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GaN RF Market 2008

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The need for high power, high frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications. More power, more frequency bands, better linearity and improved efficiency are driving the current development of RF semiconductor devices capable of handling all these specifications at a reasonable price.Up to 2005, Si LDMOS covered about 90% of the high power RF amplification applications in the 2GHz and higher frequency range; the 10% remaining market share was addressed by GaAs pHEMT technology. This equilibrium is soon to be upset considerably by the introduction of Gallium Nitride (GaN) HEMT technology.These GaN devices are now challenging the dominant position of silicon in an industrial playground in which a Power Amplifier (PA) market size of ~$900M is forecast for 2008.Military applications were the first to use WBG devices, especially with the SiC MESFET being developed through broadly financed DARPA and DoD programs in the US. Then in 2006, Eudyna jointly announced with NTT that a first 3G network using GaN HEMT had been deployed in Tokyo for test purposes. New commercial offerings from CREE, RFMD and Nitronex followed, targeting both base-station (3G, WiMAX...) and general purpose applications. In parallel, R&D for space applications remains very strong and the first products are expected to be implemented in the next few years. Recent announcements show that key players are more and more focusing on WiMAX/LTE markets, defocussing on the current 3G/3G+ market for which they claim the time-to-market for WBG devices is now over. With strong penetration of WiMAX/LTE applications, we forecast that the market size for GaN RF transistors could reach a level of about $100m by 2010. The duality between WiMAX and LTE technologies should not widely impact this growth. The battle will take place not only at a performance and reliability level but also at the cost level. Thus, innovative GaN-based substrate makers have a great role to play to help decrease device prices.This report provides a complete analysis of the applications targeted by GaN RF transistors with its key market metrics. It describes the main devices in production or under development as well as the possible alternative substrates that will help to decrease the device price.

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Transcript of "GaN RF Market 2008"

  1. 1. Find Industry reports, Company profilesReportLinker and Market Statistics >> Get this Report Now by email!GaN RF Market 2008Published on July 2008 Report SummaryThe need for high power, high frequency transistors is increasing steadily, commensurate with the huge demand for wirelesstelecommunications. More power, more frequency bands, better linearity and improved efficiency are driving the current developmentof RF semiconductor devices capable of handling all these specifications at a reasonable price.Up to 2005, Si LDMOS covered about 90% of the high power RF amplification applications in the 2GHz and higher frequency range;the 10% remaining market share was addressed by GaAs pHEMT technology. This equilibrium is soon to be upset considerably bythe introduction of Gallium Nitride (GaN) HEMT technology.These GaN devices are now challenging the dominant position of silicon in an industrial playground in which a Power Amplifier (PA)market size of ~$900M is forecast for 2008.Military applications were the first to use WBG devices, especially with the SiC MESFET being developed through broadly financedDARPA and DoD programs in the US. Then in 2006, Eudyna jointly announced with NTT that a first 3G network using GaN HEMThad been deployed in Tokyo for test purposes. New commercial offerings from CREE, RFMD and Nitronex followed, targeting bothbase-station (3G, WiMAX...) and general purpose applications. In parallel, R&D for space applications remains very strong and thefirst products are expected to be implemented in the next few years. Recent announcements show that key players are more andmore focusing on WiMAX/LTE markets, defocussing on the current 3G/3G+ market for which they claim the time-to-market for WBGdevices is now over. With strong penetration of WiMAX/LTE applications, we forecast that the market size for GaN RF transistorscould reach a level of about $100m by 2010. The duality between WiMAX and LTE technologies should not widely impact this growth.The battle will take place not only at a performance and reliability level but also at the cost level. Thus, innovative GaN-basedsubstrate makers have a great role to play to help decrease device prices.This report provides a complete analysis of the applications targeted by GaN RF transistors with its key market metrics. It describesthe main devices in production or under development as well as the possible alternative substrates that will help to decrease thedevice price. Table of ContentTable of contentGlossaryExecutive summaryLatest noteworthy news2007 noteworthy news2006 noteworthy newsGaN RF device market analysis p12GaN RF Market 2008 (From Slideshare) Page 1/7
