All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Si...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
p...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R1
0.01m
V1
0Vdc
0
R2
1MEG
U1
SCS220AE_P
V_V1
0V 0.5V 1.0V ...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 1...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph
Circuit Simulation result
Comparison table...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
V1
0Vdc
R1
100m
0
R2
100MEG
U1
SCS220AE_P
V_V1
0V 100V 200V...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph
Circuit Simulation result
Comparison table...
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SPICE MODEL of SCS220AE (Professional Model) in SPICE PARK

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SPICE MODEL of SCS220AE (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SCS220AE (Professional Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS220AE MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  2. 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  3. 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 R2 1MEG U1 SCS220AE_P V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  4. 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.700 0.684 -2.29 0.01 0.750 0.744 -0.80 0.1 0.804 0.806 0.25 1 0.890 0.884 -0.67 2 0.930 0.922 -0.86 5 1.000 1.000 0.00 10 1.120 1.127 0.62 20 1.330 1.350 1.50 50 2.000 1.980 -1.00 70 2.500 2.400 -4.00
  5. 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 650 V2 0Vdc R1 100MEG U1 SCS220AE_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10us) 10p 100p 1.0n 10n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  6. 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) CT (pF) %Error Measurement Simulation 0.01 1000.0 1003.0 0.30 0.1 980.0 961.0 -1.94 1 720.0 713.1 -0.96 10 305.0 299.0 -1.97 20 220.0 219.2 -0.36 50 150.0 148.1 -1.27 100 110.0 113.3 3.00 200 86.0 89.4 3.95 500 72.0 69.3 -3.75
  7. 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 R2 100MEG U1 SCS220AE_P V_V1 0V 100V 200V 300V 400V 500V 600V I(R1) 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  8. 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.01 391.00 388.40 -0.66 0.1 480.00 477.50 -0.52 3 600.00 600.50 0.08

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