SPICE MODEL of SCS220AE2 (Professional Model) in SPICE PARK
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SPICE MODEL of SCS220AE2 (Professional Model) in SPICE PARK

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SPICE MODEL of SCS220AE2 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS220AE2 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SCS220AE2 (Professional Model) in SPICE PARK Document Transcript

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS220AE2 MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 R2 100MEG U1 SCS220AE2_P NC V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.700 0.691 -1.29 0.01 0.760 0.751 -1.18 0.1 0.830 0.815 -1.81 1 0.930 0.921 -0.97 2 1.000 0.990 -1.00 5 1.140 1.166 2.28 10 1.400 1.439 2.79 20 1.900 1.966 3.47 30 2.500 2.487 -0.52
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 650 V2 0Vdc R1 100MEG U1 SCS220AE2_P NC V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10us) 1.0p 10p 100p 1.0n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) CT (pF) %Error Measurement Simulation 0.01 500.0 490.8 -1.85 0.1 480.0 475.0 -1.04 1 370.0 367.9 -0.57 10 155.0 148.3 -4.32 20 110.0 105.2 -4.36 50 73.0 69.7 -4.52 100 53.0 54.3 2.45 200 43.0 44.9 4.42 500 38.0 38.0 0.00
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 R2 10MEG U1 SCS220AE2_P NC V_V1 0V 100V 200V 300V 400V 500V 600V I(R1) 10nA 100nA 1.0uA 10uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.01 420.00 410.90 -2.17 0.1 500.00 500.00 0.00 1.5 600.00 600.90 0.15