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SPICE MODEL of 2SK3110 (Standard+BDS Model) in SPICE PARK
 

SPICE MODEL of 2SK3110 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SK3110 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SK3110 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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    SPICE MODEL of 2SK3110 (Standard+BDS Model) in SPICE PARK SPICE MODEL of 2SK3110 (Standard+BDS Model) in SPICE PARK Document Transcript

    • Device Modeling ReportCOMPONENTS: Power MOSFET (Model parameters)PART NUMBER: 2SK3110MANUFACTURER: NECBody Diode (Model parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • MOSFET MODELPSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Transconductance CharacteristicCircuit Simulation Result 10 9 8 7 6 gfs 5 4 3 2 Measurement 1 Simulation 0 0 1 2 3 4 5 6 7 8 9 10 ID - Drain Current - AComparison table gfs Id(A) Error(%) Measurement Simulation 0.1 0.830 0.833 0.361 0.2 1.175 1.176 0.085 0.5 1.850 1.852 0.108 1 2.550 2.564 0.549 2 3.600 3.621 0.583 5 5.600 5.618 0.321 10 7.500 7.634 1.787 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Vgs-Id CharacteristicCircuit Simulation result 100A 10A 1.0A 100mA 10mA 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V 11V 12V I(V3) V_V2Evaluation circuit V3 0Vdc U29 Vv ariable 2SK3110 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Comparison GraphCircuit Simulation Result 10.00 Measurement 9.00 Simulation 8.00 7.00 ID - Drain Current - A 6.00 5.00 4.00 3.00 2.00 1.00 0.00 0 1 2 3 4 5 6 7 8 9 10 11 12 VGS - Gate to Source Voltage - VSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.01 4.150 4.330 4.337 0.02 4.200 4.364 3.905 0.05 4.400 4.428 0.636 0.1 4.550 4.501 -1.077 0.2 4.610 4.604 -0.130 0.5 4.900 4.809 -1.857 1 5.200 5.042 -3.038 2 5.400 5.374 -0.481 5 5.850 6.044 3.316 10 6.700 6.815 1.716 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Rds(on) CharacteristicCircuit Simulation result 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(V3) V_VDSEvaluation circuit V3 0Vdc U29 VDS 10Vdc 2SK3110 0Vdc VGS 0Simulation Result ID=7A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.120 0.120 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Gate Charge CharacteristicCircuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n 50n 60n V(W1:3) Time*1mSEvaluation circuit V2 0Vdc U29 Dbreak PER = 1000u PW = 600u W1 2SK3110 TF = 10n + D1 TR = 10n I2 - TD = 0 14Adc I2 = 1m W I1 IOFF = 1mA I1 = 0 ION = 0uA V1 160Vdc 0Simulation Result VDD=160V,ID=14A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 7.000 7.051 0.729 Qgd(nC) 25.000 25.000 0.000 Qg 42.000 36.282 -13.614 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Switching Time CharacteristicCircuit Simulation result 12V 10V 8V 6V 4V 2V 0V 0.90us 0.95us 1.00us 1.05us 1.10us 1.15us 1.20us 1.25us V(L2:1)/10 V(L1:2) TimeEvaluation circuit L2 R2 30nH 14 R1 L1 U32 2SK3110 30nH V1 = 0 10 V1 V2 = 20 V2 100Vdc TD = 1u R3 TR = 1n TF = 1n 10 PW = 10u PER = 200u 0Simulation Result ID=40 A, VDD=30V Measurement Simulation Error(%) VGS=0/10V Ton(ns) 25.000 25.461 1.844 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Output CharacteristicCircuit Simulation result 20A 10V 9V 18A 8V 16A 14A 7V 12A 10A 8A 6A 6V 4A 2A VGS=5V 0A 0V 2V 4V 6V 8V 10V I(Vdsense) V_VvariableEvaluation circuit Vdsense 0Vdc U31 2SK3110 Vv ariable 10Vdc 10Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1Evaluation Circuit R1 0.01m V1 2SK3110 0Vdc U28 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Comparison GraphCircuit Simulation Result 10 Measurement Simulation Drain reverse current IDR(A) 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Source-Drain voltage VSD(V)Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.1 0.662 0.660 -0.302 0.2 0.687 0.690 0.437 0.5 0.721 0.720 -0.139 1 0.752 0.755 0.399 2 0.787 0.790 0.381 5 0.855 0.850 -0.585 10 0.938 0.940 0.213 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 4.0us 4.4us 4.8us 5.2us 5.6us 6.0us 6.4us 6.8us 7.2us 7.6us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.7v 2SK3110 TD = 265n TR = 10ns U29 TF = 19ns PW = 5us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) Trr(ns) 700 697.047 -0.422 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Reverse Recovery Characteristic ReferenceTrj=480.00(ns)Trb=220.000(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • ESD PROTECTION DIODEZener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1Evaluation Circuit R1 0.01m V1 0Vdc R2 2SK3110 100MEG U30 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
    • Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007