Device Modeling ReportCOMPONENTS: Power MOSFET (Professional Model)PART NUMBER: 2SJ652MANUFACTURER: SANYOBody Diode (Profe...
MOSFET MODEL PSpice model                                         Model description  parameter    LEVEL       L        Cha...
Transconductance CharacteristicCircuit Simulation Result                45                               Measurement      ...
Vgs-Id CharacteristicCircuit Simulation result          -50A          -40A          -30A          -20A          -10A      ...
Comparison GraphCircuit Simulation ResultSimulation Result                                          -VGS(V)        -ID(A) ...
Rds(on) CharacteristicCircuit Simulation result          -14A          -13A          -12A          -11A          -10A     ...
Gate Charge CharacteristicCircuit Simulation result         -10V          -9V          -8V          -7V          -6V      ...
Capacitance Characteristic                                                              Measurement                       ...
Switching Time CharacteristicCircuit Simulation result         -14V         -12V         -10V          -8V          -6V   ...
Output CharacteristicCircuit Simulation result       -50A                                                                 ...
BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result             70A             10A            1...
Comparison GraphCircuit Simulation Result                                                           Measurement           ...
Reverse Recovery CharacteristicCircuit Simulation Result         400mA         300mA         200mA         100mA          ...
Reverse Recovery Characteristic                                        Reference                                          ...
ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result         -10mA          -8mA         ...
Zener Voltage Characteristic                                         Reference            All Rights Reserved Copyright (c...
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SPICE MODEL of 2SJ652 (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of 2SJ652 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SJ652 (Professional+BDP Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Professional Model)PART NUMBER: 2SJ652MANUFACTURER: SANYOBody Diode (Professional Model) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
  2. 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
  3. 3. Transconductance CharacteristicCircuit Simulation Result 45 Measurement 40 Simulation 35 30 25 gfs(S) 20 15 10 5 0 0.0 10.0 20.0 30.0 40.0 50.0 Drain Current ID (-A)Comparison table gfs(S) -Id(A) Error (%) Measurement Simulation 1.0000 9.000 9.414 4.60 2.0000 12.500 12.814 2.51 5.0000 18.600 18.856 1.38 10.0000 25.400 24.736 -2.61 20.0000 32.200 31.729 -1.46 50.0000 41.500 42.343 2.03 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
  4. 4. Vgs-Id CharacteristicCircuit Simulation result -50A -40A -30A -20A -10A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1Evaluation circuit V3 0Vdc V2 U1 2SJ652 -10 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
  5. 5. Comparison GraphCircuit Simulation ResultSimulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 1 2.450 2.421 -1.20 2 2.550 2.510 -1.56 5 2.700 2.698 -0.06 10 2.900 2.927 0.92 20 3.250 3.279 0.89 50 4.100 4.079 -0.51 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
  6. 6. Rds(on) CharacteristicCircuit Simulation result -14A -13A -12A -11A -10A -9A -8A -7A -6A -5A -4A -3A -2A -1A 0A 0V -100mV -200mV -300mV -400mV I(V3) V_VDSEvaluation circuit V3 0Vdc VDS U1 0Vdc 2SJ652 V1 -10 0Simulation Result ID=-14A, VGS=-10V Measurement Simulation Error (%) R DS (on) mΩ 28.500 28.500 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
  7. 7. Gate Charge CharacteristicCircuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n V(W1:4) Time*1mAEvaluation circuit U1 ION = 0uA 2SJ652 I2 I1 = 0 IOFF = 1mA D2 28 I2 = 1m W Dbreak TD = 0 I1 - TR = 5n + TF = 5n VDD PW = 600u W1 PER = 1000u -30 0Simulation Result VDD=-30V,ID=-28A Measurement Simulation Error (%) ,VGS=-10V Qgs nC 15.000 14.915 -0.57 Qgd nC 12.000 12.078 0.65 Qg nC 80.000 79.840 -0.20 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 0 810.000 810.000 0.000 5 280.000 279.250 -0.268 10 195.000 196.900 0.974 15 160.000 158.800 -0.750 20 135.000 135.900 0.667 25 120.000 120.265 0.221 30 110.000 108.755 -1.132 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
  9. 9. Switching Time CharacteristicCircuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us V(U1:G) V(U1:D)/3 TimeEvaluation circuit L2 RL 50nH 2.1 R1 L1 U1 PER = 20u 2SJ652 VDD PW = 10u 30nH -30Vdc TF = 5n 50 R2 TR = 5n 50 TD = 1u V2 = 20 V2 V1 = 0 0Simulation Result ID=-14A, VDD=-30V Measurement Simulation Error(%) VGS=0/-10V td(on) ns 33.000 32.876 -0.38 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
  10. 10. Output CharacteristicCircuit Simulation result -50A -4 -10 -6 -40A -30A -20A VGS=-3V -10A 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V I(V3) V_V2Evaluation circuit V3 0Vdc V2 U1 2SJ652 -5 V1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
  11. 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 70A 10A 1.0A 100mA 10mA 1.0mA 0V 0.3V 0.6V 0.9V 1.2V 1.5V I(Vsense) V_VDSEvaluation Circuit Vsense 0Vdc VDS U1 2SJ652 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
  12. 12. Comparison GraphCircuit Simulation Result Measurement Simulation 10.000 Drain reverse current IDR (-A) 1.000 0.100 0.010 0.001 0 0.3 0.6 0.9 1.2 1.5 Source - Drain voltage VSD (-V)Simulation Result VSD(-V) IDR(-A) %Error Measurement Simulation 0.001 0.5000 0.4973 -0.53 0.01 0.5600 0.5595 -0.08 0.1 0.6200 0.6223 0.38 1 0.6950 0.6913 -0.53 2 0.7200 0.7176 -0.33 5 0.7600 0.7641 0.54 10 0.8150 0.8150 0.00 20 0.8900 0.8882 -0.20 50 1.0500 1.0505 0.05 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.2us 0.6us 1.0us 1.4us 1.8us 2.2us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.6v U1 TD = 90ns D2SJ652_P TR = 10ns TF = 10ns PW = 1us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 28.000 27.853 -0.52 trb ns 72.000 72.138 0.19 trr ns 100.000 99.991 -0.01 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
  14. 14. Reverse Recovery Characteristic Reference MeasurementTrj=28.00(ns)Trb=72.00(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -8mA -6mA -4mA -2mA 0A 0V -10V -20V -30V -40V -50V I(R1) V_V1Evaluation Circuit R1 0.001m V1 U1 2SJ652 0Vdc R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16

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