Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameters)PART NUMBER: 2SJ655MANUFACTURER: SANYOBody Diode (Model P...
MOSFET MODEL PSpice model                                         Model description  parameter    LEVEL       L        Cha...
Transconductance CharacteristicCircuit Simulation ResultComparison table                                         gfs(S)   ...
Vgs-Id CharacteristicCircuit Simulation result           -25A           -20A           -15A           -10A            -5A ...
Comparison GraphCircuit Simulation ResultSimulation Result                                          -VGS(V)        -ID(A) ...
Rds(on) CharacteristicCircuit Simulation result           -8.0A           -6.0A           -4.0A           -2.0A           ...
Gate Charge CharacteristicCircuit Simulation result            -10V             -9V             -8V             -7V       ...
Capacitance Characteristic                                                              Measurement                       ...
Switching Time CharacteristicCircuit Simulation result          -14V          -12V          -10V           -8V           -...
Output CharacteristicCircuit Simulation result           -25A                                                -10          ...
BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result             10A            1.0A           10...
Comparison GraphCircuit Simulation ResultSimulation Result                                     VSD (-V)            IDR(-A)...
Reverse Recovery CharacteristicCircuit Simulation Result            400mA            300mA            200mA            100...
Reverse Recovery Characteristic                                        Reference                                          ...
ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result            -10mA             -8mA   ...
Zener Voltage Characteristic                                         Reference            All Rights Reserved Copyright (c...
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SPICE MODEL of 2SJ655 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SJ655 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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Transcript of "SPICE MODEL of 2SJ655 (Standard+BDS Model) in SPICE PARK"

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameters)PART NUMBER: 2SJ655MANUFACTURER: SANYOBody Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
  2. 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
  3. 3. Transconductance CharacteristicCircuit Simulation ResultComparison table gfs(S) -Id(A) Error (%) Measurement Simulation 1 6.000 6.188 3.13 2 8.300 8.533 2.81 5 12.500 12.853 2.82 10 17.000 17.254 1.49 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
  4. 4. Vgs-Id CharacteristicCircuit Simulation result -25A -20A -15A -10A -5A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1Evaluation circuit V3 0Vdc V2 U1 -10 V1 2SJ655 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
  5. 5. Comparison GraphCircuit Simulation ResultSimulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 1 2.475 2.495 0.81 2 2.650 2.631 -0.72 5 2.920 2.910 -0.34 10 3.260 3.241 -0.58 15 3.525 3.506 -0.54 20 3.765 3.738 -0.72 25 3.980 3.948 -0.80 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
  6. 6. Rds(on) CharacteristicCircuit Simulation result -8.0A -6.0A -4.0A -2.0A 0A 0V -200mV -400mV -600mV -800mV I(V3) V_VDSEvaluation circuit V3 0Vdc VDS U1 2SJ655 0Vdc V1 -10 0Simulation Result ID= -6A, VGS= -10V Measurement Simulation Error (%) R DS (on) mΩ 100.000 100.581 0.58 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
  7. 7. Gate Charge CharacteristicCircuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 5n 10n 15n 20n 25n 30n 35n 40n 45n V(W1:4) Time*1mAEvaluation circuit U1 I2 2SJ655 D2 12 I1 = 0 ION = 0uA Dbreak I2 = 1m IOFF = 1mA TD = 0 I1 W TR = 5n - VDD TF = 5n + PW = 600u PER = 1000u W1 -50 0Simulation Result VDD= -50V,ID= -12A Measurement Simulation Error (%) ,VGS= -10V Qgs nC 7.000 7.008 0.11 Qgd nC 9.000 9.055 0.61 Qg nC 41.000 33.459 -18.39 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 1.0 220.000 221.000 0.45 2.0 175.000 174.000 -0.57 5.0 114.000 115.000 0.88 10.0 78.000 79.000 1.28 15.0 62.500 62.000 -0.80 20.0 52.000 52.500 0.96 25.0 45.000 45.800 1.78 30.0 42.000 41.200 -1.90 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
  9. 9. Switching Time CharacteristicCircuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us V(U1:G) V(U1:D)/5 TimeEvaluation circuit L2 RL 50nH 8.33 R1 L1 U1 PER = 20u 2SJ655 PW = 10u 30nH VDD TF = 5n 50 R2 -50Vdc TR = 5n 50 TD = 1u V2 = 20 V2 V1 = 0 0Simulation Result ID= -6A, VDD= -50V Measurement Simulation Error(%) VGS=0/-10V td(on) ns 17.000 17.082 0.48 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
  10. 10. Output CharacteristicCircuit Simulation result -25A -10 -6 -4 -8 -20A -15A -10A VGS=-3V -5A 0A 0V -0.5V -1.5V -2.5V -3.5V -4.5V I(V3) V_V2Evaluation circuit V3 0Vdc U1 V2 2SJ655 V1 -5 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
  11. 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 10A 1.0A 100mA 10mA 1.0mA 0.3V 0.6V 0.9V 1.2V I(Vsense) V_VSDEvaluation Circuit Vsense 0Vdc U1 VSD 2SJ655 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
  12. 12. Comparison GraphCircuit Simulation ResultSimulation Result VSD (-V) IDR(-A) %Error Measurement Simulation 0.001 0.514 0.514 0.02 0.010 0.580 0.579 -0.17 0.100 0.645 0.646 0.16 1.000 0.720 0.721 0.14 2.000 0.750 0.750 0.04 5.000 0.800 0.804 0.50 10.000 0.870 0.865 -0.57 20.000 0.950 0.952 0.21 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 10.2us 10.6us 11.0us 11.4us 11.8us 12.2us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V2 = 10.6v V1 TD = 1.12us U1 TR = 10ns 2SJ655 TF = 10ns PW = 10us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 40.000 40.487 1.22 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
  14. 14. Reverse Recovery Characteristic Reference MeasurementTrj= 40.00 (ns)Trb= 30.00 (ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -8mA -6mA -4mA -2mA 0A 0V -10V -20V -30V -40V -50V I(R1) V_V1Evaluation Circuit R1 0.001m V1 0Vdc R2 U1 2SJ655 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16

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