SPICE MODEL of 2SK3611-01MR (Standard+BDS Model) in SPICE PARK

400 views
346 views

Published on

SPICE MODEL of 2SK3611-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Published in: Travel
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
400
On SlideShare
0
From Embeds
0
Number of Embeds
30
Actions
Shares
0
Downloads
2
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of 2SK3611-01MR (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: 2SK3611-01MRMANUFACTURER: Fuji ElectricREMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Transconductance CharacteristicCircuit Simulation ResultComparison table VGS(V) ID(A) Error (%) Measurement Simulation 1.000 3.900 4.000 2.564 2.000 5.800 5.600 -3.448 5.000 8.600 8.600 0.000 10.000 11.800 11.700 -0.847 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Vgs-Id CharacteristicCircuit Simulation result 55A 10A 1.0A 100mA 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V I(V2) V_V1Evaluation circuit V2 0V dc V3 V1 10 Vd c 25 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.200 4.570 4.695 2.735 0.500 4.800 4.824 0.500 1.000 4.980 4.972 -0.161 2.000 5.190 5.183 -0.135 5.000 5.590 5.613 0.411 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Id-Rds(on) CharacteristicCircuit Simulation result 5.0A 2.5A 0A 0V 1.0V 2.0V I(V2) V_V3Evaluation circuit V2 0Vdc V3 V1 10Vdc 25Vdc 0Simulation Result ID=5, VGS=10V Measurement Simulation Error (%) R DS (on) 200 m 200 m 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Gate Charge CharacteristicCircuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n V(W1:3) Time*10msEvaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u I2 TF = 10n W1 TR = 10n + 10Adc TD = 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 125Vdc 0Simulation Result VDD=125V Measurement Simulation Error (%) ,ID=5A Qgs 8.000 nC 8.099 nC 1.232 Qgd 5.000 nC 4.930 nC -1.408 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Capacitance Characteristic (Vds vs. Cbd) Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1.000 830.000 840.000 1.205 2.000 700.000 703.500 0.500 5.000 500.000 485.000 -3.000 10.000 340.000 325.000 -4.412 20.000 194.000 200.500 3.351 50.000 95.700 96.000 0.313 100.000 56.000 53.400 -4.643 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Switching Time CharacteristicCircuit Simulation result 12V VDS =48 (V) VGS = 10V 8V 4V 0V 5.000us 5.050us 5.100us V(2) V(3)/4.8 TimeEvaluation circuit L1 RL 3 V3 0.0 5uH 9.5 0V dc VDD 48 L2 RG 2 0.0 3uH 10 V1 = 0 0 V1 V2 = 10 TD = 5u TR = 6n TF = 7n PW = 5 u PE R = 10 0u 0 0Simulation Result ID=5A, VDD=48V Measurement Simulation Error(%) VGS=0/10V td (on) 12 ns 12.007 ns 0.06 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Output CharacteristicCircuit Simulation result 10A 6.0V 5A 5.5V VGS=5.0V 0A 0V 25V 50V I(V2) V_V3Evaluation circuit V2 0V dc V3 V1 25 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Forward Current Characteristic of Reverse DiodeCircuit Simulation Result 10A 1.0A 100mA 10mA 0V 0.5V 1.0V 1.4V I(V2) V_V3Evaluation Circuit R1 0.0 1m V2 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.100 0.626 0.626 0.003 0.200 0.658 0.654 -0.608 0.500 0.690 0.690 0.009 1.000 0.716 0.716 0.042 2.000 0.742 0.744 0.270 5.000 0.786 0.786 -0.003 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 0.8us 1.2us 1.6us 2.0us 2.4us 2.8us I(R1) TimeEvaluation Circuit R1 50 V1 = {-9 .4 } V1 V2 = {1 0.7 } TD = 75 n TR = 10 n TF = 10 n PW = 1 u PE R = 10 u 0 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 692 ns 692.445 ns 0.064 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. Reverse Recovery Characteristic ReferenceTrj=468(ns)Trb=224(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

×