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Device Modeling Report



COMPONENTS: Power MOSFET (Professional)
PART NUMBER: SPD02N60C3
MANUFACTURER: Infineon technologies
REMARK: Body Diode (Special)




                Bee Technologies Inc.


  All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
POWER MOSFET MODEL
 Pspice model
                                       Model description
  parameter
   LEVEL
       L        Channel Length
      W         Channel Width
      KP        Transconductance
      RS        Source Ohmic Resistance
      RD        Ohmic Drain Resistance
     VTO        Zero-bias Threshold Voltage
     RDS        Drain-Source Shunt Resistance
     TOX        Gate Oxide Thickness
    CGSO        Zero-bias Gate-Source Capacitance
    CGDO        Zero-bias Gate-Drain Capacitance
     CBD        Zero-bias Bulk-Drain Junction Capacitance
      MJ        Bulk Junction Grading Coefficient
      PB        Bulk Junction Potential
      FC        Bulk Junction Forward-bias Capacitance Coefficient
      RG        Gate Ohmic Resistance
      IS        Bulk Junction Saturation Current
       N        Bulk Junction Emission Coefficient
      RB        Bulk Series Resistance
     PHI        Surface Inversion Potential
   GAMMA        Body-effect Parameter
    DELTA       Width effect on Threshold Voltage
     ETA        Static Feedback on Threshold Voltage
   THETA        Modility Modulation
   KAPPA        Saturation Field Factor
    VMAX        Maximum Drift Velocity of Carriers
      XJ        Metallurgical Junction Depth
      UO        Surface Mobility




         All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Body Diode Model
 Pspice model
                                       Model description
  parameter
       IS       Saturation Current
       N        Emission Coefficient
      RS        Series Resistance
      IKF       High-injection Knee Current
     CJO        Zero-bias Junction Capacitance
       M        Junction Grading Coefficient
       VJ       Junction Potential
     ISR        Recombination Current Saturation Value
      BV        Reverse Breakdown Voltage(a positive value)
     IBV        Reverse Breakdown Current(a positive value)
       TT       Transit Time




         All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Transconductance Characteristic

Circuit Simulation Result




Comparison table

                                       gfs (S)
     ID(A)                                                                Error (%)
                     Measurement                  Simulation
             0.2                   0.675                      0.685              1.48
             0.5                     1.1                       1.08             -1.82
               1                    1.53                       1.52             -0.65
              2                       2.1                    2.1275              1.31




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Vgs-Id Characteristic

Circuit Simulation result

            2.0A




            1.0A




              0A
                   0V                                   5V               10V
                        I(V2)
                                                      V_V1



Evaluation circuit




                                                                V2


                                                               0V dc

                                                   U1           V3
                                    V1SP D0 2N6 0C3P_ DS P

                                                               10 Vd c
                        10 .0Vd c




                                                         0




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph

Circuit Simulation Result




Simulation Result

                                       VGS(V)
     ID(A)                                                                Error (%)
                     Measurement                  Simulation
             0.2                   3.945                     3.9604              0.39
             0.5                   4.295                     4.3003             0.123
               1                   4.675                     4.6851             0.216
               2                    5.24                     5.2322            -0.149




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Id-Rds(on) Characteristic

Circuit Simulation result

            2.0A




            1.0A




              0A
                   0V                                2.5V                      5.0V
                        I(V2)
                                                     V_V3


Evaluation circuit



                                                                   V2


                                                                   0Vdc

                                                 U1                V3
                                     V1SPD02N60C3P_DSP

                                                                   10Vdc
                           10.0Vdc




                                                      0


Simulation Result

    ID=1.1, VGS=10V             Measurement                 Simulation         Error (%)
        R DS (on)                      2.291                  2.2911                0.004



              All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Id-Rds(on) Characteristic                                                Reference




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Gate Charge Characteristic
Circuit Simulation result

                           16V


                           14V


                           12V


                           10V


                            8V


                            6V


                            4V


                            2V


                            0V
                                 0      2n        4n     6n        8n    10n        12n       14n
                                     V(W1:3)
                                                           Time*10ms




