SPICE MODEL of 2SK2414 (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of 2SK2414 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK2414 (Professional+BDP Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: MOSFET (Professional Model)PART NUMBER: 2SK2414MANUFACTURER: NEC CorporationREMARK: Body Diode (Professional Model) /ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  2. 2. MOSFET MODEL PARAMETERSPSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  3. 3. Transconductance Characteristic sCircuit Simulation Result 100 Measurement Simulation TRANSCONDUCTANCE Gfs(s) 10 1 0 5 10 15 20 DRIAN CURRENT ID (A)Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 1 5.535 5.435 -1.807 2 7.591 7.491 -1.317 5 11.390 11.499 0.961 10 15.385 15.212 -1.120 20 20.665 19.802 -4.176 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  4. 4. Vgs-Id CharacteristicsCircuit Simulation Result 100A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(V2) V_VGSEvaluation circuit Vsense U1 2SK2414 VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  5. 5. Comparison GraphCircuit Simulation Result 100 ID - Drain Current -A 10 1 Measurement Simulation 0.1 1 2 3 4 5 VGS - Gate to Source Voltage - VComparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.1 1.950 1.884 -3.369 0.2 1.980 1.932 -2.424 0.5 2.050 2.028 -1.088 1 2.150 2.137 -0.595 2 2.300 2.295 -0.222 5 2.600 2.618 0.696 10 3.000 2.999 -0.050 20 3.700 3.563 -3.716 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  6. 6. *Rds(on) CharacteristicCircuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(V2) V_VDDEvaluation circuit V2 U1 2SK2414 VDD VGS 10Vdc 10Vdc 0 0 0Simulation Result ID=5.0A, VGS=10V Measurement Simulation Error (%) R DS (on) 52.00 m 52.00 m 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  7. 7. Gate Charge CharacteristicCircuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 5n 10n 15n 20n 24n V(W1:3) Time*1mAEvaluation circuit Vsense U5 I1 2SK2414_P D1 Dbreak 10Adc W1 + I2 - W VD ION = 0A 48Vdc IOFF = 1.1mA 0Simulation Result VDD=48V,ID=10A, VGS=10V Measurement Simulation Error (%) QGS nC 2.600 2.605 0.192 QGD nC 6.000 6.073 1.217 QG nC 24.000 24.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd (pF) VDS(V) Error(%) Measurement Simulation 1 600.00 600.00 0.00 2 510.00 508.00 -0.39 5 400.00 388.00 -3.00 10 320.00 309.00 -3.44 20 250.00 248.00 -0.80 50 165.00 160.00 -3.03 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  9. 9. Switching Time CharacteristicCircuit Simulation result 12V 10V 8V 6V 4V 2V 0V -2V 0.95us 1.00us 1.05us 1.10us V(3)/3.0 V(L3:2) TimeEvaluation circuit Vsense RL 3 6.0 R1 L3 U2 2 2SK2414 VDD 30nH V1 = 0 10 30Vdc V2 = 20 TD = 1u V1 TF = 1n R2 TR = 1n PW = 1u 10 PER = 10m 0Simulation Result ID=5.0A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td(on) ns 15.00 15.01 0.067 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  10. 10. Output CharacteristicCircuit Simulation result 50A VGS =10V VGS= 6.0V 40A VGS=4.0V 30A 20A 10A 0A 0V 2.0V 4.0V 6.0V 8.0V 10.0V I(V2) V_VDSEvaluation circuit V2 U1 2SK2414 VDS VGS 10Vdc 0Vdc 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  11. 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(V2) V_VDSEvaluation Circuit V2 U1 2SK2414 VDS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  12. 12. Comparison GraphCircuit Simulation Result 100 Measurement Simulation ISD - Diode Forward Current - A 10 1 0.1 0 1 2 VSD - Source to Drain Voltage - VSimulation Result VDS(V) ISD(A) Measurement Simulation %Error 0.1 0.6400 0.6401 0.0156 0.2 0.6550 0.6652 1.5573 0.5 0.6800 0.6794 -0.0882 1 0.7000 0.7032 0.4571 2 0.7400 0.7376 -0.3243 5 0.8200 0.8182 -0.2195 10 0.9500 0.9365 -1.4211 20 1.1400 1.1601 1.7632 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 14.7us 14.9us 15.1us 15.3us 15.5us 15.7us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.5V V2 = 10.5 TD = 50n V1 U1 2SK2414 TR = 10n TF = 10n PW = 15us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trr (ns) 130.00 130.10 0.077 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  14. 14. Reverse Recovery Characteristic ReferenceTrj=60.0(ns)Trb=70.0(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V I(V2) V_VGSEvaluation Circuit U2 2SK2414 V2 ID 0Adc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

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