuit U1 SSM3K36FS VDS VGS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
    • Capacitance Characteristics Simulation result Measurement Simulation Comparison table Cbd (pF) VDS (V) Measurement Simulation %Error 0.1 12.000 12.030 0.25 0.5 8.500 8.472 -0.33 1 6.760 6.880 1.78 5 4.370 4.300 -1.60 10 3.300 3.250 -1.52 20 2.700 2.710 0.37 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
    • Gate Charge Characteristics Circuit Simulation result 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0s 0.5ns V(W1:3) 1.0ns 1.5ns 2.0ns 2.5ns 3.0ns D1 DMod ID 0.5A Time*1m Evaluation circuit U1 SSM3K36FS W1 VDD 10V + I1 = 0 I2 = 1m TF = 10n TR = 10n TD = 0 PER = 1 PW = 10m IG W IOFF = 1mA ION = 0 0 Test condition: VDD=(10V), VGS=(4V), ID=(0.5A) Parameter Unit Measurement Simulation %Error Qgs nc 0.240 0.242 0.83 Qgd nc 0.565 0.564 -0.18 Qg nc 1.230 1.231 0.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
    • Switching Time Characteristics Circuit Simulation result 15V 10V 5V 0V 1.88us V(G)*4 1.96us V(D) 2.04us 2.12us 2.20us Time Evaluation circuit L2 D 2 1 30nH U1 SSM3K36FS RL 50 L1 30nH R1 V1 = 0 V2 = 5 TD = 2u TR = 2.5n TF = 2.5n PW = 10u PER = 1000u 2 V1 1 G VDD 10 50 R2 50 0 Test condition: VDD=(10V), VGS=0/2.5(V), ID=(200mA) Parameter Unit ton ns Measurement 30.000 Simulation 30.490 %Error 1.63 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
    • Body Diode Forward Current Characteristics Circuit Simulation result 1.0A 100mA 10mA 1.0mA 100uA 0V -0.2V -0.4V I(VDS) -0.6V -0.8V -1.0V -1.2V -1.4V V_VDS Evaluation circuit U1 SSM3K36FS VDS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
    • Comparison Graph Simulation result 1000 Measurement Drian reverse current IDR (mA) Simulation 100 10 1 0.1 0.0 0.5 1.0 1.5 Drain - source voltage -VDS (V) Comparison table -VDS (V) IDR (mA) Measurement Simulation %Error 0.1 0.538 0.534 -0.74 0.5 0.587 0.587 0.00 1 0.608 0.610 0.33 5 0.660 0.658 -0.30 10 0.685 0.679 -0.88 50 0.740 0.736 -0.54 100 0.772 0.765 -0.91 500 0.880 0.868 -1.36 1000 0.960 0.952 -0.83 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12
    • Reverse Recovery Characteristics Circuit Simulation result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 9.88us 9.96us I(R1) 10.04us 10.12us 10.20us Time Evaluation circuit R1 50 V1 = -9.2V V2 = 10.7V TD = 25ns TR = 10ns TF = 10ns PW = 10us PER = 1ms U1 DSSM3K36FS_P V1 0 Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 12.000 11.786 -1.78 trb ns 26.000 25.946 -0.21 trr ns 38.000 37.732 -0.71 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 13
    • Reverse Recovery Characteristics Reference Measurement Trj = 12(ns) Trb = 26(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 14
    • ESD PROTECTION DIODE Zener Voltage Characteristics Circuit Simulation result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V -I(VGS) 15V 20V 25V 30V 35V 40V 45V 50V V_VGS Evaluation circuit U1 SSM3K36FS R1 1G VGS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 15
    • Zener Voltage Characteristics Reference Measurement IZ = 1(mA) VZ = 15.10(V) at IZ=1mA All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 16