SPICE MODEL of SCS212AM (Professional Model) in SPICE PARK
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SPICE MODEL of SCS212AM (Professional Model) in SPICE PARK

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SPICE MODEL of SCS212AM (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS212AM (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SCS212AM (Professional Model) in SPICE PARK SPICE MODEL of SCS212AM (Professional Model) in SPICE PARK Document Transcript

  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS212AM MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 U1 SCS212AM_P V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.700 0.697 -0.43 0.01 0.760 0.756 -0.53 0.1 0.830 0.820 -1.20 1 0.910 0.913 0.33 2 0.970 0.970 0.00 5 1.100 1.100 0.00 10 1.300 1.314 1.11 20 1.720 1.711 -0.52 38 2.500 2.410 -3.60
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 650 V2 0Vdc U1 SCS212AM_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10us) 10p 100p 1.0n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) CT (pF) %Error Measurement Simulation 0.01 600.000 594.100 -0.98 0.1 580.000 572.000 -1.38 1 430.000 427.800 -0.51 10 170.000 164.700 -3.12 100 65.000 63.600 -2.15 200 52.000 53.900 3.65 500 47.000 46.900 -0.21
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 U1 SCS212AM_P V_V1 0V 200V 400V 600V I(R1) 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.01 410.0 398.4 -2.83 0.1 493.0 491.1 -0.39 1.7 600.0 597.5 -0.42