SPICE MODEL of SCS205KG  (Professional Model) in SPICE PARK
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SPICE MODEL of SCS205KG (Professional Model) in SPICE PARK

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SPICE MODEL of SCS205KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS205KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SCS205KG  (Professional Model) in SPICE PARK SPICE MODEL of SCS205KG (Professional Model) in SPICE PARK Document Transcript

  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS205KG MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0 R2 100MEG U1 SCS205KG_S V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.840 0.823 -2.02 0.01 0.890 0.886 -0.45 0.1 0.950 0.951 0.11 1 1.080 1.070 -0.93 2 1.140 1.154 1.20 5 1.370 1.373 0.22 10 1.700 1.718 1.06 20 2.400 2.389 -0.46
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 1200 V2 0Vdc U1 SCS205KG_P R1 100MEG V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/10us) 1.0p 10p 100p 1.0n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 370.000 368.000 -0.54 0.1 360.000 363.500 0.97 1 270.000 276.000 2.22 10 120.000 119.200 -0.67 20 85.000 87.000 2.35 50 57.000 56.600 -0.70 100 40.000 40.500 1.25 200 28.00 29.00 3.57
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 U1 SCS205KG_P R2 100MEG V1 0Vdc R1 100m 0 V_V1 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.002 370 360.06 -2.69 0.005 570 592.00 3.86 0.01 670 685.80 2.36 0.02 780 763.30 -2.14 0.05 875 856.10 -2.16 0.1 950 923.20 -2.82 0.2 1010 989.00 -2.08 0.5 1080 1,075.00 -0.46 1 1130 1,140.00 0.88