Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: MP4212MANUFACTURER: TOSHIBABody Diode (Model ...
MOSFET MODELPspice model                                      Model description parameter  LEVEL      L        Channel Len...
P-Channel ModelTransconductance CharacteristicCircuit Simulation ResultComparison table                                   ...
Vgs-Id CharacteristicCircuit Simulation result        -10A         -8A         -6A         -4A         -2A          0A    ...
Comparison GraphCircuit Simulation ResultSimulation Result                                       VGS(V)       ID(A)       ...
Rds(on) CharacteristicCircuit Simulation result         -3.0A         -2.5A         -2.0A         -1.5A         -1.0A     ...
Gate Charge CharacteristicCircuit Simulation result      -20V      -15V      -10V       -5V        0V             0       ...
Capacitance Characteristic                                                              Measurement                       ...
Switching Time CharacteristicCircuit Simulation result         -15V         -10V          -5V            0V           1.91...
Output CharacteristicCircuit Simulation result         -10A                      -10.0V                      -8.0V      -6...
BODY DIODEForward Current CharacteristicCircuit Simulation Result           30A           10A          1.0A         100mA ...
Comparison GraphCircuit Simulation ResultSimulation Result                          VDS(V)                    VDS(V)      ...
Reverse Recovery CharacteristicCircuit Simulation Result          400mA          300mA          200mA          100mA      ...
Reverse Recovery Characteristic                                        ReferenceTrj=50(ns)Trb=76(ns)Conditions:Ifwd=lrev=0...
ESD PROTECTION DIODEZener Voltage CharacteristicCircuit Simulation Result         -10mA          -9mA          -8mA       ...
Zener Voltage Characteristic                                         Reference            All Rights Reserved Copyright (c...
N-Channel ModelTransconductance CharacteristicCircuit Simulation ResultComparison table                                   ...
Vgs-Id CharacteristicCircuit Simulation result        10A         8A         6A         4A         2A         0A          ...
Comparison GraphCircuit Simulation ResultSimulation Result                                       VGS(V)       ID(A)       ...
Rds(on) CharacteristicCircuit Simulation result          3.5A          3.0A          2.0A          1.0A            0A     ...
Gate Charge CharacteristicCircuit Simulation result         15V         10V          5V          0V               0       ...
Capacitance Characteristic                                                              Measurement                       ...
Switching Time CharacteristicCircuit Simulation result      12V       8V       4V       0V       1.95us                   ...
Output CharacteristicCircuit Simulation result         20A                10.0V                    8.0V         16A       ...
BODY DIODEForward Current CharacteristicCircuit Simulation Result           10A          1.0A         100mA               ...
Comparison GraphCircuit Simulation ResultSimulation Result                              VSD(V)                 VSD(V)     ...
Reverse Recovery CharacteristicCircuit Simulation Result       400mA       300mA       200mA       100mA        -0mA      ...
Reverse Recovery Characteristic                                       ReferenceTrj=22.4(ns)Trb=40.0(ns)Conditions:Ifwd=lre...
ESD PROTECTION DIODEZener Voltage CharacteristicCircuit Simulation Result         10mA          9mA          8mA          ...
Zener Voltage Characteristic                                         Reference            All Rights Reserved Copyright (c...
Upcoming SlideShare
Loading in …5
×

