SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK

228 views
196 views

Published on

SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Published in: Technology
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
228
On SlideShare
0
From Embeds
0
Number of Embeds
0
Actions
Shares
0
Downloads
1
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS:DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONALPART NUMBER: RURD660SMANUFACTURER: FAIRCHILDREMARK: TC=80 degree Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  2. 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  3. 3. Forward Current Characteristic Reference All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  4. 4. Forward Current CharacteristicCircuit Simulation Result 5.0A 1.0A 100mA 10mA 0.1V 1.0V 2.0V I(X_U1.D_D1) V_V1Evaluation Circuit R1 0.01m U1 V1 0Vdc RURD660S_80p 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  5. 5. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.01 0.448 0.444 0.893 0.02 0.492 0.497 -1.016 0.05 0.570 0.568 0.351 0.1 0.620 0.623 -0.484 0.2 0.684 0.680 0.585 0.5 0.766 0.765 0.131 1 0.840 0.841 -0.119 2 0.934 0.933 0.107 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  6. 6. Capacitance CharacteristicCircuit Simulation Result 1.0n 100p 10p 1.0p 10mV 100mV 1.0V 10V 100V -I(X_U1.D_D1)/(600V/1u) V(N00037)Evaluation Circuit V2 0Vdc V2 = 600 V1 V1 = 0 U1 TD = 0 TR = 1u TF = 10ns RURD660S_80p PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  7. 7. Comparison GraphCircuit Simulation ResultSimulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0 120.800 120.800 0.000 0.5 77.800 78.159 -0.461 1 62.800 63.576 -1.236 2 50.000 50.173 -0.346 5 35.000 35.500 -1.429 10 27.000 27.200 -0.741 20 20.800 20.893 -0.447 50 14.500 14.454 0.317 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  8. 8. Reverse Recovery CharacteristicCircuit Simulation Result 200mA 100mA -0mA -100mA -200mA 19.92us 20.00us 20.08us 20.16us 20.24us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.39V V1 V2 = 10.71V D1 TD = 0 TR = 10ns TF = 10ns RURD660S_80s PW = 20us PER = 50us 0Compare Measurement vs. Simulation Measurement Simulation %Error trj 28.8 ns 28.90 ns 0.347 trb 84.0 ns 84.07 ns 0.083 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  9. 9. Reverse Recovery Characteristic Reference MeasurementTrj =28.8 (ns)Trb= 84.0(ns)Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

×