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   Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
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Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية

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Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية …

Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
by: Thikra Abbas Mujbil Al- Hilfi, ذكرى عباس مجبل الحلفي
Supervised By: prof. Sabria Alioui

More in: Technology
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  • 1. Cd2SnO4
  • 2. ABSTRACT
  • 3. (CdO, Cd2SnO4)(300 °C)(400,500)°C((Cd(CH3COO)2.2H2O))((SnCl2.2H2O))(XRD)(Polycrystalline)(Cubic)(CdO)(201.6 Å)(Cd2SnO4)(268.3 Å)(CdO)(G.s)(δ)(d)(a)(Cd2SnO4)(300-900)nm(CdO)(60%)(900 nm)(2.31 eV)(Cd2SnO4)(72%)(900 nm)(3.1 eV)(Cd2SnO4,CdO)
  • 4. The Properties Of Thin Films
  • 5. (Cadmium Oxide (CdO))(n-Type)(TCOʼs)(Face Center Cubic (F.C.C.))(CdO)
  • 6. Cadmium Stannate (Cd2SnO4(Cd2SnO42.06-3)eVCd2SnO4n-typeOrthorhombic Structure.
  • 7. Aim of Research(CdO)Cd(CH3COO)2.2H2O)(5%)(Cd2SnO4)(95%)(5%)
  • 8. Experimental Part
  • 9. (Solution Preparation)(1)(CdO)Cd(CH3COO)2.2H2O)(266.52)gm/mol0.1 mol/L2.6652 g100ml)Magnetic Stirrer(15-20)minM = (Wt / MWt). (100/V)(2)(Cd2SnO4)Cd(CH3COO)2.2H2O)(SnCl2.2H2O)(225.63)gm/mol(5%)(95%)(Cd:5%Sn)(300)°CCOOHCHOHCdO 322 2OHOHCdCOOCH 222 2.)3(HCLSnoCd 842OHOHSnClOHCdCOOCH 22222 2.2.)3(2
  • 10. (CdO.Cd2SnO4)-1-Substrate Temperature-(300°C)2-Vertical Distance-(29.5 0.5cm)3-Average Spryer-(8 ml/min)4-Average Time Spryer-15secmin35-Air Pressure-(105 N/m2)
  • 11. measurements
  • 12. SHIMADZU- 6000TypeCu- KαTarget1.54060Wave Length40 kVVoltage30 mACurrent20o-60oRange of (2θ)5 deg/ minSpeed(2)(X-Ray Diffraction Analysis)oA(3)(The Optical Measurements)AbsorbanceTransmittance300–900nm)UV/VIS–SPECROPHOTOMETER/1800BIOTECH
  • 13. Results and Discussions
  • 14. Structural Properties(XRD)(Cd2SnO4,CdO)(Polycrystalline)(Cubic)
  • 15. (CdO)(220),(200),(111)(111)(c),(b)
  • 16. (5%)(300°C)(CdO)(a)(XRD)(2θ )(400°C)(131),(130),(001)(b)(500 C)(121)(c)(Cd2SnO4)
  • 17. 1-(Interatomic Spacing (d)(d)2dsinθ = nλ(d)(CdO)(d)(Cd2SnO4)dÅ(Theory.)dÅ(Measured)2θ(hkl)TemperatureT(°C)Type ofthin film2.717362.71735732.9353(111)300CdO2.352462.352464538.2274(200)1.662761.6627655.1961(220)2.709562.70955933.0328(111)4002.346472.34647438.3288(200)1.659311.659312455.3206(220)2.709722.70971933.0308(111)5002.347492.34748838.3115(200)1.661491.661487155.242(220)2.726752.72672632.8186(111)300Cd:5%Sn2.361182.36143538.0808(200)1.669181.66912254.9659(220)3.302393.30175726.9776(001)400Cd2SnO42.867022.86702131.171(130)2.088742.24460643.2817(131)3.307283.30728626.937(001)5002.868412.86845331.1555(130)2.400792.40078837.429(121)2.093492.09348543.1786(131)
