SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK
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SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK

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SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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    SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK Document Transcript

    • Device Modeling ReportCOMPONENTS:DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONALPART NUMBER: RURD660SMANUFACTURER: FAIRCHILDREMARK: TC=80 degree Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
    • PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
    • Forward Current Characteristic Reference All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
    • Forward Current CharacteristicCircuit Simulation Result 5.0A 1.0A 100mA 10mA 0.1V 1.0V 2.0V I(X_U1.D_D1) V_V1Evaluation Circuit R1 0.01m U1 V1 0Vdc RURD660S_80p 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
    • Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.01 0.448 0.444 0.893 0.02 0.492 0.497 -1.016 0.05 0.570 0.568 0.351 0.1 0.620 0.623 -0.484 0.2 0.684 0.680 0.585 0.5 0.766 0.765 0.131 1 0.840 0.841 -0.119 2 0.934 0.933 0.107 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
    • Capacitance CharacteristicCircuit Simulation Result 1.0n 100p 10p 1.0p 10mV 100mV 1.0V 10V 100V -I(X_U1.D_D1)/(600V/1u) V(N00037)Evaluation Circuit V2 0Vdc V2 = 600 V1 V1 = 0 U1 TD = 0 TR = 1u TF = 10ns RURD660S_80p PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
    • Comparison GraphCircuit Simulation ResultSimulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0 120.800 120.800 0.000 0.5 77.800 78.159 -0.461 1 62.800 63.576 -1.236 2 50.000 50.173 -0.346 5 35.000 35.500 -1.429 10 27.000 27.200 -0.741 20 20.800 20.893 -0.447 50 14.500 14.454 0.317 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
    • Reverse Recovery CharacteristicCircuit Simulation Result 200mA 100mA -0mA -100mA -200mA 19.92us 20.00us 20.08us 20.16us 20.24us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.39V V1 V2 = 10.71V D1 TD = 0 TR = 10ns TF = 10ns RURD660S_80s PW = 20us PER = 50us 0Compare Measurement vs. Simulation Measurement Simulation %Error trj 28.8 ns 28.90 ns 0.347 trb 84.0 ns 84.07 ns 0.083 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
    • Reverse Recovery Characteristic Reference MeasurementTrj =28.8 (ns)Trb= 84.0(ns)Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2005