Device Modeling ReportCOMPONENTS: PHOTOCOUPLERPART NUMBER: PS2501-2MANUFACTURER: NEC              Bee Technologies Inc.All...
DIODE MODEL  Pspice model                                          Model description   Parameter        IS         Saturat...
VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)E<Name><(+)Node><(-)Node>VALUE={Expression}CURRENT CONTROLLED MODEL(W)  Pspic...
Input Device Forward Current Characteristics                               Measurement                               Simul...
Input Device Reverse Recovery Characteristics                                                   Measurementtrj=102n(s)trb=...
LED IV Curve CharacteristicsEvaluation Circuit                                            U1                              ...
Comparison Table                                       Vfwd(V)     Ifwd(mA)                                               ...
LED IV Curve Characteristics                                               Reference            All Rights Reserved Copyri...
Transistor Saturation CharacteristicsEvaluation Circuit                                        U1                         ...
CTR(Current Transfer Ratio) CharacteristicsEvaluation Circuit                         V2               U1               V3...
Comparison Table                                        CTR(%)      If(mA)                                                ...
Switching Time CharacteristicsEvaluation Circuit                                             U1                           ...
Switching Time Characteristics                                              Referencetr=3.4(us)tf=17(us)ts=20(us)Condition...
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SPICE MODEL of PS2501-2 in SPICE PARK

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SPICE MODEL of PS2501-2 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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Transcript of "SPICE MODEL of PS2501-2 in SPICE PARK"

  1. 1. Device Modeling ReportCOMPONENTS: PHOTOCOUPLERPART NUMBER: PS2501-2MANUFACTURER: NEC Bee Technologies Inc.All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit TimeBIPOLAR JUNCTION TRANSISTOR MODEL Pspice model Model description parameter NR Reverse Emission Coefficient RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance CJC Zero-bias Collector-Base Junction Capacitance TF Forward Transit Time TR Reverse Transit TimeVOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)E<Name><(+)Node><(-)Node>VALUE={Expression}E<Name><(+)Node><(-)Node>TABLE={Expression} All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)E<Name><(+)Node><(-)Node>VALUE={Expression}CURRENT CONTROLLED MODEL(W) Pspice model Model description parameter IOFF Controlling current to Off state ION Controlling current to On state ROFF Off Resistance RON On Resistance All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Input Device Forward Current Characteristics Measurement SimulationInput Device Junction Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Input Device Reverse Recovery Characteristics Measurementtrj=102n(s)trb=32n(s)Conditions:Ifwd=Irev=0.04(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. LED IV Curve CharacteristicsEvaluation Circuit U1 1 8 V3 2 7 0Vdc 3 6 4 5 V2 V1 0Vdc 5Vdc PS2501-2 0 0Simulation result Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Comparison Table Vfwd(V) Ifwd(mA) % Error Measurement Simulation 0.05 0.924 0.927 0.325 0.10 0.956 0.958 0.209 0.20 0.990 0.988 -0.202 0.50 1.032 1.029 -0.291 1.00 1.062 1.060 -0.188 2.00 1.094 1.092 -0.183 5.00 1.134 1.135 0.088 10.00 1.166 1.169 0.257 20.00 1.206 1.208 0.166 50.00 1.274 1.273 -0.078 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. LED IV Curve Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Transistor Saturation CharacteristicsEvaluation Circuit U1 1 8 2 7 3 6 4 5 IF IC 10mAdc PS2501-2 2mAdc 0 0Simulation result SimulationComparison Table Measurement Simulation % Error Vce(sat) (V) 0.3 0.299 -0.333 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. CTR(Current Transfer Ratio) CharacteristicsEvaluation Circuit V2 U1 V3 1 8 0Vdc 2 7 0Vdc 3 6 4 5 VCE IF 5Vdc 5mAdc PS2501-2 0 0Simulation result Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Comparison Table CTR(%) If(mA) % Error Measurement Simulation 0.1 27.0 26.467 -1.974 0.2 59.0 60.415 2.398 0.5 98.2 103.219 5.111 1.0 129.0 134.764 4.468 2.0 158.0 165.336 4.643 5.0 207.0 206.938 -0.030 10.0 205.0 200.280 -2.302 20.0 150.0 148.833 -0.778 50.0 80.0 80.794 0.992 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Switching Time CharacteristicsEvaluation Circuit U1 1 8 2 7 PER = 1000u PW = 100u 3 6 TF = 10n TR = 10n 4 5 TD = 0 VCE I2 = 5m R2 5Vdc I1 = 0 IF PS2501-2 R1 50 1K 0 0Simulation result SimulationComparison Table IF=5mA, Vcc=5V,RL=1K Measurement Simulation % Error tr(us) 3.4 3.405 0.147 tf (us) 17.0 16.277 -4.253 ts (us) 20.0 19.954 -0.230 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Switching Time Characteristics Referencetr=3.4(us)tf=17(us)ts=20(us)Conditions:IF=5mA,Vcc=5V All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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