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SPICE MODEL of 2SJ438 (Standard+BDS Model) in SPICE PARK
 

SPICE MODEL of 2SJ438 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SJ438 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SJ438 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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    SPICE MODEL of 2SJ438 (Standard+BDS Model) in SPICE PARK SPICE MODEL of 2SJ438 (Standard+BDS Model) in SPICE PARK Document Transcript

    • Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: 2SJ438MANUFACTURER: TOSHIBAREMARK: P Channel ModelBody Diode(Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Transconductance CharacteristicCircuit Simulation ResultComparison table gfs Id(A) Error(%) Measurement Simulation -0.100 0.670 0.680 1.493 -0.200 1.150 1.200 4.348 -0.500 1.800 1.890 5.000 -1.000 2.800 2.740 -2.143 -2.000 3.800 3.750 -1.316 -5.000 5.750 5.800 0.870 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Vgs-Id CharacteristicCircuit Simulation result -10A -8A -6A -4A -2A 0A 0V -2V -4V -6V -8V -10V I(V3) V_V1Evaluation circuit V3 0Vdc U7 2SJ438 V1 V2 0 10 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation -1.000 -2.550 -2.540 -0.392 -2.000 -2.850 -2.853 0.105 -4.000 -3.300 -3.302 0.061 -6.000 -3.700 -3.653 -1.270 -8.000 -4.000 -3.949 -1.275 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Rds(on) CharacteristicCircuit Simulation result -3.0A -2.0A -1.0A 0A 0V -0.5V -1.0V I(V2) V_VDSEvaluation circuit V2 0Vdc U7 2SJ438 VDS 0Vdc VGS -10Vdc 0Simulation Result ID=-2.5A, VGS=-10V Measurement Simulation Error (%) R DS (on) 160.000 m 160.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Gate Charge CharacteristicCircuit Simulation result 20V 16V 12V 8V 4V 0V 0 8n 16n 24n 32n 40n -V(W1:4) Time*1mAEvaluation circuit ION = 0uA IOFF = 1mA W I2 - U10 D2 + Dbreak 5 I1 = 0 2SJ438 W1 I1 I2 = 1m TD = 0 TR = 10n TF = 10n V1 PW = 600u PER = 1000u 48 0Simulation Result VDD=-48V,ID=-5A Measurement Simulation Error (%) ,VGS=-10V Qgs 4.500 nC 4.639 nC 3.089 Qgd 6.000 nC 5.810 nC -3.167 Qg 22.000 nC 21.351 nC -2.950 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 900.000 905.000 0.556 0.200 820.000 822.000 0.244 0.500 650.000 656.000 0.923 1.000 515.000 518.000 0.583 2.000 390.000 393.000 0.769 5.000 260.000 261.000 0.385 10.000 176.000 180.000 2.273 20.000 133.000 132.000 -0.752 50.000 90.000 87.500 -2.778 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Switching Time CharacteristicCircuit Simulation result -13V -10V -5V 0V 1.95us 2.00us 2.05us 2.10us V(2) V(3)/3 TimeEvaluation circuit L2 R2 50nH 11.8 RG L1 U7 PER = 2000u 30nH PW = 10u 2SJ438 V1 TF = 7n 4.7 TR = 6n 30Vdc R1 TD = 2u V2 = 20 V2 4.7 V1 = 0 0Simulation Result ID=-2.5A, VDD=-30V Measurement Simulation Error(%) VGS=0/10V ton 45.000 ns 59.126 ns 31.391 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Output CharacteristicCircuit Simulation result -10A -10.0V -6.0V -8A -8.0V -6A -3.5V -4A -3V -2A -2.5V VGS=-2.0V 0A 0V -2V -4V -6V -8V -10V I(V3) V_V2Evaluation circuit V3 0Vdc U8 2SJ438 V2 V1 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1Evaluation Circuit R1 0.01m V1 0Vdc U9 2SJ438 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Comparison GraphCircuit Simulation ResultSimulation Result VDS(V) VDS(V) IDR(A) Measurement Simulation %Error 0.100 0.650 0.650 0.000 0.200 0.680 0.682 0.294 0.500 0.730 0.734 0.548 1.000 0.780 0.778 -0.256 2.000 0.830 0.830 0.000 5.000 0.930 0.929 -0.108 10.000 1.050 1.051 0.095 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 14.6us 14.8us 15.0us 15.2us 15.4us 15.6us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.6v U10 TD = 0 2SJ438 TR = 10ns TF = 10ns PW = 1us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 44.000 ns 43.672 ns -0.745 trb 72.000 ns 49.633 ns -31.065 trr 116.000 ns 93.305 ns -19.565 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Reverse Recovery Characteristic ReferenceTrj=44(ns)Trb=72(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA 0A 0V -5V -10V -15V -20V -25V -30V -35V -40V -45V I(R1) V_V1Evaluation Circuit R1 0.01m Open V1 0Vdc Ropen Open 10G U21 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005