SPICE MODEL of 2SK3869 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SK3869 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK3869 (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: 2SK3869MANUFACTURER: TOSHIBABody Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  2. 2. Circuit Configuration 2SK3869MOSFET MODEL Pspice model Model description parameterLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Modility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  3. 3. Transconductance CharacteristicCircuit Simulation ResultComparison table gfs Id(A) Error(%) Measurement Simulation 0.100 0.900 0.911 1.222 0.200 1.250 1.285 2.816 0.500 2.000 2.014 0.690 1.000 2.750 2.824 2.695 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  4. 4. Vgs-Id CharacteristicCircuit Simulation result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V I(V3) V_V1Evaluation circuit V3 0Vdc U3 V2 20Vdc 2SK3869 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  5. 5. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.500 4.400 4.473 1.659 1.000 4.600 4.685 1.848 2.000 4.950 4.987 0.747 5.000 5.550 5.598 0.865 10.000 6.250 6.306 0.896 15.000 6.800 6.862 0.912 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  6. 6. Rds(on) CharacteristicCircuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V2) V_VDSEvaluation circuit V2 0Vdc U6 VDS 0Vdc 2SK3869 VGS 10Vdc 0Simulation Result ID=5A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.550  0.550  0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  7. 7. Gate Charge CharacteristicCircuit Simulation result 20V 16V 12V 8V 4V 0V 0 8n 16n 24n 32n 40n V(W1:2) Time*1mAEvaluation circuit U9 2SK3869 W1 I2 I1 = 0 + D2 I2 = 1m Dbreak 10 - TR = 10n TF = 10n W TD = 0 IOFF = 1mA PER = 1000u ION = 0uA 360 PW = 600u V1 0Simulation Result VDD=360V,ID= 10A Measurement Simulation Error (%) ,VGS=10V Qgs 8 nC 7.973 nC -0.337 Qgd 12 nC 12.02 nC 0.225 Qg 28 nC 25.67 nC -8.300 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 1500.000 1490.000 -0.666 0.200 1300.000 1320.000 1.538 0.500 1150.000 1100.000 -4.347 1.000 800.000 810.000 1.250 2.000 600.000 600.000 0.000 5.000 350.000 355.000 1.428 10.000 270.000 280.000 3.703 20.000 108.000 103.000 -4.629 50.000 76.000 75.000 -1.315 100.000 53.000 54.000 1.886 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  9. 9. Switching Time CharacteristicCircuit Simulation result 12V 10V 8V 6V 4V 2V 0V 1.6us 1.8us 2.0us 2.2us 2.4us V(2) V(3)/20 TimeEvaluation circuit L2 3 50n U2 R1 L1 2 RL 50 30nH 16 V1 = 0 V2 = 20 V2 2SK3869 TD = 2u VDD TR = 6n R2 200Vdc TF = 7n PW = 100u 50 PER = 200u 0Simulation Result ID= 5A, VDD= 200V Measurement Simulation Error(%) VGS=0/10V ton 60.000 ns 60.046 ns 0.0766 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  10. 10. Output CharacteristicCircuit Simulation result 20A 10 16A 15 6.75 V 12A 6.5 V 6.25 V 8A 6V 5.5V 4A VGS= 4.5V 0A 0V 10V 20V 30V 40V 50V I(V3) V_V2Evaluation circuit V3 0Vdc U10 2SK3869 V1 V2 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  11. 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1Evaluation Circuit R1 0.01m U4 V1 0Vdc 2SK3869 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  12. 12. Comparison GraphCircuit Simulation ResultSimulation Result VDS(V) VDS(V) IDR(A) Measurement Simulation %Error 0.100 0.640 0.641 0.156 0.200 0.670 0.663 -1.045 0.500 0.70 0.698 -0.286 1.000 0.720 0.730 1.389 2.000 0.780 0.775 -0.641 5.000 0.870 0.863 -0.805 10.000 0.980 0.971 -0.918 20.000 1.160 1.150 -0.862 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 14us 16us 18us 20us 22us 24us 26us 28us 30us 32us I(RL21) TimeEvaluation Circuit RL21 N07543 50 V1 = -9.40 V2 = 10.68 TD = 1.8u U8 2SK3869 TF = 10n V21 TR = 10n PW = 20u PER = 50u 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 1.20 us 1.207 us 0.608 trb 1.12 us 0.1609 us -85.633 trr 2.32 us 1.368 us -41.025 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  14. 14. Reverse Recovery Characteristic ReferenceTrj=1.20(us)Trb=1.12(us)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V I(R1) V_V1Evaluation Circuit R1 Open 0.01m 2SK3869 V1 0Vdc U5 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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