SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK
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SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK

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SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK Document Transcript

  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS215KG MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 R2 1MEG U1 SCS215KG_P V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.740 0.735 -0.68 0.01 0.780 0.794 1.79 0.1 0.850 0.857 0.82 1 0.950 0.942 -0.84 2 1.000 0.988 -1.20 5 1.100 1.096 -0.36 10 1.250 1.254 0.32 20 1.550 1.551 0.06 50 2.400 2.400 0.00
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 100us V2 = 1200 V2 0Vdc U1 SCS215KG_PR1 100MEG V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/100us) 10p 100p 1.0n 10n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) CT (pF) %Error Measurement Simulation 0.01 1100.000 1079.000 -1.91 0.1 1050.000 1045.000 -0.48 1 800.00 794.00 -0.75 10 330.00 325.00 -1.52 20 238.00 232.00 -2.52 50 155.00 151.00 -2.58 100 110.00 114.00 3.64 200 87.00 90.30 3.79 500 69.00 71.20 3.19 1000 63.00 62.75 -0.40
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 R2 100MEG U1 SCS215KG_P V_V1 0V 0.50KV 1.00KV 1.24KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA 1.0mA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.05 750.0 779.1 3.88 0.1 850.0 842.5 -0.88 0.2 920.0 904.3 -1.71 0.5 1005.0 985.0 -1.99 1 1060.0 1045.0 -1.42 2 1120.0 1106.0 -1.25 5 1170.0 1185.0 1.28 9 1200.0 1237.0 3.08