SPICE MODEL of 2SJ651 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SJ651 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SJ651 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SJ651 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SJ651 (Standard+BDS Model) in SPICE PARK SPICE MODEL of 2SJ651 (Standard+BDS Model) in SPICE PARK Document Transcript

  • Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameters)PART NUMBER: 2SJ651MANUFACTURER: SANYOBody Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
  • MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
  • Transconductance CharacteristicCircuit Simulation ResultComparison table gfs(S) -Id(A) Error (%) Measurement Simulation 1 6.250 6.485 3.76 2 8.750 8.932 2.08 5 13.250 13.423 1.31 10 17.750 17.984 1.32 20 23.400 23.670 1.15 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
  • Vgs-Id CharacteristicCircuit Simulation result -40A -35A -30A -25A -20A -15A -10A -5A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1Evaluation circuit V3 0Vdc U1 V2 2SJ651 V1 -10 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
  • Comparison GraphCircuit Simulation ResultSimulation Result -VGS(V) -ID(mA) Error (%) Measurement Simulation 1 2.430 2.415 -0.62 2 2.570 2.545 -0.97 5 2.840 2.812 -0.99 10 3.170 3.129 -1.29 20 3.675 3.607 -1.85 30 4.075 3.997 -1.91 40 4.450 4.341 -2.45 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
  • Rds(on) CharacteristicCircuit Simulation result -10A -9A -8A -7A -6A -5A -4A -3A -2A -1A 0A 0V -50mV -150mV -250mV -350mV -450mV I(V3) V_VDSEvaluation circuit V3 0Vdc VDS U1 2SJ651 0Vdc V1 -10 0Simulation Result ID= -10A, VGS= -10V Measurement Simulation Error (%) R DS (on) mΩ 45.000 45.000 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
  • Gate Charge CharacteristicCircuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 5n 10n 15n 20n 25n 30n 35n 40n 45n V(W1:4) Time*1mAEvaluation circuit U1 ION = 0uA 2SJ651 I2 I1 = 0 IOFF = 1mA D2 20 I2 = 1m W Dbreak TD = 0 I1 - TR = 5n + TF = 5n VDD PW = 600u W1 PER = 1000u -30 0Simulation Result VDD= -30V,ID= -20A Measurement Simulation Error (%) ,VGS= -10V Qgs nC 7.400 7.440 0.54 Qgd nC 9.000 9.094 1.04 Qg nC 45.000 31.741 -29.46 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
  • Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 1.0 230.000 230.000 0.00 2.0 183.000 182.700 -0.16 5.0 120.000 121.000 0.83 10.0 83.000 82.500 -0.60 15.0 65.000 65.600 0.92 20.0 55.000 54.750 -0.45 25.0 47.000 47.400 0.85 30.0 42.000 42.400 0.95 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
  • Switching Time CharacteristicCircuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us V(U1:G) V(U1:D)/3 TimeEvaluation circuit L2 RL 50nH 3 R1 L1 U1 VDD PER = 20u 2SJ651 -30.5Vdc PW = 10u 30nH TF = 5n 50 R2 TR = 5n 50 TD = 1u V2 = 20 V2 V1 = 0 0Simulation Result ID= -10A, VDD= -30V Measurement Simulation Error(%) VGS=0/-10V td(on) ns 18.000 18.013 0.07 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
  • Output CharacteristicCircuit Simulation result -50A -45A -10 -8 -6 -40A -35A -4 -30A -25A -20A -15A -10A VGS=-3V -5A 0A 0V -0.5V -1.5V -2.5V -3.5V -4.5V I(V3) V_V2Evaluation circuit V3 0Vdc U1 V2 2SJ651 V1 -5 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
  • BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 0V 0.3V 0.6V 0.9V 1.2V 1.5V I(Vsense) V_VSDEvaluation Circuit Vsense 0Vdc VSD U1 2SJ651 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
  • Comparison GraphCircuit Simulation ResultSimulation Result VSD (-V) IDR(-A) %Error Measurement Simulation 0.01 0.575 0.576 0.17 0.02 0.598 0.597 -0.17 0.05 0.625 0.626 0.10 0.10 0.648 0.647 -0.15 0.20 0.671 0.669 -0.30 0.50 0.700 0.699 -0.14 1.00 0.723 0.724 0.14 2.00 0.750 0.752 0.27 5.00 0.805 0.803 -0.25 10.00 0.860 0.860 0.05 20.00 0.950 0.949 -0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
  • Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V2 = 10.6v V1 TD = 20ns U1 TR = 10ns 2SJ651 TF = 10ns PW = 1us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 26.000 26.417 1.60 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
  • Reverse Recovery Characteristic Reference MeasurementTrj= 26.00 (ns)Trb= 44.00 (ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
  • ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -8mA -6mA -4mA -2mA 0A 0V -10V -20V -30V -40V -50V I(R1) V_V1Evaluation Circuit R1 0.001m V1 0Vdc U1 2SJ651 R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15
  • Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16