  2. 2. Find Industry reports, Company profilesReportLinker and Market Statistics >> Get this Report Now by email! Possible applications for GaN devices in RF electronic systems GaN device applications roadmap. Time to market Technology drivers and FOM for GaN: High Frequency, High Power and Linearity GaN RF device market breakdown. 2007 - 2012 comparison 2005-2012 GaN RF device market size. Nominal scenario 2005-2012 GaN RF device market size. Table of data: units / ASP / revenues 2005-2012 GaN RF device market size Alternative pessimistic scenario Analysis of the 2 scenarios. What can we trust in 4 epi-wafer needs for GaN-based RF devices market 2005-2012 Tentative forecast for RF GaN epiwafer market size 2005-2012 Conclusions and perspectivesGaN HEMT state of the art p24 GaN and Silicon FET structure comparison GaN / SiC / Si / GaAs high power RF transistors comparison Microwave frequencies bands. Comparison of Si, SiGe, GaAs, InP and GaN frequency and Vb ranges GaN FET state-of-the-art: Company / Technology / Pmax / Gain / Fmax / PAE / Vds / Gate width Latest GaN RF HEMT results Example of IMEC HEMT GaN/Si Examples of RFMD offer in GaN HEMT (S.I. SiC) Examples of Eudyna offer in GaN HEMT (S.I. SiC) Examples of CREE offer in GaN HEMT & SiC MESFET Examples of Nitronex offer for GaN HEMT (GaN-on-Silicon) Cost breakdown of HEMT process: GaN/SiC (3) Cost breakdown of HEMT process: GaN/Si (4) GaN FET commercialization status & announcementsGaN RF device industrial landscape p39 Food chain & players in GaN RF business (R&D or production) Industrial supply-chain in the US Industrial supply-chain in Europe Industrial supply-chain in Asia Origin of the companies now involved in GaN technology Strategy of Si LDMOS companies over the GaN technologyWireless phone infrastructures: Base stations (BTS) market p46 Market drivers of the GaN for BTS Remote radio head (RRH) antenna Recent announcements in GaN-based technologies for 3G BTS market Wireless-phone infrastructure market shares in 2007 Si LDMOS vs. GaAs pHEMT 2007 status Market shares of Si LDMOS vendors for wireless infrastructure in 2007 WCDMA BTS typical cost distribution Wireless phone base-station price analysis (GSM vs. 3G) Base stations: 2007 value-chain analysis 2005-2012 mobile-phone subscribers in units and AGR (%)GaN RF Market 2008 (From Slideshare) Page 2/7
  3. 3. Find Industry reports, Company profilesReportLinker and Market Statistics >> Get this Report Now by email! Worldwide deployed macro cellular base-stations 2005-2012 by standards Components currently used in base stations Estimation of total accessible market for GaN FET in 3G BTS Number of 4 equivalent wafers to be produced for GaN FET manufacturing for 3G base stations market (Conservative scenario) Number of 4 equivalent wafers to be produced for GaN devices manufacturing for 3G base stations market (Breakthroughscenario)Defense market p63 Market drivers of GaN RF electronics in defense applications Focus on defense applications Worldwide estimation of the Total Accessible Market (TAM) for wide Bandgap RF transistors Roadmap for RF transistors volumes in defense applications 4 equivalent wafers needs in units for GaN MMIC manufacturing for defense market On-going R&D programs in the US for GaN in defense applications Example of US DARPA requests: Wide Band Gap Semiconductors for RF Applications (WBGS-RF) On-going R&D programs in Europe for GaN in defense applications: KorriganSatellite market p71 Market drivers of the GaN electronics in SatComV-SAT terminals market p73 Market drivers of GaN electronics in V-SAT V-SAT market data GaN HEMT opportunities for V-SAT Estimated 4 wafers annual needsCATV market p77 Market drivers of GaN electronics in CATV CATV market data GaN HEMT opportunities for CATV. Estimated device volume and 4 epi-wafer needsWiMAX vs. LTE. The race toward 4G has already started p81 WiMAX & LTE history and definition Positioning of WiMAX & LTE over the data rate and the mobility range WiMAX / LTE technical comparison WiMAX vs. LTE Current positioning of key companies WiMAX and LTE deployment planning WiMAX technology WiMAX standards WiMAX profiles/spectrum bands WiMAX network requirements WiMAX market trends WiMAX players WiMAX players : a complex food chain WiMAX market estimation 2005-2012 subscribers projectionGaN RF Market 2008 (From Slideshare) Page 3/7
