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SPICE MODEL of SCS110AM (Professional Model) in SPICE PARK
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SPICE MODEL of SCS110AM (Professional Model) in SPICE PARK

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SPICE MODEL of SCS110AM (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS110AM (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS110AM MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 SCS110AM_P R1 0.01m V1 0Vdc 0 V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.01 0.940 0.941 0.11 0.1 1.010 1.000 -0.99 1 1.107 1.097 -0.90 2 1.170 1.152 -1.54 5 1.300 1.289 -0.86 10 1.480 1.493 0.88 20 1.850 1.886 1.95 35 2.500 2.461 -1.56
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 600 V2 0Vdc U1 SCS110AM_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/10us) 10pF 100pF 1.0nF Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 588.1 573.7 -2.45 0.1 560.2 557.2 -0.53 1 440.6 437.8 -0.63 10 185.0 180.4 -2.49 100 68.5 66.7 -2.63 200 53.0 55.6 4.91 500 48.0 47.7 -0.62
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 U1 SCS110AM_P V_V1 0V 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.02 385.0 397.5 3.25 0.05 438.0 438.4 0.09 0.1 470.0 468.3 -0.36 0.2 500.0 497.8 -0.44 0.5 538.0 536.6 -0.26 1 565.0 565.8 0.14 2.3 600.0 600.0 0.00