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SPICE MODEL of 2SK2412 (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of 2SK2412 (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of 2SK2412 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SK2412 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Professional Model )PART NUMBER: 2SK2412MANUFACTURER: NECREMARK: N Channel ModelBody Diode (Professional Model) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 2. MOSFET MODEL PSpice model Model description parameterLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Modility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 3. Transconductance CharacteristicsCircuit Simulation Result 17 Measurement 15 Simullation TRANSCONDUCTANCE Gfs(s) 13 11 9 7 5 3 1 0 2 4 6 8 10 DRIAN CURRENT ID (A)Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 0.2 2.174 2.240 3.040 0.5 3.650 3.700 1.380 1 5.155 5.200 0.880 2 7.180 7.092 -1.223 5 11.300 11.111 -1.672 10 16.300 15.823 -2.928 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 4. Vgs-Id CharacteristicsCircuit Simulation Result 20A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V I(V2) V_VGSEvaluation circuit V2 U7 2SK2412 VDS 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 5. Comparison GraphCircuit Simulation Result 100 Measurement Simulation ID - Drain Current - A 10 1 0.1 0 2 4 VGS - Gate to Source Voltage - VComparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.1 2.000 1.932 -3.390 0.2 2.050 1.985 -3.171 0.5 2.120 2.091 -1.382 1 2.200 2.210 0.436 2 2.350 2.378 1.196 5 2.650 2.713 2.389 10 3.000 3.093 3.093 20 3.600 3.632 0.900 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 6. *Rds(on) CharacteristicCircuit Simulation result 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 100mV 200mV 300mV 400mV 500mV I(V2) V_VDSEvaluation circuit V2 U7 2SK2412 VDS 10Vdc VGS 10Vdc 0Simulation Result ID=10, VGS=10V Measurement Simulation Error (%) R DS (on) 50 m 50 m 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 7. Gate Charge CharacteristicCircuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 5n 10n 15n 20n 25n 30n 35n 40n V(W1:3) Time*1mAEvaluation circuit Vsense U1 2SK2412_pro I1 D1 W1 Dbreak 20Adc + TD = 0 - I2 ION = 0A W IOFF = 1mA VD 48Vdc 0Simulation Result VDD=48V,ID=20A Measurement Simulation Error (%) ,VGS=10V Qgs nC 2.70 2.62 -2.96 Qgd nC 8.90 8.96 0.67 Qg nC 27.00 27.03 0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 590.000 588.500 -0.2542 2 490.000 489.200 -0.1633 5 380.000 381.224 0.3221 10 300.000 299.250 -0.2500 20 240.000 230.995 -3.7521 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 9. Switching Time CharacteristicCircuit Simulation result 20V 16V 12V 8V 4V 0V -4V -8V 0.93us 0.96us 0.99us 1.02us 1.05us 1.08us 1.11us V(L3:2) V(Vsense:+)/3.1Evaluation circuit Time Vsense RL 3.0 U1 R1 L3 2SK2412_pro 10 20nH V1 = 0 VDD V2 = 20 V1 30Vdc TD = 1u R2 TR = 20n TF = 20n 10 PW = 10u PER = 20u 0Simulation Result ID=10A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td(on) ns 15.000 14.987 -0.087 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 10. Output CharacteristicCircuit Simulation result 80A 10.0V 70A 6.0V 60A 50A 40A VGS=4.0V 30A 20A 10A 0A 0V 2V 4V 6V 8V 10V 12V I(V2) V_VDSEvaluation circuit V2 U7 2SK2412 VDS 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V I(R1) V_V1Evaluation Circuit R1 0.01m U1 2SK2412 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 12. Comparison GraphCircuit Simulation Result 100 Measurement Simulation Diode Forward Current - A 10 1 0.1 0 1 2 Source to Drain Voltage - VSimulation Result VDS(V) IDR(A) Measurement Simulation %Error 0.1 0.620 0.620 -0.032 0.2 0.640 0.642 0.359 0.5 0.680 0.676 -0.574 1 0.710 0.708 -0.268 2 0.750 0.751 0.173 5 0.840 0.846 0.679 10 0.980 0.975 -0.561 20 1.200 1.202 0.125 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.8us 1.0us 1.2us 1.4us 1.6us 1.8us I(R1) TimeEvaluation Circuit R1 50 U1 2SK2412_pro V1 = -9.4V V1 V2 = 10.7V TD = 160n TR = 10ns TF = 5.7ns PW = 1us PER = 50us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 60.10 59.63 -0.79 trb ns 69.70 69.66 -0.06 trr ns 129.80 129.28 -0.40 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 14. Reverse Recovery Characteristic Reference MeasurementTrj=60.10(ns)Trb=69.70(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V I(R1) V_V1Evaluation Circuit R1 0.01m open open V1 0Vdc Ropen U1 M2SK2412 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 16. Zener Voltage Characteristic Reference Measurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2007