Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: 2SK2740MANUFACTURER: ROHMREMARK: Body Diode (Standar...
POWER MOSFET MODEL Pspice model                                       Model description  parameter   LEVEL       L        ...
Body Diode Model Pspice model                                       Model description  parameter       IS       Saturation...
Transconductance CharacteristicCircuit Simulation ResultComparison table                                     VGS(V)     ID...
Vgs-Id CharacteristicCircuit Simulation result                  20A                  10A                 1.0A             ...
Comparison GraphCircuit Simulation ResultSimulation Result                                     VGS(V)     ID(A)           ...
Id-Rds(on) CharacteristicCircuit Simulation result                 5.0A                     0A                          0V...
Gate Charge CharacteristicCircuit Simulation result                        20V                        18V                 ...
Capacitance Characteristic (Vds vs. Cbd)                                                             Measurement          ...
Switching Time CharacteristicCircuit Simulation result               12V                                  VDS =153 (V)    ...
Output CharacteristicCircuit Simulation result               10A                                                          ...
Output Characteristic                                                    Reference                                        ...
Forward Current Characteristic of Reverse DiodeCircuit Simulation Result                  10A                 1.0A        ...
Comparison GraphCircuit Simulation ResultSimulation Result                          Vfwd(V)                   Vfwd(V)     ...
Reverse Recovery CharacteristicCircuit Simulation Result                      400mA                         0A            ...
Reverse Recovery Characteristic                                        ReferenceTrj=1.480(us)Trb=0.880(us)Conditions:Ifwd=...
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SPICE MODEL of 2SK2740 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SK2740 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK2740 (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: 2SK2740MANUFACTURER: ROHMREMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Transconductance CharacteristicCircuit Simulation ResultComparison table VGS(V) ID(A) Error (%) Measurement Simulation 1.000 2.450 2.350 -4.082 2.000 3.330 3.260 -2.102 5.000 5.000 5.050 1.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Vgs-Id CharacteristicCircuit Simulation result 20A 10A 1.0A 100mA 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V I(V2) V_V1Evaluation circuit V2 0V dc V3 V1 10 Vd c 25 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.500 4.330 4.440 2.540 1.000 4.650 4.694 0.946 2.000 5.050 5.052 0.040 5.000 5.780 5.772 -0.138 7.000 6.150 6.136 -0.228 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Id-Rds(on) CharacteristicCircuit Simulation result 5.0A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V2) V_V3Evaluation circuit V2 0Vdc V3 V1 10Vdc 25Vdc 0Simulation Result ID=4, VGS=10V Measurement Simulation Error (%) R DS (on) 1.000  1.000  0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Gate Charge CharacteristicCircuit Simulation result 20V 18V 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 4n 8n 12n 16n 20n 24n 28n 32n 36n 40n V(W1:3) Time*10msEvaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u I2 TF = 10n W1 7Adc TR = 10n + TD = 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 250Vdc 0Simulation Result VDD=250V Measurement Simulation Error (%) ,ID=7A Qgs 7.200 nC 7.210 nC 0.139 Qgd 20.800 nC 20.790 nC -0.048 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Capacitance Characteristic (Vds vs. Cbd) Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1.000 250.000 253.000 1.200 2.000 230.000 226.300 -1.609 5.000 180.000 176.500 -1.944 10.000 133.000 135.000 1.504 20.000 96.000 98.000 2.083 50.000 58.000 60.300 3.966 100.000 42.000 41.000 -2.381 200.000 29.000 28.000 -3.448 500.000 17.000 16.500 -2.941 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Switching Time CharacteristicCircuit Simulation result 12V VDS =153 (V) VGS = 10V 8V 4V 0V 5.00us 5.10us 5.20us V(2) V(3)/15.3 TimeEvaluation circuit L1 RL 3 V3 0.03uH 37.5 0Vdc VDD 153 L2 RG 2 0.03uH 10 V1 = 0 0 V1 V2 = 10 TD = 5u TR = 6n TF = 7n PW = 10u PER = 100u 0 0Simulation Result ID=4A, VDD=153V Measurement Simulation Error(%) VGS=0/10V td (on) 19.000 ns 18.994 ns -0.032 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Output CharacteristicCircuit Simulation result 10A 6.0V 5A 5.5V 5.0V VGS=4.5V 0A 0V 25V 50V I(V2) V_V3Evaluation circuit V2 0V dc V3 V1 25 Vd c 10 .0Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Output Characteristic Reference 6.0V 5.5V 5.0V VGS=4.5V All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Forward Current Characteristic of Reverse DiodeCircuit Simulation Result 10A 1.0A 100mA 0V 1.0V 1.6V I(V2) V_V3Evaluation Circuit R1 0.0 1m V2 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.100 0.598 0.594 -0.669 0.200 0.620 0.620 -0.020 0.500 0.658 0.658 0.024 1.000 0.692 0.693 0.166 2.000 0.738 0.739 0.163 5.000 0.838 0.837 -0.097 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 14us 18us 22us 26us 30us 34us I(R1) TimeEvaluation Circuit R1 50 V1 = {-9.4} V1 V2 = {10.7} TD = 100n TR = 10n TF = 10n PW = 5u PER = 50u 0 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 2.360 us 2.361 us 0.042 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  16. 16. Reverse Recovery Characteristic ReferenceTrj=1.480(us)Trb=0.880(us)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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