Free SPICE Model of 1SS187 in SPICE PARK
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Free SPICE Model of 1SS187 in SPICE PARK

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FREE SPICE MODEL of 1SS187 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

FREE SPICE MODEL of 1SS187 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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Free SPICE Model of 1SS187 in SPICE PARK Free SPICE Model of 1SS187 in SPICE PARK Document Transcript

  • Device Modeling ReportCOMPONENTS:DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARDPART NUMBER: 1SS187MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
  • SPICE MODEL*$* P ART NUMBER: 1SS187* M ANUF ACTURER: TOSHIB A* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008.MODEL D1SS187 D+ IS=9.1074E-9+ N=2.0022+ RS=1.0000E- 6+ IKF=29.311E-3+ CJO=2.2105E-12+ M=.21891+ VJ=.42919+ ISR=0+ BV=80+ IBV=500.00E-9+ TT=10.237E-9*$ All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
  • DIODE MODEL PARAMETERSPSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
  • Forward Current CharacteristicCircuit Simulation Result 1.0A 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1Evaluation Circuit R1 0.01m V1 0Vdc D1 1SS187 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
  • Comparison GraphCircuit Simulation Result 0.1 Measurement Simulation Forward current IF (A) 0.01 0.001 0.0001 0.00001 0 0.2 0.4 0.6 0.8 1 1.2 Forward voltage VF (V)Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.00001 0.372 0.362 -2.57 0.00002 0.403 0.398 -1.15 0.00005 0.442 0.446 0.84 0.0001 0.476 0.482 1.21 0.0002 0.510 0.518 1.51 0.0005 0.563 0.565 0.36 0.001 0.596 0.602 0.97 0.002 0.637 0.639 0.25 0.005 0.693 0.689 -0.62 0.01 0.735 0.729 -0.82 0.02 0.780 0.773 -0.90 0.05 0.848 0.844 -0.52 0.1 0.900 0.907 0.77 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
  • Capacitance CharacteristicCircuit Simulation Result 2.5p 2.0p 1.0p 0 300mV 1.0V 10V 50V I(V2)/(80V/1u) V(N11360)Evaluation Circuit V2 0Vdc V2 = 80 V1 V1 = 0 D1 TD = 0 1SS187 TR = 1us TF = 10ns PW = 20us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
  • Comparison GraphCircuit Simulation Result 2.5 Measurement Simulation Junction capacitance Ct (pF) 2 1.5 1 0.5 0 0.3 3 30 Reverse Voltage VR (V)Simulation Result Ct (pF) Vrev (V) %Error Measurement Simulation 0.3 1.967 1.969 0.08 0.5 1.868 1.867 -0.07 1 1.697 1.699 0.11 2 1.518 1.513 -0.36 5 1.271 1.269 -0.19 10 1.089 1.100 0.99 20 0.945 0.949 0.42 50 0.787 0.779 -1.05 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
  • Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.99us 20.01us 20.03us 20.05us 20.07us 20.09us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.1V V1 V2 = 11.1V D1 TD = 22ns 1SS187 TR = 5ns TF = 8ns PW = 20us PER = 50us 0Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 7.00 6.97 -0.43 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-
  • Reverse Recovery Characteristic ReferenceMeasurementTrj =7.0(ns)Trb= 2.4(ns)Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -9-
  • All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 - 10 -