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SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SJ683-TL-E (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SJ683-TL-E (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameters)PART NUMBER: 2SJ683-TL-EMANUFACTURER: SANYOBody Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
  • 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
  • 3. Transconductance CharacteristicCircuit Simulation ResultComparison table gfs(S) -Id(A) Error (%) Measurement Simulation 1 17.600 18.236 3.61 2 24.750 25.596 3.42 5 38.850 39.876 2.64 10 54.250 55.476 2.26 20 75.000 76.703 2.27 50 113.500 116.109 2.30 100 154.500 156.691 1.42 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
  • 4. Vgs-Id CharacteristicCircuit Simulation result -120A -100A -80A -60A -40A -20A 0A 0V -1.0V -2.0V -3.0V -4.0V I(V3) V_V1Evaluation circuit V3 0Vdc U1 2SJ683-TL-E V2 V1 -10 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
  • 5. Comparison GraphCircuit Simulation ResultSimulation Result -VGS(V) -ID(mA) Error (%) Measurement Simulation 1 2.350 2.350 0.00 2 2.400 2.395 -0.21 5 2.490 2.487 -0.12 10 2.595 2.592 -0.12 20 2.730 2.742 0.44 40 2.940 2.962 0.75 60 3.110 3.135 0.80 80 3.270 3.284 0.43 100 3.415 3.418 0.09 120 3.550 3.541 -0.25 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
  • 6. Rds(on) CharacteristicCircuit Simulation result -30A -24A -18A -12A -6A 0A 0V -30mV -60mV -90mV -150mV -210mV -265mV I(V3) V_VDSEvaluation circuit V3 0Vdc VDS U1 2SJ683-TL-E 0Vdc V1 -10 0Simulation Result ID= -33A, VGS= -10V Measurement Simulation Error (%) R DS (on) mΩ 8.000 7.989 -0.14 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
  • 7. Gate Charge CharacteristicCircuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 50n 100n 150n 200n 250n 300n V(W1:4) Time*1mAEvaluation circuit U1 2SJ683-TL-E ION = 0uA I2 I1 = 0 IOFF = 1mA D2 65 I2 = 1m W Dbreak TD = 0 I1 - TR = 5n + TF = 5n VDD PW = 600u W1 PER = 1000u -30 0Simulation Result VDD= -30V,ID= -65A Measurement Simulation Error (%) ,VGS= -10V Qgs nC 50.000 50.257 0.51 Qgd nC 50.000 50.437 0.87 Qg nC 290.000 192.240 -33.71 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
  • 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 0.0 1200.000 1198.000 -0.17 1.0 670.000 668.000 -0.30 2.0 498.000 502.000 0.80 5.0 320.000 323.000 0.94 10.0 225.000 223.000 -0.89 15.0 180.000 179.000 -0.56 20.0 152.000 153.000 0.66 25.0 135.000 134.000 -0.74 30.0 121.000 121.800 0.66 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
  • 9. Switching Time CharacteristicCircuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 4.0us 4.5us 5.0us 5.5us 6.0us 6.5us 7.0us 7.5us V(U1:G) V(U1:D)/3 TimeEvaluation circuit L2 RL 50nH 0.9 R1 L1 U1 2SJ683-TL-E VDD PER = 20u -30.5Vdc PW = 10u 30nH TF = 5n 50 R2 TR = 5n 50 TD = 5u V2 = 20 V2 V1 = 0 0Simulation Result ID= -33A, VDD= -30V Measurement Simulation Error(%) VGS=0/-10V td(on) ns 110.000 110.012 0.01 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
  • 10. Output CharacteristicCircuit Simulation result -130A -10 -120A -8 -6 -110A -4 -100A -90A -80A -70A -60A -50A VGS=-3V -40A -30A -20A -10A 0A 0V -0.2V -0.6V -1.0V -1.4V -1.8V I(V3) V_V2Evaluation circuit V3 0Vdc U1 2SJ683-TL-E V2 V1 -2 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
  • 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 10mA 1.0mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(Vsense) V_VSDEvaluation Circuit Vsense 0Vdc U1 VSD 2SJ683-TL-E 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
  • 12. Comparison GraphCircuit Simulation ResultSimulation Result VSD (-V) IDR(-A) %Error Measurement Simulation 0.001 0.470 0.468 -0.43 0.001 0.527 0.528 0.19 0.100 0.588 0.589 0.17 1.000 0.657 0.655 -0.30 2.000 0.682 0.679 -0.38 5.000 0.720 0.719 -0.14 10.000 0.755 0.756 0.13 20.000 0.800 0.799 -0.13 50.000 0.870 0.872 0.23 100.000 0.950 0.949 -0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
  • 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 8.4us 9.2us 10.0us 10.8us 11.6us 12.4us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V2 = 10.6v V1 TD = 20ns U1 TR = 10ns 2SJ683-TL-E TF = 10ns PW = 1us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 60.000 60.808 1.35 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
  • 14. Reverse Recovery Characteristic Reference MeasurementTrj= 60.00 (ns)Trb=160.00 (ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
  • 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -8mA -6mA -4mA -2mA 0A 0V -10V -20V -30V -40V -50V I(R1) V_V1Evaluation Circuit R1 0.001m V1 0Vdc U1 2SJ683-TL-E R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15
  • 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16

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