SPICE MODEL of 2SK3872-01S (Professional+BDS Model) in SPICE PARK

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SPICE MODEL of 2SK3872-01S (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK3872-01S (Professional+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Professional)PART NUMBER: 2SK3872-01SMANUFACTURER: Fuji ElectricREMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Transconductance CharacteristicCircuit Simulation ResultComparison table VGS(V) ID(A) Error (%) Measurement Simulation 1 5.7 5.848 2.6 2 8 8.092 1.15 5 12.5 12.2 -2.4 10 16.6 16.442 -0.95 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Vgs-Id CharacteristicCircuit Simulation result 100A 80A 60A 40A 20A 0A 0V 5V 10V I(V2) V_V1Evaluation circuit V2 0V dc U2 V3 2S K3 872 -01 SP V1 10 Vd c 10 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 5.4 5.390 -0.185 2 5.57 5.532 -0.682 5 5.89 5.833 -0.968 10 6.22 6.188 -0.514 20 6.73 6.720 -0.149 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Id-Rds(on) CharacteristicCircuit Simulation result 20A 10A 0A 0V 1.0V 2.0V I(V2) V_V3Evaluation circuit V2 0Vdc U2 V3 2SK3872-01SP V1 10Vdc 10Vdc 0Simulation Result ID=20, VGS=10V Measurement Simulation Error (%) R DS (on) 58 m 58 m 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Gate Charge CharacteristicCircuit Simulation result 20V 18V 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n V(W1:3) Time*10msEvaluation circuit V2 0V dc Db reak PE R = 10 00 u D1 PW = 6 00 u U5 I2 TF = 10 n W1 2S K3 872 -01 SP TR = 10n + 40 Ad c TD = 0 I2 = 1 0m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0 uA 11 5V dc 0Simulation Result VDD=115V,ID=40A Measurement Simulation Error (%) Qgs 18 nC 18.00 nC 0 Qgd 12 nC 12.44 nC 3.67 Qg 42 nC 42 nC 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 2150 2130 -0.93023 2 1740 1770 1.724138 5 1240 1230 -0.80645 10 880 860 -2.27273 100 190 208 9.473684 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Switching Time CharacteristicCircuit Simulation result 12V VDS =180 (V) VGS = 10V 8V 4V 0V 5.00us 5.10us 5.20us 5.25us V(2) V(3)/18 TimeEvaluation circuit L1 RL 3 V3 0.0 5uH 8.9 0V dc VDD 18 0 L2 RG 2 0.0 3uH 10 U4 V1 = 0 2S K3 872 -01 SP 0 V1 V2 = 10 TD = 5u TR = 6n TF = 7n PW = 5 u PE R = 10 0u 0 0Simulation Result ID=20A, VDD=180V Measurement Simulation Error(%) VGS=0/10V td (on) 28 ns 28.056 ns 0.2 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Output CharacteristicCircuit Simulation result 20A 7.0V 6.5V 10A 6.0V VGS=5.5V 0A 0V 10V 20V I(V2) V_V3Evaluation circuit V2 0V dc U4 V3 V1 2S K3 87 2-01 SP 10 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Forward Current Characteristic of Reverse DiodeCircuit Simulation Result 10A 1.0A 100mA 10mA 0.50V 0.75V 1.00V I(V2) V_V3Evaluation Circuit R1 0.0 1m V2 U2 2S K3 872 -01 SP 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.001 0.504 0.504 0 0.002 0.524 0.523 -0.23855 0.005 0.546 0.546 0.03663 0.01 0.566 0.566 0 0.021 0.584 0.585 0.136986 0.052 0.61 0.61 -0.04918 0.099 0.626 0.627 0.223642 0.2 0.648 0.647 -0.15432 0.503 0.674 0.673 -0.11128 1.004 0.694 0.694 0 2 0.716 0.716 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 0.8us 1.2us 1.6us 2.0us 2.4us 2.8us I(R1) TimeEvaluation Circuit R1 50 U1 2S K3 872 -01 SS V1 = {-9 .4 } V1 V2 = {1 0.7} TD = 40n TR = 10n TF = 10 n PW = 1 u PE R = 10 u 0 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 732 ns 731 ns 0.137 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. Reverse Recovery Characteristic ReferenceTrj=488(ns)Trb=244(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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