SPICE MODEL of SCS120KG (Professional Model) in SPICE PARK
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SPICE MODEL of SCS120KG (Professional Model) in SPICE PARK

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SPICE MODEL of SCS120KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS120KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SCS120KG (Professional Model) in SPICE PARK SPICE MODEL of SCS120KG (Professional Model) in SPICE PARK Document Transcript

  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS120KG MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R2 100MEG U1 SCS120KG_P R1 0.01m V1 0Vdc 0 V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.780 0.770 -1.28 0.01 0.840 0.830 -1.19 0.1 0.900 0.891 -1.00 1 0.985 0.974 -1.12 2 1.030 1.017 -1.26 5 1.120 1.116 -0.36 10 1.250 1.260 0.80 20 1.500 1.529 1.93 40 2.010 2.050 1.99 55 2.500 2.436 -2.56
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 100us V2 = 1200 V2 0Vdc R1 100MEG U1 SCS120KG_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/100us) 10p 100p 1.0n 10n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 1800.0 1834.0 1.89 0.1 1750.0 1741.0 -0.51 1 1250.0 1268.0 1.44 10 575.0 560.1 -2.59 100 202.0 207.3 2.62 200 150.0 152.7 1.80
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 R2 100MEG U1 SCS120KG_P V_V1 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.01 700 692.2 -1.11 0.1 878 871.9 -0.69 1 1030 1035 0.49 10 1200 1198 -0.17