Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: 2SK3603-01MRMANUFACTURER: Fuji ElectricREMARK: Body ...
POWER MOSFET MODELPspice model                                      Model description parameter  LEVEL      L        Chann...
Body Diode Model Pspice model                                       Model description  parameter       IS       Saturation...
Transconductance CharacteristicCircuit Simulation ResultComparison table                                      VGS(V)     I...
Vgs-Id CharacteristicCircuit Simulation result               40A               10A              1.0A             500mA    ...
Comparison GraphCircuit Simulation ResultSimulation Result                                       VGS(V)     ID(A)         ...
Id-Rds(on) CharacteristicCircuit Simulation result              10A               0A                    0V                ...
Gate Charge CharacteristicCircuit Simulation result                     14V                     12V                     10...
Capacitance Characteristic (Vds vs. Cbd)                                                          Measurement             ...
Switching Time CharacteristicCircuit Simulation result               12V                                  VDS =48 (V)     ...
Output CharacteristicCircuit Simulation result             10A                                                            ...
Forward Current Characteristic of Reverse DiodeCircuit Simulation Result              100A               10A              ...
Comparison GraphCircuit Simulation ResultSimulation Result                          Vfwd(V)                   Vfwd(V)     ...
Reverse Recovery CharacteristicCircuit Simulation Result                  400mA                     0A                  -4...
Reverse Recovery Characteristic                                        ReferenceTrj=195(ns)Trb=125(ns)Conditions:Ifwd=lrev...
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SPICE MODEL of 2SK3603-01MR (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SK3603-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK3603-01MR (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: 2SK3603-01MRMANUFACTURER: Fuji ElectricREMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. POWER MOSFET MODELPspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Transconductance CharacteristicCircuit Simulation ResultComparison table VGS(V) ID(A) Error (%) Measurement Simulation 1 4.3 4.5 4.651 2 6.1 6.3 3.279 5 9.5 9.7 2.105 10 13 13.1 0.769 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Vgs-Id CharacteristicCircuit Simulation result 40A 10A 1.0A 500mA 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V I(V2) V_V1Evaluation circuit V2 0V dc V3 V1 10 Vd c 25 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.5 4.925 4.9767 1.050 1 5.08 5.1087 0.5649 2 5.29 5.2938 0.0718 5 5.67 5.6696 -0.0070 10 6.1 6.12 0.3279 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Id-Rds(on) CharacteristicCircuit Simulation result 10A 0A 0V 2.0V I(V2) V_V3Evaluation circuit V2 0Vdc V3 V1 10Vdc 25Vdc 0Simulation Result ID=8, VGS=10V Measurement Simulation Error (%) R DS (on) 79 m 79.002 m 0.0025 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Gate Charge CharacteristicCircuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n V(W1:3) Time*10msEvaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u I2 TF = 10n W1 TR = 10n + 16Adc TD = 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 75Vdc 0Simulation Result VDD=75V Measurement Simulation Error (%) ,ID=16A Qgs 9 nC 9.05 nC 0.56 Qgd 6 nC 6.01 nC 0.17 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Capacitance Characteristic (Vds vs. Cbd) Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 920 919 -0.1087 2 780 776 -0.5128 5 550 545 -0.9091 10 387 380 -1.8088 20 250 251 0.4 50 133 135 1.5038 100 90 85 -5.5556 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Switching Time CharacteristicCircuit Simulation result 12V VDS =48 (V) VGS = 10V 8V 4V 0V 5.000us 5.050us 5.100us V(2) V(3)/4.8 TimeEvaluation circuit L1 RL 3 V3 0.05uH 6 0Vdc VDD 48 L2 RG 2 0.03uH 10 V1 = 0 0 V1 V2 = 10 TD = 5u TR = 6n TF = 7n PW = 5u PER = 100u 0 0Simulation Result ID=8A, VDD=48V Measurement Simulation Error(%) VGS=0/10V td (on) 12 ns 12.06 ns 0.5 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Output CharacteristicCircuit Simulation result 10A 5.8V 5A 5.6V 5.4V 5.2V VGS=5.0V 0A 0V 5V 10V I(V2) V_V3Evaluation circuit V2 0V dc V3 V1 10 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Forward Current Characteristic of Reverse DiodeCircuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 0.5V 1.0V 1.4V I(V2) V_V3Evaluation Circuit R1 0.0 1m V2 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.100 0.624 0.631 1.090 0.200 0.658 0.655 -0.456 0.500 0.690 0.687 -0.435 1.000 0.714 0.711 -0.420 2.000 0.736 0.735 -0.204 5.000 0.764 0.766 0.262 10.000 0.788 0.790 0.254 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 0.4us 0.8us 1.2us 1.6us 2.0us 2.4us I(R1) TimeEvaluation Circuit R1 50 V1 = {-9.4} V1 V2 = {10.7} TD = 75n TR = 10n TF = 10n PW = 1u PER = 10u 0 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 320 ns 316 ns 1.250 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. Reverse Recovery Characteristic ReferenceTrj=195(ns)Trb=125(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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