Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: 2SK3770-01MRMANUFACTURER: Fuji ElectricREMARK: Body ...
POWER MOSFET MODEL Pspice model                                       Model description  parameterLEVELL               Cha...
Body Diode Model Pspice model                                       Model description  parameterIS              Saturation...
Transconductance CharacteristicCircuit Simulation ResultComparison table                                     VGS(V)     ID...
Vgs-Id CharacteristicCircuit Simulation resultEvaluation circuit                                                          ...
Comparison GraphCircuit Simulation ResultSimulation Result                                       VGS(V)     ID(A)         ...
Id-Rds(on) CharacteristicCircuit Simulation resultEvaluation circuit                                                      ...
Gate Charge CharacteristicCircuit Simulation resultEvaluation circuit                                                     ...
Capacitance Characteristic                                                            Measurement                         ...
Switching Time CharacteristicCircuit Simulation result                                    VDS =150 (V)                    ...
Output CharacteristicCircuit Simulation result                                                                    5.7V    ...
Forward Current Characteristic of Reverse DiodeCircuit Simulation ResultEvaluation Circuit                                ...
Comparison GraphCircuit Simulation ResultSimulation Result                          Vfwd(V)                   Vfwd(V)     ...
Reverse Recovery CharacteristicCircuit Simulation ResultEvaluation Circuit                                         R1     ...
Reverse Recovery Characteristic                                        ReferenceTrj=162(ns)Trb=132(ns)Conditions:Ifwd=lrev...
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SPICE MODEL of 2SK3770-01MR (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SK3770-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK3770-01MR (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: 2SK3770-01MRMANUFACTURER: Fuji ElectricREMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. POWER MOSFET MODEL Pspice model Model description parameterLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Modility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Body Diode Model Pspice model Model description parameterIS Saturation CurrentN Emission CoefficientRS Series ResistanceIKF High-injection Knee CurrentCJO Zero-bias Junction CapacitanceM Junction Grading CoefficientVJ Junction PotentialISR Recombination Current Saturation ValueBV Reverse Breakdown Voltage(a positive value)IBV Reverse Breakdown Current(a positive value)TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Transconductance CharacteristicCircuit Simulation ResultComparison table VGS(V) ID(A) Error (%) Measurement Simulation 1 4.53 4.7 3.7528 2 6.5 6.64 2.1538 5 10.25 10.11 -1.366 6 11 10.97 -0.273 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Vgs-Id CharacteristicCircuit Simulation resultEvaluation circuit V2 0Vdc V1 U1 V3 10Vdc 2SK3770-01MRS 25Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.2 4.955 5.05 1.9173 0.5 5.14 5.21 1.3619 1 5.3 5.33 0.566 2 5.51 5.514 0.0726 5 5.9 5.88 -0.339 6 5.97 5.976 0.1005 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Id-Rds(on) CharacteristicCircuit Simulation resultEvaluation circuit V2 0Vdc U1 V3 V1 2SK3770-01MRS 0Vdc 10.0Vdc 0Simulation Result ID=13, VGS=10V Measurement Simulation Error (%) R DS (on) 63 m 63 m 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Gate Charge CharacteristicCircuit Simulation resultEvaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u U1 I2 TF = 10n W1 2SK3770-01MRS 26Adc TR = 10n + TD = 0 I2 = 100m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 60Vdc 0Simulation Result VDD=60V,ID=26A Measurement Simulation Error (%) Qgs 10 nC 10.35 nC 3.5 Qgd 9 nC 9.034 nC 0.38 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 1050 1051 0.095 0.2 1040 1035 0.480 0.5 990 991 0.101 1 930 928 0.215 2 820 829 1.097 5 650 646 0.615 10 500 497 0.6 20 360 360 0 50 220 221 0.454 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Switching Time CharacteristicCircuit Simulation result VDS =150 (V) VGS = 10VEvaluation circuit L1 RL 3 0.05uH 15.7 V3 0Vdc VDD 150Vdc L2 RG 2 0.03uH 12 U3 V1 = 0 V1 IRFB9N30AS 0 V2 = 10 TD = 1u TR = 6n TF = 7n PW = 3u PER = 100u 0 0Simulation Result ID=9.3A, VDD=150V Measurement Simulation Error(%) VGS=0/10V td (on) 10 ns 10.07 ns 0.7 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Output CharacteristicCircuit Simulation result 5.7V 5.6V VGS=5.5VEvaluation circuit V2 0Vdc U1 V3 V1 2SK3770-01MRS 0Vdc 10.0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Forward Current Characteristic of Reverse DiodeCircuit Simulation ResultEvaluation Circuit R1 0.01m V2 2SK3770-01MRS U1 0Vdc V3 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.00102 0.524 0.525 0.19 0.00207 0.544 0.5445 0.0919 0.00503 0.568 0.568 0 0.0099 0.588 0.587 0.17 0.0203 0.606 0.606 0 0.0504 0.632 0.630 0.316 0.103 0.65 0.649 0.153 0.2 0.668 0.668 0 0.5 0.691 0.693 0.289 1 0.712 0.712 0 2 0.734 0.7335 0.068 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Reverse Recovery CharacteristicCircuit Simulation ResultEvaluation Circuit R1 50 2S K3 77 0-01 MRS U1 V1 = -9 .4 V1 V2 = 10 .7 TD = 0 TR = 10 n TF = 10 n PW = 2 0u PE R = 50 u 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 294 ns 294.69 ns 0.235 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. Reverse Recovery Characteristic ReferenceTrj=162(ns)Trb=132(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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