Evaluation circuit

                                                                               V2


                                                                                      0V dc

                                                                                              Db reak


          PE R = 10 00 u                                                                       D1
          PW = 6 00 u                                          U2                                         I2
          TF = 10 n                      W1       SP D0 2N6 0C3P_ DS P                                    1.8 Adc
          TR = 10n                         +
          TD = 0
          I2 = 1 0m
                                              -
                           I1            W
          I1 = 0                         IOFF = 1mA                                                       V1
                                         ION = 0 uA                                                       52 0V dc




                                                                     0


Simulation Result

     VDD=520V,ID=1.8A                    Measurement                     Simulation                     Error (%)

              Qgs                                      1.6 nC             1.6095 nC                                   0.59
              Qgd                                      4.4 nC             4.3959 nC                                  -0.09
              Qg                                       9.5 nC              96.45 nC                                   1.53


                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Capacitance Characteristic




                                                          Measurement
                                                          Simulation




Simulation Result

                                      Cbd(pF)
        VDS(V)                                                         Error(%)
                         Measurement           Simulation
                    0                 354               354.15           0.042373
                    10                200               199.77              -0.115
                    25                 86                  85.5         -0.581395
                    50                 21                  21.4          1.904762




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Switching Time Characteristic

Circuit Simulation result
                        12V
                                     VDS =380 (V)



                                                                                       VGS = 10V
                         8V




                         4V




                         0V
                         5.00us               5.05us              5.10us                   5.15us
                              V(2)        V(3)/35
                                                       Time




Evaluation circuit

                                                                                  L1         RL

                                                                         3
                                                                             V3   0.05uH     192
                                                                  0Vdc



                                                                                                      VDD
                                                                                              350
                                     L2           RG
                                                              2
                                     0.03uH
                                                  50               U2
           V1 = 0                                        SPD02N60C3P_DSP                             0
                        V1
           V2 = 10
           TD = 5u
           TR = 6n
           TF = 7n
           PW = 10u
           PER = 100u
                                                                             0
                        0



Simulation Result

     ID=1.8A, VDD=350V
                                     Measurement                  Simulation                        Error(%)
         VGS=0/10V
           td (on)                            6.000 ns                   6.089 ns                           1.483




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output Characteristic

Circuit Simulation result

             2.0A

                         7.0V            6.0V


                                                                5.0V




             1.0A



                                                                  4.5V




                                                          VGS=4.0V

               0A
                    0V                              10V                  20V
                         I(V2)
                                                   V_V3




Evaluation circuit




                                                                V2


                                                               0V dc

                                                U1              V3
                                 V1SP D0 2N6 0C3P_ DS P

                                                               10 Vd c
                     10 .0Vd c




                                                      0




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output Characteristic                                                    Reference




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Forward Current Characteristic of Reverse Diode
Circuit Simulation Result

                 2.0A




                 1.0A




                     0A
                          0V                    1.0V                 2.0V
                               I(V2)
                                                V_V3




Evaluation Circuit


                                       R1

                                       0.0 1m
                 V2                                    U1
                                                        SP D0 2N6 0C3P_ DS P
                0V dc

                 V3


                0V dc




                                                 0




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph

Circuit Simulation Result




Simulation Result

                          Vfwd(V)                   Vfwd(V)
        Ifwd(A)                                                             %Error
                        Measurement                Simulation
              0.01                0.598                  0.602187               0.700
              0.02                0.634                  0.627996              -0.947
              0.05                0.662                  0.662797               0.120
               0.1                0.690                  0.690066               0.010
               0.2                0.718                  0.719109               0.154
               0.5                0.764                  0.763462              -0.070
                 1                0.806                  0.806715               0.089
                 2                0.868                  0.867726              -0.032




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Forward Current Characteristic                                           Reference




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Recovery Characteristic

Circuit Simulation Result

                10A




                 0A




               -10A
                 10.0us             10.1us         10.2us              10.3us          10.4us    10.5us
                      I(R1)
                                                            Time




Evaluation Circuit

                                               R1
                                     1
                                               10


                                                                                U1
                                                                                D02N60C3_SP

                      V1 = -420
                      V2 = 90            V1

                      TD = 0
                      TR = 20n
                      TF = {20*X}
                      PW = 1u
                      PER = 10u                                    0            PARAMETERS:
                                                                                X = 25.5n


                                         0


Compare Measurement vs. Simulation
             Measurement                                    Simulation                                Error(%)
    trr                             200       ns                          200.27            ns             0.135




