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SPICE MODEL of SCS220AE (Professional Model) in SPICE PARK
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SPICE MODEL of SCS220AE (Professional Model) in SPICE PARK

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SPICE MODEL of SCS220AE (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS220AE (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS220AE MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 R2 1MEG U1 SCS220AE_P V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.700 0.684 -2.29 0.01 0.750 0.744 -0.80 0.1 0.804 0.806 0.25 1 0.890 0.884 -0.67 2 0.930 0.922 -0.86 5 1.000 1.000 0.00 10 1.120 1.127 0.62 20 1.330 1.350 1.50 50 2.000 1.980 -1.00 70 2.500 2.400 -4.00
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 650 V2 0Vdc R1 100MEG U1 SCS220AE_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10us) 10p 100p 1.0n 10n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) CT (pF) %Error Measurement Simulation 0.01 1000.0 1003.0 0.30 0.1 980.0 961.0 -1.94 1 720.0 713.1 -0.96 10 305.0 299.0 -1.97 20 220.0 219.2 -0.36 50 150.0 148.1 -1.27 100 110.0 113.3 3.00 200 86.0 89.4 3.95 500 72.0 69.3 -3.75
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 R2 100MEG U1 SCS220AE_P V_V1 0V 100V 200V 300V 400V 500V 600V I(R1) 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.01 391.00 388.40 -0.66 0.1 480.00 477.50 -0.52 3 600.00 600.50 0.08