SPICE MODEL of SCS120KG (Professional Model) in SPICE PARK

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SPICE MODEL of SCS120KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SCS120KG (Professional Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS120KG MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  2. 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  3. 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R2 100MEG U1 SCS120KG_P R1 0.01m V1 0Vdc 0 V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  4. 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.780 0.770 -1.28 0.01 0.840 0.830 -1.19 0.1 0.900 0.891 -1.00 1 0.985 0.974 -1.12 2 1.030 1.017 -1.26 5 1.120 1.116 -0.36 10 1.250 1.260 0.80 20 1.500 1.529 1.93 40 2.010 2.050 1.99 55 2.500 2.436 -2.56
  5. 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 100us V2 = 1200 V2 0Vdc R1 100MEG U1 SCS120KG_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/100us) 10p 100p 1.0n 10n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  6. 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 1800.0 1834.0 1.89 0.1 1750.0 1741.0 -0.51 1 1250.0 1268.0 1.44 10 575.0 560.1 -2.59 100 202.0 207.3 2.62 200 150.0 152.7 1.80
  7. 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 R2 100MEG U1 SCS120KG_P V_V1 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  8. 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.01 700 692.2 -1.11 0.1 878 871.9 -0.69 1 1030 1035 0.49 10 1200 1198 -0.17

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