SPICE MODEL of MP4212 (Standard+BDS N&P Model) in SPICE PARK

530 views
468 views

Published on

SPICE MODEL of MP4212 (Standard+BDS N&P) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Published in: Technology
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
530
On SlideShare
0
From Embeds
0
Number of Embeds
79
Actions
Shares
0
Downloads
2
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of MP4212 (Standard+BDS N&P Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: MP4212MANUFACTURER: TOSHIBABody Diode (Model Parameter) / ESD Protection DiodeREMARK: N&P Channel Model Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  2. 2. MOSFET MODELPspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  3. 3. P-Channel ModelTransconductance CharacteristicCircuit Simulation ResultComparison table gfs Id(A) Error(%) Measurement Simulation -0.500 1.800 1.810 0.556 -1.000 2.500 2.505 0.200 -2.000 3.500 3.500 0.000 -5.000 5.500 5.505 0.091 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  4. 4. Vgs-Id CharacteristicCircuit Simulation result -10A -8A -6A -4A -2A 0A 0V -2V -4V -6V -8V -10V I(V3) V_V2Evaluation circuit U17 MP4212 Open Open V3 R1 V2 0Vdc 0Vdc 100MEG V1 -10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  5. 5. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation -1.000 -2.500 -2.511 0.440 -2.000 -2.850 -2.844 -0.211 -4.000 -3.300 -3.324 0.727 -6.000 -3.700 -3.695 -0.135 -8.000 -4.000 -4.004 0.100 -10.000 -4.300 -4.291 -0.209 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  6. 6. Rds(on) CharacteristicCircuit Simulation result -3.0A -2.5A -2.0A -1.5A -1.0A -0.5A 0A 0V -50mV -150mV -250mV -350mV -450mV I(V3) V_VDSEvaluation circuit U17 MP4212 Open Open VGS V3 -10Vdc R1 0Vdc 0Vdc VDS 100MEG 0 0Simulation Result ID=-2.5A, VGS=-10V Measurement Simulation Error (%) R DS (on) 400.000 m 400.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  7. 7. Gate Charge CharacteristicCircuit Simulation result -20V -15V -10V -5V 0V 0 8n 16n 24n 32n 40n V(W1:4) Time*1mSEvaluation circuit U17 MP4212 Open V2 0 ION = 0uA IOFF = 100uA 0Vdc W - I1 = 0 + D1 open I1 I2 = 1m W1 I2 TD = 0 Dbreak -5Adc TR = 10n R1 TF = 10n PW = 600u 100MEG PER = 1000u V1 -48Vdc 0 0Simulation Result VDD=-48V,ID=-5A Measurement Simulation Error (%) ,VGS=-10V Qgs 3.500 nC 3.545 nC 1.286 Qgd 10.000 nC 10.046 nC 0.460 Qg 22.000 nC 18.364 nC -16.527 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 475.000 471.000 -0.842 0.200 465.000 462.000 -0.645 0.500 440.000 438.000 -0.455 1.000 400.000 403.000 0.750 2.000 350.000 351.000 0.286 5.000 255.000 260.000 1.961 10.000 188.000 190.000 1.064 20.000 134.000 135.000 0.746 50.000 75.000 75.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  9. 9. Switching Time CharacteristicCircuit Simulation result -15V -10V -5V 0V 1.912us 2.000us 2.100us 2.152us V(R1:1) V(L2:2)/3 TimeEvaluation circuit U17 MP4212 Open 0 RG L1 L2 R2 30nH 50nH 12 open V1 = 0 4.7 V2 = -20 V2 TD = 2u R1 V1 R9 TR = 3n 4.7 -30Vdc TF = 4n 100MEG PW = 10u PER = 2000u 0 0Simulation Result ID=-2.5A, VDD=-30V Measurement Simulation Error(%) VGS=0/10V ton 45.000 ns 44.933 ns -0.149 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  10. 10. Output CharacteristicCircuit Simulation result -10A -10.0V -8.0V -6V -4.0V -8A -6A -3.5V -4A -3.0V -2A -2.5V VGS=-2.0V 0A 0V -2V -4V -6V -8V -10V I(Vdsense) V_VvariableEvaluation circuit U17 MP4212 Open Open 0Vdc Vstep R1 Vdsense -10Vdc Vv ariable 100MEG -10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  11. 11. BODY DIODEForward Current CharacteristicCircuit Simulation Result 30A 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1Evaluation Circuit U17 MP4212 Open Open R1 0.01m Ropen V1 100MEG 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  12. 12. Comparison GraphCircuit Simulation ResultSimulation Result VDS(V) VDS(V) IDR(A) Measurement Simulation %Error 0.100 0.630 0.632 0.317 0.200 0.670 0.668 -0.299 0.500 0.720 0.720 0.000 1.000 0.770 0.769 -0.130 2.000 0.830 0.834 0.482 5.000 0.980 0.997 1.735 10.000 1.180 1.177 -0.254 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us I(R1) TimeEvaluation Circuit U18 MP4212 Open Open R1 50 Ropen V1 = -9.4v V1 V2 = 10.6v 100MEG TD = 20.468n TR = 10ns TF = 10ns PW = 1us 0 PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 50.000 ns 49.878 ns -0.244 trb 76.000 ns 82.207 ns 8.167 trr 126.000 ns 132.085 ns 4.829 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  14. 14. Reverse Recovery Characteristic ReferenceTrj=50(ns)Trb=76(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  15. 