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Device Modeling Report



COMPONENTS: Power MOSFET (Standard)
PART NUMBER: 2SK3872-01SJ
MANUFACTURER: Fuji Electric
REMARK: Body Diode (Standard)




                Bee Technologies Inc.


  All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
POWER MOSFET MODEL
 Pspice model
                                       Model description
  parameter
   LEVEL
       L        Channel Length
      W         Channel Width
      KP        Transconductance
      RS        Source Ohmic Resistance
      RD        Ohmic Drain Resistance
     VTO        Zero-bias Threshold Voltage
     RDS        Drain-Source Shunt Resistance
     TOX        Gate Oxide Thickness
    CGSO        Zero-bias Gate-Source Capacitance
    CGDO        Zero-bias Gate-Drain Capacitance
     CBD        Zero-bias Bulk-Drain Junction Capacitance
      MJ        Bulk Junction Grading Coefficient
      PB        Bulk Junction Potential
      FC        Bulk Junction Forward-bias Capacitance Coefficient
      RG        Gate Ohmic Resistance
      IS        Bulk Junction Saturation Current
       N        Bulk Junction Emission Coefficient
      RB        Bulk Series Resistance
     PHI        Surface Inversion Potential
   GAMMA        Body-effect Parameter
    DELTA       Width effect on Threshold Voltage
     ETA        Static Feedback on Threshold Voltage
   THETA        Modility Modulation
   KAPPA        Saturation Field Factor
    VMAX        Maximum Drift Velocity of Carriers
      XJ        Metallurgical Junction Depth
      UO        Surface Mobility




         All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Body Diode Model
 Pspice model
                                       Model description
  parameter
       IS       Saturation Current
       N        Emission Coefficient
      RS        Series Resistance
      IKF       High-injection Knee Current
     CJO        Zero-bias Junction Capacitance
       M        Junction Grading Coefficient
       VJ       Junction Potential
     ISR        Recombination Current Saturation Value
      BV        Reverse Breakdown Voltage(a positive value)
     IBV        Reverse Breakdown Current(a positive value)
       TT       Transit Time




         All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Transconductance Characteristic

Circuit Simulation Result




Comparison table

                                      VGS(V)
     ID(A)                                                               Error (%)
                    Measurement                  Simulation
             1                       5.7                     5.848               2.6
             2                         8                     8.092              1.15
             5                      12.5                      12.2              -2.4
             10                     16.6                    16.442             -0.95




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Vgs-Id Characteristic

Circuit Simulation result

             100A




              80A




              60A




              40A




              20A




               0A
                    0V                       5V                        10V
                         I(V2)
                                            V_V1


Evaluation circuit




                                                              V2


                                                             0V dc

                                                              V3
                                   V1
                         10 Vd c                             10 Vd c




                                              0




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph

Circuit Simulation Result




Simulation Result

                                      VGS(V)
     ID(A)                                                               Error (%)
                    Measurement                  Simulation
              1                      5.4                     5.390            -0.185
              2                     5.57                     5.532            -0.682
              5                     5.89                     5.833            -0.968
             10                     6.22                     6.188            -0.514
             20                     6.73                     6.720            -0.149




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Id-Rds(on) Characteristic

Circuit Simulation result

                     20A




                     10A




                      0A
                           0V                            1.0V                 2.0V
                                I(V2)
                                                         V_V3


Evaluation circuit



                                                                 V2


                                                                0Vdc

                                                                 V3
                                        V1
                                10Vdc                           10Vdc




                                                     0




Simulation Result

    ID=20, VGS=10V                 Measurement              Simulation       Error (%)
        R DS (on)                            58 m                58 m              0



              All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Gate Charge Characteristic
Circuit Simulation result

                  20V

                  18V

                  16V

                  14V

                  12V

                  10V

                   8V

                   6V

                   4V

                   2V

                   0V
                        0           10n     20n         30n      40n       50n    60n        70n      80n
                                 V(W1:3)
                                                              Time*10ms


