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SPICE MODEL of SSM3J35CT (Professional+BDP Model) in SPICE PARK
 

SPICE MODEL of SSM3J35CT (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of SSM3J35CT (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SSM3J35CT (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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    SPICE MODEL of SSM3J35CT (Professional+BDP Model) in SPICE PARK SPICE MODEL of SSM3J35CT (Professional+BDP Model) in SPICE PARK Document Transcript

    • Device Modeling Report COMPONENTS: MOSFET (Professional Model) PART NUMBER: SSM3J35CT MANUFACTURER: TOSHIBA REMARK: Body Diode (Professional Model) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 1
    • MOSFET MODEL PSpice model parameter LEVEL L W KP RS RD VTO RDS TOX CGSO CGDO CBD MJ PB FC RG IS N RB PHI GAMMA DELTA ETA THETA KAPPA VMAX XJ UO Model description Channel Length Channel Width Transconductance Source Ohmic Resistance Ohmic Drain Resistance Zero-bias Threshold Voltage Drain-Source Shunt Resistance Gate Oxide Thickness Zero-bias Gate-Source Capacitance Zero-bias Gate-Drain Capacitance Zero-bias Bulk-Drain Junction Capacitance Bulk Junction Grading Coefficient Bulk Junction Potential Bulk Junction Forward-bias Capacitance Coefficient Gate Ohmic Resistance Bulk Junction Saturation Current Bulk Junction Emission Coefficient Bulk Series Resistance Surface Inversion Potential Body-effect Parameter Width effect on Threshold Voltage Static Feedback on Threshold Voltage Mobility Modulation Saturation Field Factor Maximum Drift Velocity of Carriers Metallurgical Junction Depth Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 2
    • Transconductance Characteristics Circuit Simulation Result 300 Measurement Simulation gfs (mS) 200 100 0 0 100 200 Drain current ID (-mA) Comparison table Id(-mA) gfs (ms) Measurement Simulation %Error 5 10 40.000 57.000 40.806 57.700 2.01 1.23 20 82.000 81.582 -0.51 50 131.000 128.933 -1.58 100 200 186.000 265.000 182.239 257.534 -2.02 -2.82 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 3
    • Vgs-Id Characteristics Circuit Simulation result -1.0A -1.0mA 0V -0.2V I(V3) -0.6V -1.0V -1.4V -1.8V -2.2V -2.6V -3.0V V_V1 Evaluation circuit V3 0Vdc V2 U1 SSM3J35CT -3 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 4
    • Comparison Graph Circuit Simulation Result 1000 Measurement Drain current ID (-mA) Simulation 100 10 1 0 1 2 3 Gate-source voltage V GS (-V) Simulation Result ID(-mA) 1 2 5 10 20 50 100 200 VGS(-V) Measurement 0.670 0.730 0.820 0.920 1.040 1.290 1.600 2.050 Simulation 0.675 0.720 0.811 0.912 1.056 1.341 1.662 2.117 %Error 0.74 -1.31 -1.16 -0.87 1.50 3.92 3.87 3.25 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 5
    • Rds(on) Characteristics Circuit Simulation result -50mA -25mA 0A 0V -20mV I(V3) -60mV -100mV -140mV -180mV -220mV V_VDS Evaluation circuit V3 0Vdc VDS U1 SSM3J35CT 0Vdc V1 -4 0 Simulation Result ID = -50mA, VGS = -4V R DS (on)  Measurement 4.300 Simulation 4.300 %Error 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 6
    • Gate Charge Characteristics Circuit Simulation result -8.0V -7.0V -6.0V -5.0V -4.0V -3.0V -2.0V -1.0V 0V 0 0.2n 0.4n 0.6n 0.8n 1.0n V(W1:4) Time*1mA Evaluation circuit ION = 0uA IOFF = 1mA W I2 100m VDD + I1 - I1 = 0 I2 = 1m TD = 0 TR = 0.5n TF = 1n PW = 600u PER = 1000u U1 D2 SSM3J35CTDbreak W1 -16 0 Simulation Result VDD=-16V, ID=-0.1A, VGS=-4V Qgs nC Qgd nC Qg nC Measurement 0.070 0.100 0.480 Simulation %Error 0.068 0.102 0.480 -2.60 2.27 0.07 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 7
    • Gate Charge Characteristics Reference Gate-Source Volatge Vgs (-V) 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 Gate Charge Qg(nc) All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 8
    • Capacitance Characteristics Measurement Simulation Simulation Result VDS (-V) 0.1 0.2 0.5 1 2 5 10 20 Cbd (pF) Measurement Simulation 26.000 25.900 21.000 21.100 14.200 14.220 9.800 9.750 6.300 6.388 3.400 3.514 2.200 2.200 1.400 1.370 %Error -0.38 0.48 0.14 -0.51 1.40 3.35 0.00 -2.14 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 9
    • Switching Time Characteristics Circuit Simulation result -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V -1.0V -0.5V 0V 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us 1.8us 2.0us 2.2us 2.4us V(U1:G) V(U1:D) Time Evaluation circuit L2 30nH R1 50 PER = 1m PW = 10u TF = 4n TR = 4n TD = 1u V2 = 5 V1 = 0 RL 54 L1 U1 SSM3J35CT VDD -3Vdc 30nH R2 50 V2 0 Simulation Result ID=-50mA, VDD=-3V VGS=-2.5/0V ton ns Measurement 175.000 Simulation %Error 172.011 -1.71 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 10
    • Output Characteristics Circuit Simulation result -250mA -10 -4 -2.5 -200mA -150mA -1.8 -100mA -1.5 -50mA VGS = -1.2V 0A 0V -0.5V -1.0V -1.5V -2.0V I(V3) V_V2 Evaluation circuit V3 0Vdc V2 U1 SSM3J35CT V1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 11
    • Forward Current Characteristics Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V I(Vsense) 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V V_VDS Evaluation Circuit Vsense 0Vdc VDS U1 SSM3J35CT 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 12
    • Comparison Graph Circuit Simulation Result 1000 Drian reverse current IDR (mA) Measurement Simulation 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain - source voltage VDS (V) Simulation Result IDR(mA) 0.01 0.1 1 10 20 50 100 200 VDS(V) Measurement Simulation 0.480 0.482 0.565 0.561 0.640 0.628 0.720 0.715 0.745 0.742 0.785 0.779 0.810 0.809 0.845 0.844 %Error 0.37 -0.65 -1.90 -0.74 -0.43 -0.80 -0.13 -0.17 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 13
    • Reverse Recovery Characteristics Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 9.7us 9.8us 9.9us I(R1) 10.1us 10.3us 10.5us 10.7us Time Evaluation Circuit R1 50 V1 = -9.2V V2 = 10.9v TD = 70ns TR = 15ns TF = 15ns PW = 10us PER = 100us V1 U1 DSSM3J35CT_P 0 Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 26.000 25.529 -1.81 trb ns 66.000 66.318 0.48 trr ns 92.000 91.847 -0.17 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 14
    • Reverse Recovery Characteristics Reference Measurement Trj= 26.00 (ns) Trb= 66.00 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 15
    • Zener Voltage Characteristics Circuit Simulation Result -10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA 0A 0V -5V I(R1) -10V -15V -20V -25V -30V -35V -40V -45V V_V1 Evaluation Circuit R1 R2 U1 SSM3J35CT 100MEG V1 0.001m 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 16
    • Zener Voltage Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 17