SPICE MODEL of 2SK3934 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK3934
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model) /
ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
3
0
3
6
9
12
15
18
21
24
27
30
0.0 5.0 10.0 15.0 20.0 25.0 30.0
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs(S)
Error (%)
Measurement Simulation
1 4.300 4.101 -4.64
2 5.900 5.702 -3.35
5 8.500 8.728 2.68
10 11.500 11.912 3.58
20 15.800 16.054 1.61
30 19.200 18.978 -1.16

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4
V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
10A
20A
30A
40A
50A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V1
0Vdc
V2
20
0
V3
0Vdc
U1
2SK3934

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5
0.00
10.00
20.00
30.00
40.00
50.00
0.0 2.0 4.0 6.0 8.0 10.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
Error (%)
Measurement Simulation
1 4.500 4.680 4.00
2 4.850 4.884 0.69
5 5.350 5.298 -0.97
10 5.900 5.781 -2.01
20 6.500 6.494 -0.09
40 7.500 7.560 0.80
45 7.800 7.790 -0.13

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
6
0
V3
0Vdc
VDS
0Vdc
V1
10
U1
2SK3934
V_VDS
0V 0.5V 1.0V 1.5V 2.0V
I(V3)
0A
1.5A
3.0A
4.5A
6.0A
7.5A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 7.5A, VGS = 10V Measurement Simulation Error (%)
RDS (on)  0.2300 0.2300 0.00

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7
Time*1mA
0 20n 40n 60n 80n 100n
V(W1:3)
0V
4V
8V
12V
16V
20V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=400V, ID=15A,
VGS=10V
Measurement Simulation Error (%)
Qgs nC 16.000 15.988 -0.08
Qgd nC 22.000 22.046 0.21
Qg nC 59.000 58.988 -0.02
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
VDD
400
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
15
0
U1
2SK3934
D2
Dbreak

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Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
Error (%)
Measurement Simulation
15 319.000 320.260 0.39
20 280.500 277.990 -0.89
50 172.000 174.870 1.67
100 124.000 122.210 -1.44
Simulation
Measurement

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9
0
VDD
197Vdc
V2
TD = 0.9u
TF = 5n
PW = 25u
PER = 30u
V1 = 0
TR = 5n
V2 = 20
U1
2SK3934
L2
50nH
R2
50
R1
50
L1
30nH
RL
26
Time
0.70us 1.05us 1.40us0.40us 1.70us
V(U1:G) V(U1:D)/19.7
0V
5V
10V
14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=7.5A, VDD=200V
VGS=0/10V
Measurement Simulation Error(%)
ton ns 130.000 130.030 0.023

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10
V_V2
0V 4V 8V 12V 16V 20V
I(V3)
0A
10A
20A
30A
40A
50A
Output Characteristic
Circuit Simulation result
Evaluation circuit
V2
20V1
0
0
V3
0Vdc
U1
2SK3934
VGS=5V
8
6
6.5
10
7
7.5

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11
V_VSD
0V 0.4V 0.8V 1.2V 1.6V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
VSD
0
Vsense
0Vdc
U1
2SK3934

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12
0.1
1.0
10.0
100.0
0 0.4 0.8 1.2 1.6
DrainreversecurrentIDR(A)
Source - Drain voltage VSD (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
%Error
Measurement Simulation
0.1 0.6050 0.6038 -0.20
0.2 0.6250 0.6263 0.21
0.5 0.6600 0.6594 -0.09
1 0.6900 0.6897 -0.05
2 0.7250 0.7281 0.42
5 0.8000 0.7974 -0.32
10 0.8700 0.8711 0.13
20 0.9800 0.9793 -0.07
30 1.0700 1.0708 0.07

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Time
4us 8us 12us 16us 20us 24us 28us 32us 36us 40us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Characteristics Unit Measurement Simulation Error (%)
trj us 1.040 1.044 0.40
trb us 1.360 1.361 0.07
trr us 2.400 2.405 0.22
V1
TD = 0.8us
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.40v
TR = 10ns
V2 = 10.60v
R1
50
0
U1
D2SK3934_P

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Reverse Recovery Characteristic Reference
Trj=1.04(us)
Trb=1.36(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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15
V_V1
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.001m
V1
0Vdc
0
R2
100MEG
U1
2SK3934

16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
16
Zener Voltage Characteristic Reference