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SPICE MODEL of SCS215AJ (Professional Model) in SPICE PARK
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SPICE MODEL of SCS215AJ (Professional Model) in SPICE PARK

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SPICE MODEL of SCS215AJ (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS215AJ (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS215AJ MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 4 1 3 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 R2 1MEG U1 SCS215AJ_P V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.700 0.696 -0.57 0.01 0.760 0.756 -0.53 0.1 0.820 0.818 -0.24 1 0.900 0.902 0.22 2 0.940 0.948 0.85 5 1.060 1.054 -0.57 10 1.200 1.208 0.67 20 1.500 1.493 -0.47 50 2.300 2.300 0.00
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 650 V2 0Vdc R1 1MEG U1 SCS215AJ_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10us) 10p 100p 1.0n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) CT (pF) %Error Measurement Simulation 0.01 780.000 776.700 -0.42 0.1 730.000 736.700 0.92 1 550.000 547.100 -0.53 10 230.000 221.000 -3.91 20 165.000 159.700 -3.21 50 111.000 107.300 -3.33 100 85.000 83.100 -2.24 200 66.000 67.500 2.27 600 54.000 53.400 -1.11
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 R2 1MEG U1 SCS215AJ_P V_V1 0V 200V 400V 600V I(R1) 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.01 406.0 397.1 -2.19 0.1 486.0 487.3 0.27 2.1 600.0 598.8 -0.20