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SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Professional Model) in SPICE PARK
 

SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Professional Model) in SPICE PARK

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SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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    SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Professional Model) in SPICE PARK SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Professional Model) in SPICE PARK Document Transcript

    • Device Modeling ReportCOMPONENTS: Silicon Carbide Schottky DiodePART NUMBER: SCS110AG_-25cMANUFACTURER: ROHMREMARK: Professional ModelREPORT:(LTspice IV) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
    • Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
    • Forward Current CharacteristicCircuit Simulation ResultEvaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
    • Comparison GraphCircuit Simulation Result 100.000 Measurement Simulation 10.000 FORWARD CURRENT: IF(A) 1.000 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 FORWARD VOLTAGE: VF(V)Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.001 0.9500 0.9471 -0.30 0.01 1.0100 1.0070 -0.30 0.1 1.0700 1.0695 -0.05 0.2 1.0900 1.0908 0.07 0.5 1.1250 1.1244 -0.05 1 1.1600 1.1589 -0.09 2 1.2050 1.2100 0.41 5 1.3300 1.3332 0.24 10 1.5100 1.5170 0.46 15 1.7000 1.6933 -0.39 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
    • Junction Capacitance CharacteristicCircuit Simulation ResultEvaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
    • Comparison GraphCircuit Simulation Result 1000 Measurement CAPACITANCE BETWEEN TERMINAL: Ct(pF) Simulation 100 10 1 0.1 1 10 100 REVERSE VOLTAGE:VR(V)Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 0.1 495.522 500.945 1.09 0.2 478.484 484.972 1.36 0.5 432.707 437.279 1.06 1 381.755 382.943 0.31 2 315.733 317.098 0.43 5 227.287 228.635 0.59 10 170.646 171.457 0.48 20 125.176 125.891 0.57 50 82.750 82.216 -0.65 100 60.545 59.210 -2.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
    • Reverse Recovery CharacteristicCircuit Simulation Result Time (s)Evaluation CircuitCompare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 7.500 7.468 -0.42 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
    • Reverse Recovery Characteristic Reference MeasurementTrj =7.5(ns)Trb=16.0(ns)Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
    • Reverse CharacteristicCircuit Simulation ResultEvaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
    • Comparison GraphCircuit Simulation Result 100000 Measurement Simulation 10000 REVERSE CURRENT:IR(nA ) 1000 100 10 1 0 100 200 300 400 500 600 REVERSE VOLTAGE:VR(V)Simulation Result IR(nA) VR(V) Error (%) Measurement Simulation 20 2.1000 2.0962 -0.18 100 2.3000 2.2804 -0.85 200 2.6590 2.6677 0.33 300 4.3000 4.2257 -1.73 400 14.0000 14.3290 2.35 500 83.0000 86.7290 4.49 600 640.0000 613.3040 -4.17 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010