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Device Modeling ReportCOMPONENTS: Power MOSFET (Professional)PART NUMBER: SPU02N60C3MANUFACTURER: Infineon technologiesREM...
POWER MOSFET MODEL Pspice model                                       Model description  parameter   LEVEL       L        ...
Body Diode Model Pspice model                                       Model description  parameter       IS       Saturation...
Transconductance CharacteristicCircuit Simulation ResultComparison table                                       gfs (S)    ...
Vgs-Id CharacteristicCircuit Simulation result            2.0A            1.0A              0A                   0V       ...
Comparison GraphCircuit Simulation ResultSimulation Result                                       VGS(V)     ID(A)         ...
Id-Rds(on) CharacteristicCircuit Simulation result            2.0A            1.0A              0A                   0V   ...
Id-Rds(on) Characteristic                                                Reference          All Rights Reserved Copyright ...
Gate Charge CharacteristicCircuit Simulation result                        16V                        14V                 ...
Capacitance Characteristic                                                          Measurement                           ...
Switching Time CharacteristicCircuit Simulation result                           12V                                      ...
Output CharacteristicCircuit Simulation result             2.0A                          7.0V               6.0V          ...
Output Characteristic                                                    Reference          All Rights Reserved Copyright ...
Forward Current Characteristic of Reverse DiodeCircuit Simulation Result                 2.0A                 1.0A        ...
Comparison GraphCircuit Simulation ResultSimulation Result                          Vfwd(V)                   Vfwd(V)     ...
Forward Current Characteristic                                           Reference          All Rights Reserved Copyright ...
Reverse Recovery CharacteristicCircuit Simulation Result                10A                 0A               -10A         ...
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SPICE MODEL of SPU02N60C3 (Professional+BDSP Model) in SPICE PARK

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SPICE MODEL of SPU02N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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Transcript of "SPICE MODEL of SPU02N60C3 (Professional+BDSP Model) in SPICE PARK"

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Professional)PART NUMBER: SPU02N60C3MANUFACTURER: Infineon technologiesREMARK: Body Diode (Special) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Transconductance CharacteristicCircuit Simulation ResultComparison table gfs (S) ID(A) Error (%) Measurement Simulation 0.2 0.675 0.685 1.48 0.5 1.1 1.08 -1.82 1 1.53 1.52 -0.65 2 2.1 2.1275 1.31 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Vgs-Id CharacteristicCircuit Simulation result 2.0A 1.0A 0A 0V 5V 10V I(V2) V_V1Evaluation circuit V2 0V dc U1 V3 V1SP U0 2N6 0C3P_ DS P 10 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.2 3.945 3.9604 0.39 0.5 4.295 4.3003 0.123 1 4.675 4.6851 0.216 2 5.24 5.2322 -0.149 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Id-Rds(on) CharacteristicCircuit Simulation result 2.0A 1.0A 0A 0V 2.5V 5.0V I(V2) V_V3Evaluation circuit V2 0Vdc U1 V3 V1SPU02N60C3P_DSP 10Vdc 10.0Vdc 0Simulation Result ID=1.1, VGS=10V Measurement Simulation Error (%) R DS (on) 2.291  2.2911  0.004 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Id-Rds(on) Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Gate Charge CharacteristicCircuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 2n 4n 6n 8n 10n 12n 14n V(W1:3) Time*10msEvaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u U3 I2 TF = 10n W1 SPU02N60C3P_DSP 1.8Adc TR = 10n + TD = 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 520Vdc 0Simulation Result VDD=520V,ID=1.8A Measurement Simulation Error (%) Qgs 1.6 nC 1.6095 nC 0.59 Qgd 4.4 nC 4.3959 nC -0.09 Qg 9.5 nC 96.45 nC 1.53 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0 354 354.15 0.042373 10 200 199.77 -0.115 25 86 85.5 -0.581395 50 21 21.4 1.904762 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Switching Time CharacteristicCircuit Simulation result 12V VDS =380 (V) VGS = 10V 8V 4V 0V 5.00us 5.05us 5.10us 5.15us V(2) V(3)/35 TimeEvaluation circuit L1 RL 3 V3 0.0 5u H 19 2 0V dc VDD 35 0 L2 RG 2 0.0 3u H 50 U3 V1 = 0 SP U0 2N6 0C3P_ DSP 0 V1 V2 = 10 TD = 5u TR = 6n TF = 7n PW = 1 0u PE R = 10 0u 0 0Simulation Result ID=1.8A, VDD=350V Measurement Simulation Error(%) VGS=0/10V td (on) 6.000 ns 6.089 ns 1.483 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Output CharacteristicCircuit Simulation result 2.0A 7.0V 6.0V 5.0V 1.0A 4.5V VGS=4.0V 0A 0V 10V 20V I(V2) V_V3Evaluation circuit V2 0V dc U1 V3 V1SP U0 2N6 0C3P_ DS P 10 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Forward Current Characteristic of Reverse DiodeCircuit Simulation Result 2.0A 1.0A 0A 0V 1.0V 2.0V I(V2) V_V3Evaluation Circuit R1 0.0 1m V2 U2 SP U0 2N6 0C3P_ DS P 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.01 0.598 0.602187 0.700 0.02 0.634 0.627996 -0.947 0.05 0.662 0.662797 0.120 0.1 0.690 0.690066 0.010 0.2 0.718 0.719109 0.154 0.5 0.764 0.763462 -0.070 1 0.806 0.806715 0.089 2 0.868 0.867726 -0.032 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  16. 16. Forward Current Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  17. 17. Reverse Recovery CharacteristicCircuit Simulation Result 10A 0A -10A 10.0us 10.1us 10.2us 10.3us 10.4us 10.5us I(R1) TimeEvaluation Circuit R1 1 10 U1 D02N60C3_SP V1 = -420 V2 = 90 V1 TD = 0 TR = 20n TF = {20*X} PW = 1u PER = 10u 0 PARAMETERS: X = 25.5n 0Compare Measurement vs. Simulation Measurement Simulation Error(%) trr 200 ns 200.27 ns 0.135 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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