SPICE MODEL of 2SC6078 in SPICE PARK

  • 295 views
Uploaded on

SPICE MODEL of 2SC6078 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of 2SC6078 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

More in: Technology
  • Full Name Full Name Comment goes here.
    Are you sure you want to
    Your message goes here
    Be the first to comment
    Be the first to like this
No Downloads

Views

Total Views
295
On Slideshare
0
From Embeds
0
Number of Embeds
2

Actions

Shares
Downloads
0
Comments
0
Likes
0

Embeds 0

No embeds

Report content

Flagged as inappropriate Flag as inappropriate
Flag as inappropriate

Select your reason for flagging this presentation as inappropriate.

Cancel
    No notes for slide

Transcript

  • 1. Device Modeling Report COMPONENTS: TRANSISTOR PART NUMBER: 2SC6078 MANUFACTURER: TOSHIBA Bee Technologies Inc.All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 2. TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient Coefficient for Onset of Forward-bias Depletion FC Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 3. ReverseReverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation Emitter Current All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 5. ForwardForward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 6. C-B Capacitance Characteristics Measurement SimulationE-B Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 7. Transistor hFE-IC CharacteristicsCircuit simulation result 1.0K 100 10 1.0 5.0mA 10mA 100mA 1.0A I(vsence)/ IB(Q1) I(vsence)Evaluation circuit v sence 0Vdc Q1 Q2SC6078 V1 6Vdc I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 8. Comparison GraphCircuit simulation result 1000 Measurement Simulation DC CURRENT GAIN hFE 100 10 1 0.01 0.1 1 COLLECTOR CURRENT IC (A)Simulation result hFE Ic(A) Error (%) Measurement Simulation 0.01 185.000 185.120 0.065 0.02 185.000 184.483 -0.279 0.05 180.000 182.362 1.312 0.1 180.000 178.857 -0.635 0.2 170.000 171.883 1.108 0.5 158.000 152.186 -3.680 1 120.000 119.663 -0.281 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 9. VCE(Sat)-IC CharacteristicsCircuit simulation result 500mV 100mV 10mV 10mA 100mA 1.0A V(Q1:c) IC(Q1)Evaluation circuit VC Q1 Q2SC6078 F1 F I1 10 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 10. Comparison GraphCircuit simulation result 1 Measurement COLLECTOR−EMITTE R SATURATION Simulation VOLTAGE, VCE (sat) (V) 0.1 0.01 0.01 0.1 1 COLLECTOR CURRENT IC (A)Simulation result VCE(sat)(V) IC(A) Error (%) Measurement Simulation 0.01 2.50E-02 2.54E-02 1.704 0.1 3.00E-02 2.91E-02 -3.113 1 2.05E-01 2.05E-01 0.010 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 11. VBE(Sat)-IC CharacteristicsCircuit simulation result 5.0V 1.0V 100mV 10mA 100mA 1.0A 2.0A V(Q1:b) IC(Q1)Evaluation circuit VC Q1 Q2SC6078 F1 F I1 10 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 12. Comparison GraphCircuit simulation result 10 Measurement BASE−EMITTER SATURATION VOLTAGE Simulation VBE (sat) (V) 1 0.1 0.01 0.1 1 COLLECTOR CURRENT IC (A)Simulation result VBE(sat)(V) IC(A) Error (%) Measurement Simulation 0.01 0.650 0.666 2.462 0.1 0.753 0.743 -1.328 1 0.995 0.994 -0.101 2 1.220 1.181 -3.197 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 13. Switching CharacteristicsCircuit simulation result 1.0A 0.5A 0A -0.2A 98us 100us 102us 104us 106us 108us IC(Q1) IB(Q1) TimeEvaluation circuit L1 R3 R1 50nH 24 L2 99.99 Q1 R2 Q2SC6078 50nH V1 = -3.96 V1 V2 V2 = 11.03 45.1 24 TD = 1us TR = 50ns TF = 50ns PW = 100us PER = 200us 0Simulation result Measurement Simulation Error (%) tstg (ns) 400 400.146 0.037 tf (ns) 150 150.363 0.242 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 14. Output CharacteristicsCircuit simulation result 3.0A 100mA 50mA 2.0A 20mA 1.0A 10mA IB=5mA 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V IC(Q1) V_V1Evaluation circuit Q1 Q2SC6078 5Vdc I1 V1 120uA 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  • 15. Output Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007