SPICE MODEL of GT8J101 (Standard Without Model) in SPICE PARK

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SPICE MODEL of GT8J101 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of GT8J101 (Standard Without Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Insulated Gate Bipolar Transistor (IGBT)PART NUMBER: GT8J101MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. Model Model descriptionparameter TAU Ambipolar Recombination Lifetime KP MOS Transconductance AREA Area of the Device AGD Gate-Drain Overlap Area WB Metallurgical Base Width VT Threshold Voltage KF Triode Region Factor CGS Gate-Source Capacitance per Unit Area COXD Gate-Drain Oxide Capacitance per Unit Area VTD Gate-Drain Overlap Depletion Threshold All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Transfer CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Comparison GraphCircuit Simulation ResultSimulation Result Test condition: Vce = 5 V Vge(V) Ic(A) Error (%) Measurement Simulation 1 6.5 6.5090 0.13846 2 7.2 7.1436 -0.78333 5 8.4 8.4511 0.60833 8 9.4 9.4159 0.16915 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Fall Time CharacteristicsCircuit Simulation resultEvaluation circuitTest condition Ic=8(A) ,Vce=300(V) Measurement Simulation Error tf 0.15-0.35 us 0.31277 us 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Gate Charge CharacteristicsCircuit Simulation resultEvaluation circuitTest condition : Vcc=200(V) ,Ic=5.333(A) ,Vge=16(V) Measurement Simulation Error(%) Qge 8 nc 8.0337 nc 0.42125 Qgc 11 nc 10.618 nc -3.47273 Qg 33 nc 32.584 nc -1.26061 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Saturation CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Comparison GraphCircuit Simulation ResultSimulation Result Vce(sat)(V) Ic(A) Error (%) Measurement Simulation 1 1.8 1.7555 -2.47222 2 2 2.0210 1.05000 5 2.4 2.4617 2.57083 8 2.8 2.7618 -1.36429 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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