SPICE MODEL of 2SJ657 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SJ657 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SJ657 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SJ657 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SJ657 (Standard+BDS Model) in SPICE PARK SPICE MODEL of 2SJ657 (Standard+BDS Model) in SPICE PARK Document Transcript

  • Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameters)PART NUMBER: 2SJ657MANUFACTURER: SANYOBody Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
  • MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
  • Transconductance CharacteristicCircuit Simulation ResultComparison table gfs(S) -Id(A) Error (%) Measurement Simulation 1 10.850 11.282 3.98 2 14.800 15.243 2.99 5 21.700 22.139 2.02 10 28.250 28.683 1.53 20 35.800 36.253 1.27 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
  • Vgs-Id CharacteristicCircuit Simulation result -50A -40A -30A -20A -10A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1Evaluation circuit V3 0Vdc V2 U1 -10 V1 2SJ657 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
  • Comparison GraphCircuit Simulation ResultSimulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 1 2.600 2.616 0.62 2 2.700 2.691 -0.33 5 2.850 2.851 0.04 10 3.050 3.046 -0.13 20 3.350 3.352 0.06 50 4.100 4.062 -0.93 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
  • Rds(on) CharacteristicCircuit Simulation result -16A -14A -12A -10A -8A -6A -4A -2A 0A 0V -100mV -200mV -300mV -400mV -500mV -600mV I(V3) V_VDSEvaluation circuit V3 0Vdc VDS U1 2SJ657 0Vdc V1 -10 0Simulation Result ID= -13A, VGS= -10V Measurement Simulation Error (%) R DS (on) mΩ 39.000 39.000 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
  • Gate Charge CharacteristicCircuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n 90n 100n V(W1:4) Time*1mAEvaluation circuit U1 I2 2SJ657 D2 25 I1 = 0 ION = 0uA Dbreak I2 = 1m IOFF = 1mA TD = 0 I1 W TR = 5n - VDD TF = 5n + PW = 600u PER = 1000u W1 -50 0Simulation Result VDD= -50V,ID= -25A Measurement Simulation Error (%) ,VGS= -10V Qgs nC 20.000 20.065 0.33 Qgd nC 20.000 20.031 0.15 Qg nC 110.000 82.018 -25.44 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
  • Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 0.0 1030.000 1035.000 0.49 1.0 780.000 770.000 -1.28 2.0 615.000 620.000 0.81 5.0 412.000 416.000 0.97 10.0 285.000 287.000 0.70 15.0 220.000 223.000 1.36 20.0 190.000 188.000 -1.05 25.0 165.000 163.000 -1.21 30.0 155.000 152.000 -1.94 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
  • Switching Time CharacteristicCircuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 0.6us 0.9us 1.2us 1.5us 1.8us V(U1:G) V(U1:D)/5 TimeEvaluation circuit L2 RL 50nH 3.85 R1 L1 U1 PER = 20u 2SJ657 PW = 10u 30nH VDD TF = 5n 50 R2 -50Vdc TR = 5n 50 TD = 1u V2 = 20 V2 V1 = 0 0Simulation Result ID= -13A, VDD= -50V Measurement Simulation Error(%) VGS=0/-10V td(on) ns 47.000 47.050 0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
  • Output CharacteristicCircuit Simulation result -50A -10 -6 -4 -40A -30A -20A -10A VGS=-3V 0A 0V -0.5V -1.5V -2.5V -3.5V -4.5V I(V3) V_V2Evaluation circuit V3 0Vdc U1 V2 2SJ657 V1 -5 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
  • BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 10A 1.0A 100mA 10mA 1.0mA 0.3V 0.6V 0.9V 1.2V I(Vsense) V_VSDEvaluation Circuit Vsense 0Vdc U1 VSD 2SJ657 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
  • Comparison GraphCircuit Simulation ResultSimulation Result VSD (-V) IDR(-A) %Error Measurement Simulation 0.001 0.492 0.489 -0.61 0.01 0.553 0.554 0.18 0.100 0.617 0.619 0.32 1.000 0.697 0.693 -0.57 2.000 0.723 0.721 -0.28 5.000 0.770 0.772 0.26 10.000 0.825 0.825 0.00 20.000 0.900 0.899 -0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
  • Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 10.2us 10.6us 11.0us 11.4us 11.8us 12.2us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V2 = 10.6v V1 TD = 1.05us U1 TR = 10ns 2SJ657 TF = 10ns PW = 10us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 53.000 53.358 0.68 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
  • Reverse Recovery Characteristic Reference MeasurementTrj= 53.00 (ns)Trb= 84.00 (ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
  • ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -8mA -6mA -4mA -2mA 0A 0V -10V -20V -30V -40V -50V I(R1) V_V1Evaluation Circuit R1 0.001m V1 0Vdc R2 U1 2SJ657 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15
  • Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16