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SPICE MODEL of CMH05A (Standard Model) in SPICE PARK
SPICE MODEL of CMH05A (Standard Model) in SPICE PARK
SPICE MODEL of CMH05A (Standard Model) in SPICE PARK
SPICE MODEL of CMH05A (Standard Model) in SPICE PARK
SPICE MODEL of CMH05A (Standard Model) in SPICE PARK
SPICE MODEL of CMH05A (Standard Model) in SPICE PARK
SPICE MODEL of CMH05A (Standard Model) in SPICE PARK
SPICE MODEL of CMH05A (Standard Model) in SPICE PARK
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SPICE MODEL of CMH05A (Standard Model) in SPICE PARK

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SPICE MODEL of CMH05A (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of CMH05A (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. Device Modeling ReportCOMPONENTS:DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARDPART NUMBER: CMH05AMANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
  • 2. DIODE MODEL PARAMETERSPSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
  • 3. Forward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 1.0V 2.0V 3.0V 3.8V I(R1) V_V1Evaluation Circuit R1 0.01m V1 0Vdc D1 DCMH05A 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
  • 4. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 1.232 1.196 -2.90 0.2 1.337 1.346 0.68 0.5 1.549 1.581 2.06 1 1.787 1.809 1.24 2 2.104 2.101 -0.13 5 2.668 2.624 -1.64 10 3.187 3.206 0.59 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
  • 5. Capacitance CharacteristicCircuit Simulation Result 100p 10p 1.0p 1.0V 10V 30V I(V2)/(400V/1u) V(N11503)Evaluation Circuit V2 0Vdc V1 = 0 V1 V2 = 400 D1 TD = 0 DCMH05A TR = 1u TF = 50ns PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
  • 6. Comparison GraphCircuit Simulation ResultSimulation Result Cj (pF) Vrev (V) %Error Measurement Simulation 1 9.200 9.219 0.21 2 7.400 7.679 3.77 5 5.650 5.910 4.61 10 4.580 4.799 4.77 20 3.720 3.892 4.63 30 3.300 3.442 4.30 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
  • 7. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.94us 19.98us 20.02us 20.06us 20.10us 20.14us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.1V V2 = 11.4V TD = 13ns V1 TR = 10ns D1 TF = 10ns DCMH05A PER = 50us PW = 20us 0Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 9.20 8.7667 -4.71 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-
  • 8. Reverse Recovery Characteristic Reference MeasurementTrj =9.20(ns)Trb= 6.40(ns)Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -9-

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