SPICE MODEL of 2SK3872-01L (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK3872-01L (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SK3872-01L (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SK3872-01L (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK3872-01L (Standard+BDS Model) in SPICE PARK SPICE MODEL of 2SK3872-01L (Standard+BDS Model) in SPICE PARK Document Transcript

  • Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: 2SK3872-01LMANUFACTURER: Fuji ElectricREMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Transconductance CharacteristicCircuit Simulation ResultComparison table VGS(V) ID(A) Error (%) Measurement Simulation 1 5.7 5.848 2.6 2 8 8.092 1.15 5 12.5 12.2 -2.4 10 16.6 16.442 -0.95 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Vgs-Id CharacteristicCircuit Simulation result 100A 80A 60A 40A 20A 0A 0V 5V 10V I(V2) V_V1Evaluation circuit V2 0V dc V3 V1 10 Vd c 10 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 5.4 5.390 -0.185 2 5.57 5.532 -0.682 5 5.89 5.833 -0.968 10 6.22 6.188 -0.514 20 6.73 6.720 -0.149 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Id-Rds(on) CharacteristicCircuit Simulation result 20A 10A 0A 0V 1.0V 2.0V I(V2) V_V3Evaluation circuit V2 0Vdc V3 V1 10Vdc 10Vdc 0Simulation Result ID=20, VGS=10V Measurement Simulation Error (%) R DS (on) 58 m 58 m 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Gate Charge CharacteristicCircuit Simulation result 20V 18V 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n V(W1:3) Time*10msEvaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u I2 TF = 10n W1 TR = 10n + 40Adc TD = 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 115Vdc 0Simulation Result VDD=115V,ID=40A Measurement Simulation Error (%) Qgs 18 nC 17.78 nC -1.22 Qgd 12 nC 12.11 nC 0.92 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 2150 2130 -0.93023 2 1740 1770 1.724138 5 1240 1230 -0.80645 10 880 860 -2.27273 100 190 208 9.473684 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Switching Time CharacteristicCircuit Simulation result 12V VDS =180 (V) VGS = 10V 8V 4V 0V 5.00us 5.10us 5.20us 5.25us V(2) V(3)/18 TimeEvaluation circuit L1 RL 3 V3 0.05uH 8.9 0Vdc VDD 180 L2 RG 2 0.03uH 10 V1 = 0 0 V1 V2 = 10 TD = 5u TR = 6n TF = 7n PW = 5u PER = 100u 0 0Simulation Result ID=20A, VDD=180V Measurement Simulation Error(%) VGS=0/10V td (on) 28 ns 28.016 ns 0.057 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Output CharacteristicCircuit Simulation result 20A 7.0V 6.5V 10A 6.0V VGS=5.5V 0A 0V 10V 20V I(V2) V_V3Evaluation circuit V2 0V dc V3 V1 10 Vd c 10 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Forward Current Characteristic of Reverse DiodeCircuit Simulation Result 10A 1.0A 100mA 10mA 0.50V 0.75V 1.00V I(V2) V_V3Evaluation Circuit R1 0.0 1m V2 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.001 0.504 0.504 0 0.002 0.524 0.523 -0.23855 0.005 0.546 0.546 0.03663 0.01 0.566 0.566 0 0.021 0.584 0.585 0.136986 0.052 0.61 0.61 -0.04918 0.099 0.626 0.627 0.223642 0.2 0.648 0.647 -0.15432 0.503 0.674 0.673 -0.11128 1.004 0.694 0.694 0 2 0.716 0.716 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 0.8us 1.2us 1.6us 2.0us 2.4us 2.8us I(R1) TimeEvaluation Circuit R1 50 V1 = {-9 .4 } V1 V2 = {1 0.7 } TD = 40 n TR = 10 n TF = 10 n PW = 1 u PE R = 10 u 0 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 732 ns 725 ns 0.956 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • Reverse Recovery Characteristic ReferenceTrj=488(ns)Trb=244(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005