Evaluation circuit

                                                                                 V2


                                                                                      0Vdc

                                                                                             Dbreak


         PER = 1000u                                                                          D1
         PW = 600u                                                                                          I2
         TF = 10n                          W1
         TR = 10n                            +                                                              40Adc
         TD = 0
         I2 = 10m
                                             -
                            I1             W
         I1 = 0                            IOFF = 1mA                                                       V1
                                           ION = 0uA                                                        115Vdc




                                                                       0

Simulation Result

     VDD=115V,ID=40A                       Measurement                     Simulation                 Error (%)

                  Qgs                                   18 nC                17.78 nC                               -1.22
                  Qgd                                   12 nC                12.11 nC                                0.92



                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Capacitance Characteristic




                                                            Measurement
                                                            Simulation




Simulation Result

                                      Cbd(pF)
        VDS(V)                                                       Error(%)
                        Measurement            Simulation
                   1                2150                  2130           -0.93023
                   2                1740                  1770           1.724138
                   5                1240                  1230           -0.80645
                  10                 880                   860           -2.27273
                 100                 190                   208           9.473684




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Switching Time Characteristic

Circuit Simulation result
             12V
                                    VDS =180 (V)


                                                                                  VGS = 10V

              8V




              4V




              0V
              5.00us                       5.10us                                5.20us      5.25us
                   V(2)        V(3)/18
                                                       Time



Evaluation circuit

                                                                        L1            RL

                                                               3
                                                                   V3   0.05uH        8.9
                                                        0Vdc



                                                                                              VDD
                                                                                       180
                               L2          RG
                                                   2
                               0.03uH
                                           10
             V1 = 0                                                                          0
                          V1
             V2 = 10
             TD = 5u
             TR = 6n
             TF = 7n
             PW = 5u
             PER = 100u
                                                                   0
                          0


Simulation Result

      ID=20A, VDD=180V
                                     Measurement                   Simulation                Error(%)
          VGS=0/10V
           td (on)                         28      ns          28.016            ns                   0.057



              All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output Characteristic

Circuit Simulation result

                 20A
                                    7.0V



                                                                     6.5V




                 10A



                                                                     6.0V




                                                           VGS=5.5V

                     0A
                          0V                  10V                           20V
                               I(V2)
                                             V_V3



Evaluation circuit




                                                              V2


                                                             0V dc

                                                              V3
                                    V1
                          10 Vd c                            10 Vd c




                                              0




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Forward Current Characteristic of Reverse Diode
Circuit Simulation Result



                10A




               1.0A




              100mA




               10mA
                 0.50V                        0.75V                1.00V
                     I(V2)
                                              V_V3


Evaluation Circuit


                                         R1

                                         0.0 1m
                            V2


                         0V dc

                            V3


                         0V dc




                                                      0




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph

Circuit Simulation Result




Simulation Result

                          Vfwd(V)                   Vfwd(V)
        Ifwd(A)                                                             %Error
                        Measurement                Simulation
             0.001                0.504                     0.504                    0
             0.002                0.524                     0.523            -0.23855
             0.005                0.546                     0.546              0.03663
              0.01                0.566                     0.566                    0
             0.021                0.584                     0.585            0.136986
             0.052                 0.61                       0.61           -0.04918
             0.099                0.626                     0.627            0.223642
               0.2                0.648                     0.647            -0.15432
             0.503                0.674                     0.673             -0.11128
             1.004                0.694                     0.694                    0
                 2                0.716                     0.716                    0




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Recovery Characteristic

Circuit Simulation Result

                  400mA




                     0A




              -400mA
                  0.8us     1.2us                1.6us          2.0us   2.4us   2.8us
                      I(R1)
                                                         Time


Evaluation Circuit

                                                    R1

                                                    50




                            V1 = {-9 .4 }   V1
                            V2 = {1 0.7 }
                            TD = 40 n
                            TR = 10 n
                            TF = 10 n
                            PW = 1 u
                            PE R = 10 u