  • 18. 2-(Lattice Constant (a))(a)(ASTM)1/d2 = (h2+k2+l2)/a2(CdO)(4.7066Å)(Cd2SnO4)(9.0663Å)aÅ (Measured)(hkl)TemperatureT(°C)Type of thinfilm4.706601(111)300CdO4.693094(111)4004.693371(111)5004.722827(111)300Cd:5%Sn9.066316(130)400Cd2SnO49.070844(130)500
  • 19. 3-(Grain Size (G.s))(G.s)(CdO)(Cd2SnO4)G.s Åβ(FWHM)(deg.)2θ(hkl)TemperatureT(°C)Type of thinfilm201.6460.456732.9353(111)300CdO225.00120.464633.0328(111)400228.80030.402633.0308(111)500149.50380.615832.8186(111)300Cd:5%Sn268.32260.341731.171(130)400Cd2SnO4224.10760.409131.1555(130)500coskG.s
  • 20. Some Structural ParametersCalculation
  • 21. Tc(hkl)TemperatureT(°C)Type of thinfilm2.0979(111)300CdO0.6084(200)0.29371(220)1.6854(111)4001.0787(200)0.23596(220)1.3889(111)5000.9583(200)0.652778(220)1.37615(111)300Cd:5%Sn1.12844(200)0.49541(220)0.9913(001)400Cd2SnO41.3044(130)0.704(131)0.8657(001)5001.19403(130)1.10448(121)0.83582(131)
  • 22. 2-(Dislocation Density ( ))δ = 1/ (G.s) 2(CdO)( )(Cd2SnO4)×10-5Line/Å2TemperatureT(°C)Type of thinfilm2.4564300CdO1.97514001.910245004.474300Cd:5%Sn1.38895400Cd2SnO41.99107500
  • 23. 3-(Number of Crystals (M)M=t/ (G.s) 3(CdO)(Cd2SnO4)4-Number of Layers (NL)NL=t/G.s(CdO)(Cd2SnO4)NLM/Å2TemperatureT(°C)Type ofthin film9.91840.00024300CdO8.8890.00017564008.741250.0001750013.377590.000599300Cd:5%Sn7.4537130.000104400Cd2SnO48.9242840.000178500
  • 24. 5-Integral Breadth (∆))(XRD)∆=Area/Imax(∆)(β)(Δ)βShapeFactor (Φ)IntegralBreadth(∆)(deg.)β(FWHM)(deg.)TemperatureT(°C)Type of thinfilm0.91340.50.4567300CdO0.84470.550.46464001.17980.4750.40265000.87970.70.6158300Cd:5%Sn0.91120.3750.3417400Cd2SnO40.90910.450.40915006-Shape Factor (Φ))Φ= β/∆
  • 25. Optical Properties(Cd2SnO4,CdO)
  • 26. Transition (T %)(300-900)nm(a)(CdO)(300°C)(300nm)(900nm)(60%)(c),(b)
  • 27. (88%)(900)nm(a)(b)Transmittance(T%)Wavelength λ(nm)(a)(Cd2SnO4)(72%)(900)nm(70%)(500)°C(b)(Cd2SnO4)
  • 28. Absorption (A)(a)(900nm)(c),(b)
  • 29. (Cd2SnO4)(b,a)
  • 30. (α)(α > 104 cm-1)(a)(CdO)(CdO)(c),(b)
  • 31. (Cd2SnO4)(b),(a)(300)°C
  • 32. (Cd2SnO4, CdO)-(αhf)2 = B2 ( hf – Eg )(a)(CdO)(2.31)eVbc
  • 33. (a)(b)(c)(a)(3.3) eV(b),(c)(Cd2SnO4)
  • 34. Reflection Measurement(R)R +T+A=1(a)(CdO)(c),(b)
  • 35. (Cd2SnO4)(b),(a)
  • 36. Extinction Coefficient Measurement(Kₒ)(CdO)Kₒ= αλ/4π(a)(CdO)(c),(b)
  • 37. (b),(a)(Cd2SnO4)
  • 38. Refractive Index Measurement(nₒ)n={(1+R)2 / (1-R)2- (Ko2+1)}1/2+(1+R) / (1-R)(a)(CdO)(c),(b)
  • 39. (b),(a)(Cd2SnO4)
  • 40. Dielectric Constant Measurement (ξ)ξ1ξ2ξ1 = no2- ko2ξ2 = 2 no ko
  • 41. (RealPart of Dielectric Constant (ξ1))(a)(1.38-2.2) eV(2.2) eV(CdO)(c),(b)
  • 42. (c),(b)
  • 43. Imaginary Part of DielectricConstant (ξ2)(a)(1.38-2.4)eV(CdO)(c),(b)
  • 44. (Cd2SnO4)(b),(a)
  • 45. Conclusion)1-CdOCd:5%Sn300°CCd2SnO4500,400°C2-3-CdOCd2SnO44-(CdO)(7-60) %(300-900) nm(8.5-80)%(300-900) nm500°C5-(22-88) %(300-900) nm(15-70) %(300-900) nm500°C6-(CdO,Cd2SnO4) (α>104cm-1)
  • 46. 7-CdO,8-Cd2SnO4,Future work1-(CdO)CdxSnO1-x2-CdxSnO1-x3-Cd2SnO4, CdO4-Cd2SnO4, CdO5-Cd2SnO4