SPICE MODEL of 2SK3057 (Professional+BDP Model) in SPICE PARK
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This document provides a summary of the device modeling report for a MOSFET transistor. It lists the component as a MOSFET from NEC with a professional model. It then provides the SPICE model parameters for the MOSFET and simulation results comparing measurements to simulations for transconductance, voltage-current characteristics, resistance, capacitance, switching times and more. It also summarizes the body diode and ESD protection diode SPICE models and simulation results.
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SPICE MODEL of 2SK3057 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Professional Model) PART NUMBER: 2SK3057 MANUFACTURER: NEC Corporation REMARK: Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. MOSFET MODEL PARAMETERS PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. Transconductance Characteristics Circuit Simulation Result 100 Measurement Simulation TRANSCONDUCTANCE Gfs(s) 10 1 0 2 4 6 8 10 12 14 16 18 20 DRIAN CURRENT ID (A) Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 1 7.00000 7.09987 1.427 2 9.00000 9.13247 1.472 5 13.00000 13.25145 1.934 10 18.24818 18.36589 0.645 20 26.14379 26.56560 1.613 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Vgs-Id Characteristics Circuit Simulation Result 100A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V2) V_VGS Evaluation circuit V2 U1 2SK3057_PRO VDD 10Vdc VGS 0 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Comparison Graph Circuit Simulation Result 100 Measurement Simulation ID - Drain Current -A 10 1 0.1 0 2 4 VGS - Gate to Source Voltage - V Comparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.1 1.9500 2.0221 3.6974 0.2 2.0000 2.0468 2.3400 0.5 2.0800 2.0969 0.8125 1 2.1500 2.1550 0.2326 2 2.2500 2.2401 -0.4400 5 2.4300 2.4190 -0.4527 10 2.6200 2.6638 1.6718 20 2.9600 2.9741 0.4764 50 3.7500 3.7451 -0.1307 100 4.7800 4.7758 -0.0879 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. *Rds(on) Characteristic Circuit Simulation result 30A 25A 20A 15A 10A 5A 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V I(V2) V_VDD Evaluation circuit V2 U1 2SK3057_PRO VDD 10Vdc VGS 10Vdc 0 0 0 Simulation Result ID=23A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.01200 m 0.01213 m 1.083 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Gate Charge Characteristic Circuit Simulation result 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0 5n 10n 15n 20n 25n 30n 35n 40n 45n V(W1:3) Time*1mA Evaluation circuit Vsense U1 I1 D1 Dbreak 45Adc W1 + I2 - 2SK3057_PRO W ION = 0A VD IOFF = 1.1mA 48Vdc 0 Simulation Result VDD=48V,ID=45A Measurement Simulation Error (%) ,VGS=10V Qgs 6.700 nC 6.90000 nC 2.98507 Qgd 19.000 nC 19.01000 nC 0.05263 Qg 45.000 nC 43.50000 nC -3.33333 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 0.97500 0.97900 0.410 0.2 0.94500 0.94800 0.317 0.5 0.88000 0.87000 -1.136 1 0.78000 0.77200 -1.026 2 0.63000 0.64000 1.587 5 0.45000 0.45200 0.444 10 0.33000 0.32800 -0.606 20 0.23000 0.23000 0.230 60 0.13000 0.12600 -3.077 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Switching Time Characteristic Circuit Simulation result 12V 11V 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0.800us 0.900us 1.000us 1.100us 1.200us V(L3:2) V(3)*0.332 Time Evaluation circuit Vsense RL 3 1.3 U1 V1 = 0 R1 L3 V2 = 20 2 2SK3057_PRO 30nH TD = 1u 10 VD 30Vdc TR = 10n V1 R2 TF = 10n 10 PW = 10u PER = 50u 0 Simulation Result ID=23A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td (on) 35.000 ns 35.850 ns -0.4166 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Output Characteristic Circuit Simulation result 100A VGS 10V 80A 60A VGS=4V 40A 20A 0A 0V 1.0V 2.0V 3.0V 4.0V I(V2) V_VDS Evaluation circuit V2 U1 2SK3057_PRO VDS 10Vdc VGS 10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 2SK3057_PRO V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation 100 Diode Forward Current - A 10 1 0.1 0 0.5 1 1.5 2 Source to Drain Voltage - V Simulation Result VDS(V) VDS(V) IDR(A) Measurement Simulation %Error 0.1 0.6100 0.6063 -0.6066 0.2 0.6200 0.6231 0.5000 0.5 0.6500 0.6499 -0.0154 1 0.6750 0.6747 -0.0444 2 0.7000 0.7042 0.6000 5 0.7500 0.7509 0.1200 10 0.8000 0.7963 -0.4625 20 0.8700 0.8597 -1.1839 50 1.0000 1.0038 0.3800 100 1.2000 1.2108 0.9000 200 1.6000 1.5974 -0.1625 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.92us 20.00us 20.08us 20.16us 20.24us 20.32us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4V U1 V2 = 10.7 D2SK3057_PRO TD = 0 V1 TR = 20n TF = 20n PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 24.000 ns 23.980 ns -0.083 trb 68.000 ns 68.100 ns 0.147 trr 92.000 ns 92.080 ns 0.087 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Reference Trj=24ns) Trb=68(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V 55V I(V2) V_VGS Evaluation Circuit U1 2SK3057_PRO V2 ID 0Adc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007