SPICE MODEL of SCS110AM (Professional Model) in SPICE PARK

198 views
170 views

Published on

SPICE MODEL of SCS110AM (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Published in: Technology, Education
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
198
On SlideShare
0
From Embeds
0
Number of Embeds
27
Actions
Shares
0
Downloads
1
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of SCS110AM (Professional Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS110AM MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  2. 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  3. 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 SCS110AM_P R1 0.01m V1 0Vdc 0 V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  4. 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.01 0.940 0.941 0.11 0.1 1.010 1.000 -0.99 1 1.107 1.097 -0.90 2 1.170 1.152 -1.54 5 1.300 1.289 -0.86 10 1.480 1.493 0.88 20 1.850 1.886 1.95 35 2.500 2.461 -1.56
  5. 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 600 V2 0Vdc U1 SCS110AM_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/10us) 10pF 100pF 1.0nF Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  6. 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 588.1 573.7 -2.45 0.1 560.2 557.2 -0.53 1 440.6 437.8 -0.63 10 185.0 180.4 -2.49 100 68.5 66.7 -2.63 200 53.0 55.6 4.91 500 48.0 47.7 -0.62
  7. 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 U1 SCS110AM_P V_V1 0V 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  8. 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.02 385.0 397.5 3.25 0.05 438.0 438.4 0.09 0.1 470.0 468.3 -0.36 0.2 500.0 497.8 -0.44 0.5 538.0 536.6 -0.26 1 565.0 565.8 0.14 2.3 600.0 600.0 0.00

×