15. ESD PROTECTION DIODEZener Voltage CharacteristicCircuit Simulation Result -10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA 0A 0V -5V -10V -15V -20V -25V -30V -35V -40V -45V I(R1) V_V1Evaluation Circuit U17 MP4212 Open open R1 0.01m Ropen V1 100MEG 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  17. 17. N-Channel ModelTransconductance CharacteristicCircuit Simulation ResultComparison table gfs Id(A) Error(%) Measurement Simulation 0.500 2.100 2.150 2.381 1.000 3.000 3.010 0.333 2.000 3.800 3.800 0.000 5.000 6.100 6.150 0.820 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  18. 18. Vgs-Id CharacteristicCircuit Simulation result 10A 8A 6A 4A 2A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V2Evaluation circuit U19 MP4212 Open Open V3 R1 V2 0Vdc 0Vdc V1 100MEG 10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  19. 19. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1.000 2.700 2.701 0.037 2.000 3.000 3.011 0.367 4.000 3.500 3.446 -1.543 6.000 3.800 3.790 -0.263 8.000 4.000 4.081 2.025 10.000 4.400 4.339 -1.386 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  20. 20. Rds(on) CharacteristicCircuit Simulation result 3.5A 3.0A 2.0A 1.0A 0A 0V 200mV 400mV 500mV I(V3) V_VDSEvaluation circuit U19 MP4212 Open Open V3 0Vdc R1 VGS 0Vdc VDS 100MEG 10Vdc 0 0Simulation Result ID=2.5A, VGS=10V Measurement Simulation Error (%) R DS (on) 300.000 m 300.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  21. 21. Gate Charge CharacteristicCircuit Simulation result 15V 10V 5V 0V 0 20n 40n 60n 80n V(W1:3) Time*1mSEvaluation circuit U19 MP4212 Open V2 0 0Vdc Dbreak open PER = 1000u W1 PW = 600u + TF = 10n D1 TR = 10n - I2 Ropen TD = 0 W 5Adc I2 = 1m IOFF = 100uA 100MEG I1 ION = 0uA I1 = 0 V1 0 48Vdc 0Simulation Result VDD=48V,ID=5A Measurement Simulation Error (%) ,VGS=10V Qgs 7.000 nC 7.009 nC 0.129 Qgd 16.000 nC 15.963 nC -0.231 Qg 45.000 nC 35.734 nC -20.591 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  22. 22. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 360.000 362.000 0.556 0.200 340.000 337.000 -0.882 0.500 285.000 288.000 1.053 1.000 240.000 243.000 1.250 2.000 200.000 198.000 -1.000 5.000 140.000 142.000 1.429 10.000 110.000 110.000 0.000 20.000 80.000 83.000 3.750 50.000 60.000 61.000 1.667 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  23. 23. Switching Time CharacteristicCircuit Simulation result 12V 8V 4V 0V 1.95us 2.00us 2.05us 2.10us V(L1:2) V(L2:2)/3 TimeEvaluation circuit U19 MP4212 Open L1 0 L2 R2 30nH 50nH 12 open V1 = 0 V2 = 10 V2 TD = 2u R1 V1 Ropen TR = 3n 50 30Vdc TF = 4n 100MEG PW = 10u PER = 2000u 0 0Simulation Result ID=2.5 A, VDD=30V Measurement Simulation Error(%) VGS=0/10V ton 25.000 ns 25.042 ns -0.168 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  24. 24. Output CharacteristicCircuit Simulation result 20A 10.0V 8.0V 16A 6.0V 12A 4.5V 4.0V 8A 3.5V 4A 3.0V VGS=2.5V 0A 0V 4V 8V 12V 16V 20V I(Vdsense) V_VvariableEvaluation circuit U19 MP4212 Open Open Vdsense 10Vdc 0Vdc R1 Vstep Vv ariable 100MEG 10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  25. 25. BODY DIODEForward Current CharacteristicCircuit Simulation Result 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V I(R1) V_V1Evaluation Circuit U19 MP4212 Open R1 open 0.01m V1 Ropen 0Vdc 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  26. 26. Comparison GraphCircuit Simulation ResultSimulation Result VSD(V) VSD(V) IDR(A) Measurement Simulation %Error 0.100 0.650 0.647 -0.462 0.200 0.680 0.682 0.294 0.500 0.730 0.736 0.822 1.000 0.800 0.789 -1.375 2.000 0.860 0.864 0.465 5.000 1.040 1.041 0.096 10.000 1.300 1.299 -0.077 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  27. 27. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.88us 0.96us 1.04us 1.12us 1.20us 1.28us I(R1) TimeEvaluation Circuit U19 MP4212 Open Open R1 50 V1 = -9.4v V1 Ropen V2 = 10.6v TD = 0 100MEG TR = 10ns TF = 10ns PW = 1us PER = 100us 0 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 22.400 ns 22.266 ns -0.598 trb 40.000 ns 82.273 ns 105.682 trr 62.000 ns 104.539 ns 67.530 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  28. 28. Reverse Recovery Characteristic ReferenceTrj=22.4(ns)Trb=40.0(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  29. 29. ESD PROTECTION DIODEZener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1Evaluation Circuit U19 MP4212 Open open R1 0.01m Ropen V1 0Vdc 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  30. 30. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

×