SPICE MODEL of 2SD2623 in SPICE PARK

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SPICE MODEL of 2SD2623 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SD2623 in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: BIPOLAR JUNCTION TRANSISTORPART NUMBER: 2SD2623MANUFACTURER: PANASONIC Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 1
  2. 2. SPICE MODEL Q1 Q2SD2623 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 2
  3. 3. BJT SPICE Model Parameters PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient Coefficient for Onset of Forward-bias Depletion FC Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 3
  4. 4. ReverseReverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 4
  5. 5. Reverse DC Beta Characteristic (IE vs. hFE) Measurement Simulation Emitter Current (A) All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 5
  6. 6. ForwardForward Early Voltage Characteristic Collector current IC (A) Collector-emitter voltage VCE (V) Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 6
  7. 7. C-B Capacitance Characteristics Measurement Simulation REVERSE VOLTAGE VR (V)E-B Capacitance Characteristics Measurement Simulation REVERSE VOLTAGE VR (V) All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 7
  8. 8. Transistor hFE-IC CharacteristicsSimulation result 600 480 360 240 120 0 10mA 100mA 1.0A IC(Q1)/ IB(Q1) IC(Q1)Evaluation circuit Q1 Q2SD2623 V1 2V I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 8
  9. 9. Comparison GraphSimulation result 600 Measurement Simulation 480 Forward current transf er ratio hFE 360 240 120 0 10 100 1000 COLLECTOR CURRENT IC (mA)Comparison table hFE IC (mA) %Error Measurement Simulation 10 354.00 347.19 -1.92 20 365.00 366.22 0.33 50 379.00 385.23 1.64 100 387.00 391.37 1.13 200 383.00 384.03 0.27 300 373.00 369.07 -1.05 400 358.00 351.21 -1.90 500 337.00 331.86 -1.53 700 290.00 290.92 0.32 1000 220.00 227.55 3.43 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 9
  10. 10. VCE(Sat)-IC CharacteristicsSimulation result 1.0V 100mV 10mV 1.0mV 100uA 1.0mA 10mA 100mA 1.0A V(Q1:c) IC(Q1)Evaluation circuit VC Q1 Q2SD2623 F1 F I1 10 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 10
  11. 11. Comparison GraphSimulation result 1 Measurement Simulation COLLECTOR−EMITTE R SATURATION VOLTAGE, VCE (sat) (V) 0.1 0.01 0.001 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA)Comparison table VCE(sat) (V) IC (mA) %Error Measurement Simulation 0.1 0.0174 0.0174 0.00 0.2 0.0167 0.0165 -1.20 0.5 0.0161 0.0158 -1.86 1.0 0.01570 0.0155 -1.27 2.0 0.01540 0.01550 0.65 5.0 0.01570 0.01610 2.55 10 0.01700 0.01770 4.12 20 0.02000 0.02090 4.50 50 0.03000 0.03075 2.50 100 0.04800 0.04700 -2.08 200 0.07700 0.07880 2.34 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 11
  12. 12. VBE(Sat)-IC CharacteristicsSimulation result 10V 1.0V 100mV 10mV 1.0uA 10uA 100uA 1.0mA 10mA 100mA V(Q1:b) IC(Q1)Evaluation circuit VC Q1 Q2SD2623 F1 F I1 10 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 12
  13. 13. Comparison GraphSimulation result 10 Measurement BASE−EMITTER SATURATION VOLTAGE Simulation 1 VBE (sat) (V) 0.1 0.01 0.001 0.01 0.1 1 10 100 COLLECTOR CURRENT IC (mA)Comparison table VBE(sat) (V) IC (mA) %Error Measurement Simulation 0.001 0.440 0.434 -1.36 0.01 0.500 0.500 0.00 0.1 0.560 0.564 0.71 1.0 0.625 0.626 0.16 10.0 0.700 0.693 -1.00 100.0 0.800 0.809 1.13 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 13
  14. 14. Switching CharacteristicsSimulation result 1.2V 12V 1 2 1.0V 10V 0.8V 8V 0.6V 6V 0.4V 4V 0.2V 2V 0V 0V -0.2V -2V >> -0.4V -4V 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us 1 V(Q1:B) 2 V(Q1:C) TimeEvaluation circuit L1 2 1 50nH Rin L2 in 1 2 Q1 Q2SD2623 RL 300 30nH 200 Rgen V1 = 0 50 V2 = 5 TD = 1.01u VCC TR = 150ns V1 TF = 150ns 10V PW = 20us PER = 50us 0Comparison table Parameter Measurement Simulation %Error tr (ns) 42.000 42.284 0.68 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 14
  15. 15. Output CharacteristicsSimulation result IB=4.0mA 3.5mA 2.5mA 3.0mA 800mA 2.0mA 600mA 1.5mA 1.0mA 400mA 0.5mA 200mA 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V IC(Q1) V_V1Evaluation circuit V1 Q1 Q2SD2623 5Vdc I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 15
  16. 16. Output Characteristics Reference Collector current IC (A) Collector-emitter voltage VCE (V) All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 16

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