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Device Modeling Report




COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDB10S60C
MANUFACTURER: Infineon
REMARK: Professional Model




                Bee Technologies Inc.




   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                  1
Circuit Configuration


         U1
         IDB10S60C




             All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                            2
DIODE MODEL PARAMETERS
  PSpice
   model                                Model description
 parameter
     IS         Saturation Current
     N          Emission Coefficient
     RS         Series Resistance
    IKF         High-injection Knee Current
    CJO         Zero-bias Junction Capacitance
     M          Junction Grading Coefficient
     VJ         Junction Potential
    ISR         Recombination Current Saturation Value
     BV         Reverse Breakdown Voltage(a positive value)
    IBV         Reverse Breakdown Current(a positive value)
     TT         Transit Time
    EG          Energy-band Gap




             All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                            3
Forward Current Characteristics

Circuit Simulation result



             30A




             20A




             10A




              0A
                   0V               1.0V             2.0V             3.0V             4.0V
                        I(R1)
                                                     V_V1


Evaluation circuit


                                                R1

                                                0.01m

                                      V1                           U1
                                                                   IDB10S60C




                                     0




                        All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                              4
Comparison Graph

Circuit Simulation result




Comparison table


                                             VF (V)
               IF (A)                                                       %Error
                                Measurement           Simulation
                            1            1.000                 0.993              -0.70
                            2            1.053                 1.065              1.15
                            5            1.230                 1.239              0.72
                        10               1.500                 1.490              -0.64
                        20               1.975                 1.959              -0.82
                        30               2.435                 2.413              -0.90




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          5
Reverse Current Characteristic

Circuit Simulation result



             100uA




              10uA




             1.0uA




             100nA




              10nA




             1.0nA
                 100V        200V              300V          400V         500V      600V
                     I(U1:K)
                                                      V_V1


Evaluation circuit


                                          V2



                                          0
                                   V1                               U1
                                                                    IDB10S60C




                                   0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           6
Comparison Graph

Circuit Simulation result




Comparison table


                                       IR (A)
              VR (V)                                                        %Error
                             Measurement       Simulation
                       100             0.0020                0.0020               0.00
                       200             0.0055                0.0053               -3.64
                       400             0.1400                0.1430               2.14
                       600             5.5000                5.2381               -4.76




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          7
Junction Capacitance Characteristic

Circuit Simulation result


               600p



               500p



               400p



               300p



               200p



               100p



                      0
                     100mV           1.0V              10V            100V           1.0KV
                         I(V2)/(600V/1u)
                                                       V(R)


               600p

Evaluation circuit
               500p

                                                  V2
                                          R
               400p

                                                  0
               300p
                             V1 = 0       V1                       U1
                             V2 = 600                              IDB10S60C
                             TD = 0
               200p          TR = 1us
                             TF = 100ns
                             PW = 100us
                             PER = 10m
               100p

                                              0
                      0
                     100mV           1.0V              10V            100V           1.0KV
                         I(V2)/(600V/1u)
                                                       V(R)




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                             8
Comparison Graph

Circuit Simulation result




Comparison table


                                             C (pF)
              VR (V)                                                        %Error
                                Measurement           Simulation
                       0.5                 516              523.477               1.45
                            1              466              475.345               2.01
                            2              415              408.956               -1.46
                            5              316              302.138               -4.39
                       10                  241              229.910               -4.60
                       20                  177              170.254               -3.81
                       50                  116              119.043               2.62
                       100                  91               95.455               4.90
                       200                  77               80.434               4.46
                       500                  66               68.925               4.43




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          9

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SPICE MODEL of IDB10S60C (Professional Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDB10S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. Circuit Configuration U1 IDB10S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Forward Current Characteristics Circuit Simulation result 30A 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDB10S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 1 1.000 0.993 -0.70 2 1.053 1.065 1.15 5 1.230 1.239 0.72 10 1.500 1.490 -0.64 20 1.975 1.959 -0.82 30 2.435 2.413 -0.90 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Reverse Current Characteristic Circuit Simulation result 100uA 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDB10S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 100 0.0020 0.0020 0.00 200 0.0055 0.0053 -3.64 400 0.1400 0.1430 2.14 600 5.5000 5.2381 -4.76 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Junction Capacitance Characteristic Circuit Simulation result 600p 500p 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) 600p Evaluation circuit 500p V2 R 400p 0 300p V1 = 0 V1 U1 V2 = 600 IDB10S60C TD = 0 200p TR = 1us TF = 100ns PW = 100us PER = 10m 100p 0 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  • 9. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 516 523.477 1.45 1 466 475.345 2.01 2 415 408.956 -1.46 5 316 302.138 -4.39 10 241 229.910 -4.60 20 177 170.254 -3.81 50 116 119.043 2.62 100 91 95.455 4.90 200 77 80.434 4.46 500 66 68.925 4.43 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9