                                            0



                                                                   0



Compare Measurement vs. Simulation

                      Measurement                        Simulation             Error (%)

    trr=trj+trb                      732 ns                         725 ns              0.956



             All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Recovery Characteristic                                        Reference




Trj=488(ns)
Trb=244(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50




                                                     Example




                               Relation between trj and trb




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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SPICE MODEL of 2SK3872-01SJ (Standard+BDS Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Power MOSFET (Standard) PART NUMBER: 2SK3872-01SJ MANUFACTURER: Fuji Electric REMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 4. Transconductance Characteristic Circuit Simulation Result Comparison table VGS(V) ID(A) Error (%) Measurement Simulation 1 5.7 5.848 2.6 2 8 8.092 1.15 5 12.5 12.2 -2.4 10 16.6 16.442 -0.95 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 5. Vgs-Id Characteristic Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 5V 10V I(V2) V_V1 Evaluation circuit V2 0V dc V3 V1 10 Vd c 10 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 5.4 5.390 -0.185 2 5.57 5.532 -0.682 5 5.89 5.833 -0.968 10 6.22 6.188 -0.514 20 6.73 6.720 -0.149 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 7. Id-Rds(on) Characteristic Circuit Simulation result 20A 10A 0A 0V 1.0V 2.0V I(V2) V_V3 Evaluation circuit V2 0Vdc V3 V1 10Vdc 10Vdc 0 Simulation Result ID=20, VGS=10V Measurement Simulation Error (%) R DS (on) 58 m 58 m 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 8. Gate Charge Characteristic Circuit Simulation result 20V 18V 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n V(W1:3) Time*10ms Evaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u I2 TF = 10n W1 TR = 10n + 40Adc TD = 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 115Vdc 0 Simulation Result VDD=115V,ID=40A Measurement Simulation Error (%) Qgs 18 nC 17.78 nC -1.22 Qgd 12 nC 12.11 nC 0.92 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 2150 2130 -0.93023 2 1740 1770 1.724138 5 1240 1230 -0.80645 10 880 860 -2.27273 100 190 208 9.473684 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 10. Switching Time Characteristic Circuit Simulation result 12V VDS =180 (V) VGS = 10V 8V 4V 0V 5.00us 5.10us 5.20us 5.25us V(2) V(3)/18 Time Evaluation circuit L1 RL 3 V3 0.05uH 8.9 0Vdc VDD 180 L2 RG 2 0.03uH 10 V1 = 0 0 V1 V2 = 10 TD = 5u TR = 6n TF = 7n PW = 5u PER = 100u 0 0 Simulation Result ID=20A, VDD=180V Measurement Simulation Error(%) VGS=0/10V td (on) 28 ns 28.016 ns 0.057 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 11. Output Characteristic Circuit Simulation result 20A 7.0V 6.5V 10A 6.0V VGS=5.5V 0A 0V 10V 20V I(V2) V_V3 Evaluation circuit V2 0V dc V3 V1 10 Vd c 10 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 12. Forward Current Characteristic of Reverse Diode Circuit Simulation Result 10A 1.0A 100mA 10mA 0.50V 0.75V 1.00V I(V2) V_V3 Evaluation Circuit R1 0.0 1m V2 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 13. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.001 0.504 0.504 0 0.002 0.524 0.523 -0.23855 0.005 0.546 0.546 0.03663 0.01 0.566 0.566 0 0.021 0.584 0.585 0.136986 0.052 0.61 0.61 -0.04918 0.099 0.626 0.627 0.223642 0.2 0.648 0.647 -0.15432 0.503 0.674 0.673 -0.11128 1.004 0.694 0.694 0 2 0.716 0.716 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 0A -400mA 0.8us 1.2us 1.6us 2.0us 2.4us 2.8us I(R1) Time Evaluation Circuit R1 50 V1 = {-9 .4 } V1 V2 = {1 0.7 } TD = 40 n TR = 10 n TF = 10 n PW = 1 u PE R = 10 u 0 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 732 ns 725 ns 0.956 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 15. Reverse Recovery Characteristic Reference Trj=488(ns) Trb=244(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005