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SPICE MODEL of 2SK3058 (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of 2SK3058 (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of 2SK3058 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SK3058 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. Device Modeling ReportCOMPONENTS: MOSFET (Professional Model)PART NUMBER: 2SK3058MANUFACTURER: NEC CorporationREMARK: Body Diode (Professional Model) /ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 2. MOSFET MODEL PARAMETERSPSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 3. Transconductance CharacteristicsCircuit Simulation Result 100 Measurement Simulation TRANSCONDUCTANCE Gfs(s) 10 1 0 4 8 12 16 20 DRIAN CURRENT ID (A)Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 1 13.6986 13.7800 0.5940 2 17.1253 17.0000 -0.7317 5 25.0000 25.1235 0.4942 10 36.0101 36.2158 0.5712 20 60.0000 59.8892 -0.1847 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 4. Vgs-Id CharacteristicsCircuit Simulation Result 100A 10A 1.0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V I(V2) V_VGSEvaluation circuit V2 U1 2SK3058 VDD 10Vdc VGS 0Vdc 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 5. Comparison GraphCircuit Simulation Result 100 Measurement Simulation ID - Drain Current -A 10 1 1 2 3 4 VGS - Gate to Source Voltage - VComparison table VGS(V) ID(A) Measurement Simulation Error (%) 1 2.1700 2.1786 0.3963 2 2.2800 2.2633 -0.7325 5 2.4500 2.4426 -0.3020 10 2.6500 2.6609 0.4113 20 2.9600 2.9900 1.0135 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 6. *Rds(on) CharacteristicCircuit Simulation result 28.0A 25.2A 22.4A 19.6A 16.8A 14.0A 11.2A 8.4A 5.6A 2.8A 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V I(V2) V_VDDEvaluation circuit V2 U1 2SK3058 VDD 10Vdc VGS 10Vdc 0 0 0Simulation Result ID=28A, VGS=10V Measurement Simulation Error (%) R DS (on) 12.000 m 12.017 m 0.1416 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 7. Gate Charge CharacteristicCircuit Simulation result 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n 90n 100n V(W1:3) Time*1.0mAEvaluation circuit Vsense U1 2SK3058 I1 D1 Dbreak 55Adc W1 + - I2 W VD ION = 0A 48Vdc IOFF = 1.1mA 0Simulation Result VDD=48V,ID=55A ,VGS=10V Measurement Simulation Error (%) Qgs 7.00 nC 6.69 nC -4.4285 Qgd 18.00 nC 18.73 nC 4.0555 Qg 46.00 nC 44.40 nC -3.4782 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 780.000 779.625 -0.048 2 610.000 615.899 0.967 5 420.000 430.794 2.570 10 330.000 321.183 -2.672 20 245.000 237.566 -3.034 50 150.000 158.466 5.644 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 9. Switching Time CharacteristicCircuit Simulation result 12V 11V 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0.8us 1.0us 1.2us 1.4us V(L3:2) V(3)/3 TimeEvaluation circuit Vsense RL 3 10 V1 = 0 U1 2SK3058_pro R1 L3 V2 = 20 2 10 TD = 1u 30nH VD 30Vdc TR = 10n V1 R2 TF = 10n 10 PW = 10u PER = 10m 0Simulation Result ID=28A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td (on) 36.000 ns 36.012 ns 0.0333 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 10. Output CharacteristicCircuit Simulation result 100A 90A VGS=10V 80A 70A 60A 50A VGS= 4.0V 40A 30A 20A 10A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(V2) V_VDSEvaluation circuit V2 U1 2SK3058 VDS 10Vdc VGS 10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1Evaluation Circuit V2 VGS 0Vdc VDS 0Vdc U1 2SK3058 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 12. Comparison GraphCircuit Simulation Result 1000 Measurement Simulation 100 Diode Forward Current - A 10 1 0.1 0.01 0 0.5 1 1.5 2 Source to Drain Voltage - VSimulation Result VDS(V) IDR(A) Measurement Simulation %Error 0.1 0.5950 0.5967 0.2857 0.2 0.6220 0.6211 -0.1447 0.5 0.6550 0.6546 -0.0611 1 0.6810 0.6804 -0.0881 2 0.7100 0.7084 -0.2254 5 0.7540 0.7515 -0.3316 10 0.7920 0.7936 0.2020 20 0.8600 0.8570 -0.3488 50 1.0100 1.0000 -0.9901 100 1.2000 1.2144 1.2000 200 1.6200 1.6144 -0.3457 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 14.96us 15.04us 15.12us 15.20us 15.28us 15.36us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.5V V2 = 10.5 U1 D2SK3058_pro TD = 50n V1 TR = 10n TF = 10n PW = 15us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 32.000 ns 32.021 ns 0.065 trb 51.000 ns 51.210 ns 0.411 trr 83.000 ns 83.321 ns 0.3867 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 14. Reverse Recovery Characteristic ReferenceTrj=32(ns)Trb=51(ns)Conditions:Ifwd=0.2,lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(V2) V_VGSEvaluation Circuit U1 2SK3058 V2 ID 0Adc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006