Technical	  development	  in	  commercializing	  printed	  memory	  and	  integrated	  systems	   	  	  	  Christer	  Karl...
Thinfilm	  introducBon	  Memory	  Standalone	  memory	  for	  toys	  and	  games	  	  Memory	  +	  Logic	  Addressable	  me...
Thinfilm	  ferro-­‐electric	  memory	  BoHom	  Electrode	  (BE)	  =	  WLFE	  PolymerTop	  Electrode	  	  (TE)	  =	  BL•  No...
Memory	  product	  development	  •  Mass	  producBon	  (R2R	  prinBng)	  at	  our	  partner	  InkTec	  (South	  Korea)	  	...
•  Test	  speed:	  up	  to	  10M	  memories	  per	  month	  equivalent	  to	  200M	  cells/month.	  •  Step-­‐and-­‐go	  p...
R2R	  tester	  data	  0-­‐signal:	  blue	  dots	  indicate	  polarizaBon	  by	  ferro-­‐electric	  switching.	  1-­‐signal...
ProtecBon	  of	  memories	  • 	  Hard	  scratch	  protecBon:	  Significant	  yield	  drop	  • 	  The	  soluBon	  is	  a	  t...
Transistor	  fabricaBon	  steps	  2.	   4.	  1.	   3.	   5.	  6.	  # Layer Material Initial process Target process- Substr...
p-­‐channel	  OTFTs	  with	  printed	  S/D,	  OSC,	  GI	  and	  G	  L	  =	  ~30	  µm	  W	  =	  650	  µm	  Ci	  =	  4	  nF/...
n-­‐channel	  OTFTs	  with	  printed	  S/D,	  OSC	  and	  G	  L	  =	  ~35	  µm	  W	  =	  2000	  µm	  Ci	  =	  4.5	  nF/cm2...
Temperature	  tag	  	  proof-­‐of-­‐concept	  prototype	  2-­‐bit	  memory	  Thinfilm	TFT	  circuits	  PARC	Thermistor	  br...
Tag	  block	  diagram	  Temp	  sensor	  Threshold	  trigger	  Amplifier/Buffer	  Pulse	  generator	  External	  electronics	...
Q&A	  Further	  quesBons:	  christer@thinfilm.se	  +46	  702	  157921	  
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Thinfilm Electronics Commercializing Printed Memory and Integrated Systems

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Thinfilm Electronics Commercializing Printed Memory and Integrated Systems

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Thinfilm Electronics Commercializing Printed Memory and Integrated Systems

  1. 1. Technical  development  in  commercializing  printed  memory  and  integrated  systems        Christer  Karlsson,  Ph.  D.  CTO  Thin  Film  Electronics  ASA    
  2. 2. Thinfilm  introducBon  Memory  Standalone  memory  for  toys  and  games    Memory  +  Logic  Addressable  memory  for  integraBon    Integrated  Systems  Sensor  tags  Display  tags  Wireless  •  Strong  IP  posi-on  in  unique  and  cri-cal  memory  technology    •  Secured  partnerships  and  other  technology  components  for  integrated  systems    
  3. 3. Thinfilm  ferro-­‐electric  memory  BoHom  Electrode  (BE)  =  WLFE  PolymerTop  Electrode    (TE)  =  BL•  Non-­‐volaBle  •  Rewritable  •  Excellent  retenBon  
  4. 4. Memory  product  development  •  Mass  producBon  (R2R  prinBng)  at  our  partner  InkTec  (South  Korea)    •  Process  development  at  Thinfilm  –  Currently  S2S;  will  be  R2R.    •   Gravure  prinBng  •   Slot  die  coaBng  •   Screen  prinBng    
  5. 5. •  Test  speed:  up  to  10M  memories  per  month  equivalent  to  200M  cells/month.  •  Step-­‐and-­‐go  principle  •  6  memories  are  currently  tested  in  parallel.    R2R  tesBng  5  
  6. 6. R2R  tester  data  0-­‐signal:  blue  dots  indicate  polarizaBon  by  ferro-­‐electric  switching.  1-­‐signal:  red  dots  indicate  polarizaBon  by  bulk  capacitance.    Data  here  from  >  50000  cells  printed  roll-­‐to-­‐roll.    Thinfilm  Electronics  confidenBal  Q1  Q0  Cell  number  Signal  charge  Sorted  (no  defects)  Unsorted  
  7. 7. ProtecBon  of  memories  •   Hard  scratch  protecBon:  Significant  yield  drop  •   The  soluBon  is  a  two-­‐step  coaBng  process:    –  A  first  layer  that  is  a  flexible  and  handle  mechanical  stress  –  A  second  layer  that  is  hard  and  scratch  resistant    Type   Yield  loss  (%)  Cross-­‐linkable  PPG   0%  Natural  rubber   0%  Polyvinylacetate   0%  Cross-­‐linkable  PDMS   Low  Highly  flexible  acrylates   Moderate  Flexible  acrylates   High  Epoxides   High  Epoxide/acrylate  hybride   High  AliphaBc  isocyanate   High  
  8. 8. Transistor  fabricaBon  steps  2.   4.  1.   3.   5.  6.  # Layer Material Initial process Target process- Substrate PEN foil - -1 Planarization Polymer Spin coating Slot die/-2 S/D electrodes Ag Evaporation or Inkjet Gravure3 S/D treatment SAM Spin coating Printing or Immersion4 Semiconductor Organic Spin coating or Inkjet Gravure5 Gate insulator Polymer Spin coating Gravure or Screen6 Gate electrodes Ag Evaporation or Inkjet Gravure
  9. 9. p-­‐channel  OTFTs  with  printed  S/D,  OSC,  GI  and  G  L  =  ~30  µm  W  =  650  µm  Ci  =  4  nF/cm2  µsat  =  ~0.5  cm2/Vs  @  20  V  ION/IOFF  =  ~104  Layer  Material  Deposi-on  process  Source-­‐drain  electrodes  Ag  Gravure  Semiconductor  Organic  Gravure  Gate  insulator  Polymer  Screen  Gate  electrodes  Ag  Gravure  
  10. 10. n-­‐channel  OTFTs  with  printed  S/D,  OSC  and  G  L  =  ~35  µm  W  =  2000  µm  Ci  =  4.5  nF/cm2  µsat  =  ~0.3  cm2/Vs  @  20  V  ION/IOFF  =  ~105  Layer  Material  Deposi-on  process  Source-­‐drain  electrodes  Ag  Gravure  Semiconductor  Organic  Gravure  Gate  insulator  Polymer  Spin  coaBng  Gate  electrodes  Ag  Gravure  
  11. 11. Temperature  tag    proof-­‐of-­‐concept  prototype  2-­‐bit  memory  Thinfilm TFT  circuits  PARC Thermistor  bridge  PST Electrochromic  display  ACREO Backplane  and  Integra-on  Thinfilm  and  PARC 4  printed  devices/technologies  integrated  on  the  same  printed  plasBc  backplane  Trigger  circuitry  supported  by  Flextech  
  12. 12. Tag  block  diagram  Temp  sensor  Threshold  trigger  Amplifier/Buffer  Pulse  generator  External  electronics  Display  Memory  Trigger  circuitry  supported  by  Flextech  •  Basic  funcBonality  achived!  •  CalibraBon  needed  using  current  processes  
  13. 13. Q&A  Further  quesBons:  christer@thinfilm.se  +46  702  157921  
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