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SPICE MODEL of 2SK1544 (Standard+BDS Model) in SPICE PARK
 

SPICE MODEL of 2SK1544 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SK1544 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SK1544 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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    SPICE MODEL of 2SK1544 (Standard+BDS Model) in SPICE PARK SPICE MODEL of 2SK1544 (Standard+BDS Model) in SPICE PARK Document Transcript

    • Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: 2SK1544MANUFACTURER: TOSHIBABody Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • MOSFET MODELPspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Transconductance CharacteristicCircuit Simulation ResultComparison table gfs Id(A) Error(%) Measurement Simulation 0.200 2.100 2.129 1.381 0.500 3.300 3.301 0.030 1.000 4.600 4.561 -0.848 2.000 6.400 6.249 -2.359 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Vgs-Id CharacteristicCircuit Simulation result 40A 35A 30A 25A 20A 15A 10A 5A 0A 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V 12V I(V3) V_V1Evaluation circuit V3 0Vdc U2 V2 2SK1544 20Vdc V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 2.000 3.900 3.809 -2.333 5.000 4.300 4.201 -2.302 10.000 4.800 4.671 -2.687 20.000 5.450 5.386 -1.174 25.000 5.750 5.691 -1.026 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Rds(on) CharacteristicCircuit Simulation result 12A 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V I(V2) V_VDSEvaluation circuit V2 0Vdc U6 VDS 2SK1544 0Vdc VGS 10Vdc 0Simulation Result ID=13A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.150  0.149  -0.667 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Gate Charge CharacteristicCircuit Simulation result 20V 16V 12V 8V 4V 0V 0 40n 80n 120n 160n 200n V(W1:2) Time*1mAEvaluation circuit U9 W1 I2 + D2 Dbreak 25 I1 = 0 - 2SK1544 I2 = 1m W TD = 0 IOFF = 1mA TR = 10n ION = 0uA 400 TF = 10n I1 PER = 1000u PW = 600u V1 0Simulation Result VDD=400V,ID=25A Measurement Simulation Error (%) ,VGS=10V Qgs 20.000 nC 19.775 nC -1.125 Qgd 88.000 nC 86.742 nC -1.430 Qg 150.00 nC 122.926 nC -18.049 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 2200.000 2100.000 4.545 0.200 2000.000 1900.000 5.000 0.500 1550.000 1600.000 -3.226 1.000 1300.000 1300.000 0.000 2.000 1000.000 1000.000 0.000 5.000 700.000 680.000 2.857 10.000 500.000 500.000 0.000 20.000 390.000 395.000 -1.282 50.000 220.000 225.000 -2.273 100.000 130.000 135.000 -3.846 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Switching Time CharacteristicCircuit Simulation result 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 1.5us 1.8us 2.1us 2.4us 2.7us 3.0us 3.3us V(2) V(3)/20 TimeEvaluation circuit L2 3 50n U1 R1 L1 2 RL 50 30nH 16 2SK1544 V1 = 0 V2 = 20 V2 R2 TD = 2u VDD TR = 6n 50 200Vdc TF = 7n PW = 100u PER = 200u 0Simulation Result ID=25A, VDD=200V Measurement Simulation Error(%) VGS=0/10V ton 240.000 ns 240.750 ns 0.313 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Output CharacteristicCircuit Simulation result 50A 40A 15 10 30A 6.0V 5.5V 20A 5.0V 10A 4.5V 4.0V 0A 0V 20V 40V 60V 80V 100V 120V I(V3) V_V2 VGS=-3.8VEvaluation circuit V3 0Vdc U10 2SK1544 V1 V2 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 3.0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1Evaluation Circuit R1 0.01m U4 V1 2SK1544 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Comparison GraphCircuit Simulation ResultSimulation Result VDS(V) VDS(V) IDR(A) Measurement Simulation %Error 3.000 0.700 0.712 1.714 5.000 0.750 0.736 -1.867 10.000 0.790 0.782 -1.013 20.000 0.850 0.851 0.118 50.000 1.030 1.028 -0.194 100.00 1.320 1.298 -1.667 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 20us 22us 24us 26us 28us I(RL21) TimeEvaluation Circuit RL21 N07543 50 V1 = -9.40 V2 = 10.68 V21 U8 TD = 0.5u TF = 10n TR = 10n PW = 20u 2SK1544 PER = 50u 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 2.820 us 2.827 us 0.248 trb 720.000 ns 258.984 ns -64.030 trr 3.540 us 3.086 us -12.825 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
    • Reverse Recovery Characteristic ReferenceTrj=2.82(us)Trb=720(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006