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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SPICE MODEL of SPD02N60C3 (Professional+BDSP Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: SPD02N60C3 MANUFACTURER: Infineon technologies REMARK: Body Diode (Special) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 4. Transconductance Characteristic Circuit Simulation Result Comparison table gfs (S) ID(A) Error (%) Measurement Simulation 0.2 0.675 0.685 1.48 0.5 1.1 1.08 -1.82 1 1.53 1.52 -0.65 2 2.1 2.1275 1.31 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 5. Vgs-Id Characteristic Circuit Simulation result 2.0A 1.0A 0A 0V 5V 10V I(V2) V_V1 Evaluation circuit V2 0V dc U1 V3 V1SP D0 2N6 0C3P_ DS P 10 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.2 3.945 3.9604 0.39 0.5 4.295 4.3003 0.123 1 4.675 4.6851 0.216 2 5.24 5.2322 -0.149 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 7. Id-Rds(on) Characteristic Circuit Simulation result 2.0A 1.0A 0A 0V 2.5V 5.0V I(V2) V_V3 Evaluation circuit V2 0Vdc U1 V3 V1SPD02N60C3P_DSP 10Vdc 10.0Vdc 0 Simulation Result ID=1.1, VGS=10V Measurement Simulation Error (%) R DS (on) 2.291  2.2911  0.004 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 8. Id-Rds(on) Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 9. Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 2n 4n 6n 8n 10n 12n 14n V(W1:3) Time*10ms Evaluation circuit V2 0V dc Db reak PE R = 10 00 u D1 PW = 6 00 u U2 I2 TF = 10 n W1 SP D0 2N6 0C3P_ DS P 1.8 Adc TR = 10n + TD = 0 I2 = 1 0m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0 uA 52 0V dc 0 Simulation Result VDD=520V,ID=1.8A Measurement Simulation Error (%) Qgs 1.6 nC 1.6095 nC 0.59 Qgd 4.4 nC 4.3959 nC -0.09 Qg 9.5 nC 96.45 nC 1.53 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 10. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0 354 354.15 0.042373 10 200 199.77 -0.115 25 86 85.5 -0.581395 50 21 21.4 1.904762 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 11. Switching Time Characteristic Circuit Simulation result 12V VDS =380 (V) VGS = 10V 8V 4V 0V 5.00us 5.05us 5.10us 5.15us V(2) V(3)/35 Time Evaluation circuit L1 RL 3 V3 0.05uH 192 0Vdc VDD 350 L2 RG 2 0.03uH 50 U2 V1 = 0 SPD02N60C3P_DSP 0 V1 V2 = 10 TD = 5u TR = 6n TF = 7n PW = 10u PER = 100u 0 0 Simulation Result ID=1.8A, VDD=350V Measurement Simulation Error(%) VGS=0/10V td (on) 6.000 ns 6.089 ns 1.483 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 12. Output Characteristic Circuit Simulation result 2.0A 7.0V 6.0V 5.0V 1.0A 4.5V VGS=4.0V 0A 0V 10V 20V I(V2) V_V3 Evaluation circuit V2 0V dc U1 V3 V1SP D0 2N6 0C3P_ DS P 10 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 13. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 14. Forward Current Characteristic of Reverse Diode Circuit Simulation Result 2.0A 1.0A 0A 0V 1.0V 2.0V I(V2) V_V3 Evaluation Circuit R1 0.0 1m V2 U1 SP D0 2N6 0C3P_ DS P 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 15. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.01 0.598 0.602187 0.700 0.02 0.634 0.627996 -0.947 0.05 0.662 0.662797 0.120 0.1 0.690 0.690066 0.010 0.2 0.718 0.719109 0.154 0.5 0.764 0.763462 -0.070 1 0.806 0.806715 0.089 2 0.868 0.867726 -0.032 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 16. Forward Current Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 17. Reverse Recovery Characteristic Circuit Simulation Result 10A 0A -10A 10.0us 10.1us 10.2us 10.3us 10.4us 10.5us I(R1) Time Evaluation Circuit R1 1 10 U1 D02N60C3_SP V1 = -420 V2 = 90 V1 TD = 0 TR = 20n TF = {20*X} PW = 1u PER = 10u 0 PARAMETERS: X = 25.5n 0 Compare Measurement vs. Simulation Measurement Simulation Error(%) trr 200 ns 200.27 ns 0.135 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005