SPICE MODEL of SCS105KG (Professional Model) in SPICE PARK

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SPICE MODEL of SCS105KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SCS105KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS105KG MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 R2 100MEG U1 SCS105KG_P V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.840 0.826 -1.67 0.01 0.900 0.887 -1.44 0.1 0.968 0.955 -1.34 1 1.100 1.100 0.00 2 1.200 1.210 0.83 5 1.490 1.514 1.61 10 2.000 2.000 0.00 15 2.500 2.477 -0.92
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 100us V2 = 1200 V2 0Vdc R1 100MEG U1 SCS105KG_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/100us) 1.0p 10p 100p 1.0n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 450.0 435.9 -3.13 0.1 430.0 425.6 -1.02 1 320.0 321.8 0.56 10 140.0 133.1 -4.93 100 50.0 48.7 -2.60 200 37.1 38.6 4.04
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 R2 100MEG U1 SCS105KG_P V1 0Vdc R1 100m 0 V_V1 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV I(R1) 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.01 699 689.7 -1.33 0.1 875 869.2 -0.66 1 1030 1033 0.29 10 1200 1196 -0.33