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SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK
SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK
SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK
SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK
SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK
SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK
SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK
SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK
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SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK

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SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS210KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS210KG MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 U1 SCS210KG_P R2 1MEG V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.730 0.731 0.14 0.01 0.800 0.791 -1.13 0.1 0.870 0.855 -1.72 1 0.970 0.956 -1.44 2 1.040 1.020 -1.88 5 1.200 1.183 -1.46 10 1.410 1.431 1.49 20 1.880 1.910 1.60 30 2.500 2.381 -4.76
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 1200 V2 0Vdc U1 SCS210KG_P R1 1MEG V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/10us) 1.0p 10p 100p 1.0n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) CT (pF) %Error Measurement Simulation 0.01 680.000 650.400 -4.35 0.1 675.000 679.800 0.71 1 515.000 513.600 -0.27 2 422.000 425.500 0.83 5 305.000 309.100 1.34 10 230.000 234.300 1.87 20 175.000 174.200 -0.46 50 114.000 116.700 2.37 100 84.000 86.000 2.38 200 62.000 63.700 2.74 500 44.00 43.23 -1.75
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 U1 SCS210KG_P R2 1MEG V_V1 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV 1.4KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.1 900.0 899.3 -0.08 1 1088.0 1083.0 -0.46 4.5 1200.0 1203.0 0.25

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