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SPICE MODEL of 2SJ656 (Standard+BDS Model) in SPICE PARK
 

SPICE MODEL of 2SJ656 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SJ656 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SJ656 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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    SPICE MODEL of 2SJ656 (Standard+BDS Model) in SPICE PARK SPICE MODEL of 2SJ656 (Standard+BDS Model) in SPICE PARK Document Transcript

    • Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameters)PART NUMBER: 2SJ656MANUFACTURER: SANYOBody Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 1
    • MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 2
    • Transconductance CharacteristicCircuit Simulation Result 40 Measurement Simulation 30 20 gfs(S) 10 0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Drain Current ID (-A)Comparison table gfs(S) -Id(A) Error (%) Measurement Simulation 1 7.500 7.721 2.94 2 10.400 10.580 1.73 5 15.500 15.757 1.66 10 21.000 20.925 -0.36 20 27.500 27.236 -0.96 30 31.600 31.417 -0.58 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 3
    • Vgs-Id CharacteristicCircuit Simulation result -40A -30A -20A -10A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1Evaluation circuit V3 0Vdc U1 V2 2SJ656 -10 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 4
    • Comparison GraphCircuit Simulation Result 40.00 Measurement Simulation 30.00 Drain Current ID (-A) 20.00 10.00 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Gate - Source Voltage VGS (-V)Simulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 1 2.550 2.539 -0.42 2 2.650 2.648 -0.06 5 2.900 2.875 -0.87 10 3.150 3.146 -0.12 20 3.550 3.559 0.26 30 3.900 3.900 -0.01 40 4.200 4.202 0.05 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 5
    • Rds(on) CharacteristicCircuit Simulation result -9.0A -8.0A -7.0A -6.0A -5.0A -4.0A -3.0A -2.0A -1.0A 0A 0V -90mV -180mV -270mV -360mV -450mV -540mV I(V3) V_VDSEvaluation circuit V3 0Vdc VDS U1 2SJ656 0Vdc V1 -10 0Simulation Result ID=--9A, VGS=-10V Measurement Simulation Error (%) R DS (on) mΩ 58.000 58.000 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 6
    • Gate Charge CharacteristicCircuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n V(W1:4) Time*1mAEvaluation circuit U1 2SJ656 ION = 0uA I2 I1 = 0 IOFF = 1mA D2 18 I2 = 1m W Dbreak TD = 0 I1 - TR = 5n + TF = 5n VDD PW = 600u W1 PER = 1000u -50 0Simulation Result VDD=-50V,ID=-18A Measurement Simulation Error (%) ,VGS=-10V Qgs nC 12.800 12.797 -0.02 Qgd nC 14.700 14.755 0.37 Qg nC 74.000 54.341 -26.57 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 7
    • Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 0 420.000 420.000 0.000 5 132.000 131.750 -0.189 10 89.000 89.765 0.860 15 71.000 70.860 -0.197 20 60.000 59.700 -0.500 25 53.000 52.185 -1.538 30 46.000 46.716 1.557 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 8
    • Switching Time CharacteristicCircuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us V(U1:G) V(U1:D)/5 TimeEvaluation circuit L2 RL 50nH 5.56 R1 L1 U1 2SJ656 PER = 20u VDD PW = 10u 30nH -50.6Vdc TF = 5n 50 R2 TR = 5n 50 TD = 1u V2 = 20 V2 V1 = 0 0Simulation Result ID=-9A, VDD=-50V Measurement Simulation Error(%) VGS=0/-10V td(on) ns 30.000 30.013 0.04 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 9
    • Output CharacteristicCircuit Simulation result -40A -10 -6 -4 -30A -20A -10A VGS=-3V 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V I(V3) V_V2Evaluation circuit V3 0Vdc U1 V2 2SJ656 -5 V1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 10
    • BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 10mA 1.0mA 0V 0.3V 0.6V 0.9V 1.2V 1.5V I(Vsense) V_VDSEvaluation Circuit Vsense 0Vdc U1 VDS 2SJ656 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 11
    • Comparison GraphCircuit Simulation Result Measurement Simulation 10.00 Drain reverse current IDR (-A) 1.00 0.10 0.01 0.00 0 0.3 0.6 0.9 1.2 1.5 Source - Drain voltage VSD (-V)Simulation Result VSD(-V) IDR(-A) %Error Measurement Simulation 0.001 0.5050 0.5055 0.10 0.01 0.5650 0.5641 -0.16 0.1 0.6250 0.6246 -0.07 1 0.7050 0.7025 -0.36 2 0.7350 0.7372 0.29 5 0.7950 0.7952 0.02 10 0.8550 0.8527 -0.27 20 0.9300 0.9331 0.33 40 1.0600 1.0590 -0.09 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 12
    • Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.2us 0.6us 1.0us 1.4us 1.8us 2.2us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V1 U1 V2 = 10.6v 2SJ656 TD = 90ns TR = 10ns TF = 10ns PW = 1us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 40.000 40.135 0.34 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 13
    • Reverse Recovery Characteristic Reference MeasurementTrj=40.00(ns)Trb=60.00(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 14
    • ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -8mA -6mA -4mA -2mA 0A 0V -10V -20V -30V -40V -50V I(R1) V_V1Evaluation Circuit R1 0.001m V1 U1 2SJ656 0Vdc R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 15
    • Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 16