  4. 4. Find Industry reports, Company profilesReportLinker and Market Statistics >> Get this Report Now by email! Market drivers for GaN in WiMAX What will be the best GaN substrate for base station application Si or SiC Tentative market estimation for WiMAX BTS and related PA & RF transistors market 2005-2012 worldwide annual volume and related sales for WiMAX BTS infrastructures 2005-2012 annual production of GaN 4 wafers for WiMAX BTS infrastructures Conclusions: How WiMAX vs. LTE and related frequency spectrum choices will impact the GaN RF marketGaN RF devices. European developments p102 European industrial food chain Korrigan : the key R&D GaN military project in Europe HYPHEN: Hybrid Substrates for Competitive HF Electronics GaN-Switchmode: GaN HEMT for base stations Power RF foundries in EuropeGaN RF devices. Japanese developments p109 Japanese NEDO R&D programsGaN material. Current developments p113 Direct growth or buffer approach Composite substrates: wafer bonding approach Picogiga SOITEC (F). SopSiC (Silicon on Poly-SiC) substrate Aonex Technologies, now AmberWave Systems (US) A-Sapph & A-GaN BluGlass. GaN on Glass IMEC (B). GaN on Germanium. Ge (111) IMEC (B). GaN on Silicon Azzurro Semiconductors (D). GaN on Silicon Covalent Materials (J). GaN on Silicon (with 3C-SiC buffer layer) Nitronex (US). GaN on Silicon TDI, now Oxford Instruments (US). GaN/SiC and GaN/Sapphire Hitachi Cable (J). GaN/SI.I SiC and GaN/Sapphire Cermet (US). GaN on ZnO SOD: Silicon On Diamond. Main advantages for GaN growth (1/2) Group4 Lab (US). GaN/Diamond. Double wafer bonding approach sp3 Diamond Technology (US). DOS (Diamond on Si) & SOD Bulk / free-standing GaN wafers status GaN / Silicon epiwafer manufacturers status GaN/Sapphire & GaN/SiC epiwafer manufacturers status Examples of current GaN material pricingMain metrics of the SiC and Sapphire substrate markets p137 Main SiC material manufacturing site locations. Bulk or epi-foundry Material polytypes, doping & orientation commercially available 2006 & 2007 SiC substrate vendor revenues & related market share. Focus on S.I. SiC market Diameter evolution for semi-insulating SiC substrates to 2012GaN RF Market 2008 (From Slideshare) Page 4/7
  5. 5. Find Industry reports, Company profilesReportLinker and Market Statistics >> Get this Report Now by email! 2005-2012 S.I. SiC substrates price evolution for various diameters Map of sapphire suppliers location 2007 Total sapphire vendor revenues (split by Optics & Electronics) 2005-2012 sapphire substrate price projection, split by diameterReview of the main GaN RF devices in production or in development: (Device structure, Main specs, Reliability, )p146 -> 214 CREE Eudyna Freescale Fujitsu KOPIN Matsushita MEI / Panasonic NEC Nitronex OKI RFMD TriQuint Toshiba UCSBGaN RF Market 2008 (From Slideshare) Page 5/7
  6. 6. Find Industry reports, Company profilesReportLinker and Market Statistics >> Get this Report Now by email! Fax Order Form To place an order via fax simply print this form, fill in the information below and fax the completed form to: Europe, Middle East and Africa : + 33 4 37 37 15 56 Asia, Oceania and America : + 1 (805) 617 17 93 If you have any questions please visit http://www.reportlinker.com/notify/contact Order Information Please verify that the product information is correct and select the format(s) you require. GaN RF Market 2008 Product Formats Please select the product formats and the quantity you require. 1 User License--USD 5 821.20 Quantity: _____ Corporate License--USD 8 629.20 Quantity: _____ Contact Information Please enter all the information below in BLOCK CAPITALS Title: Mr Mrs Dr Miss Ms Prof First Name: _____________________________ Last Name: __________________________________ Email Address: __________________________________________________________________________ Job Title: __________________________________________________________________________ Organization: __________________________________________________________________________ Address: __________________________________________________________________________ City: __________________________________________________________________________ Postal / Zip Code: __________________________________________________________________________ Country: __________________________________________________________________________ Phone Number: __________________________________________________________________________ Fax Number: __________________________________________________________________________GaN RF Market 2008 (From Slideshare) Page 6/7
  7. 7. Find Industry reports, Company profilesReportLinker and Market Statistics >> Get this Report Now by email! Payment Information Please indicate the payment method, you would like to use by selecting the appropriate box. Payment by credit card Card Number: ______________________________________________ Expiry Date __________ / _________ CVV Number _____________________ Card Type (ex: Visa, Amex…) _________________________________ Payment by wire transfer Crédit Mutuel RIB : 10278 07314 00020257701 89 BIC : CMCIFR2A IBAN : FR76 1027 8073 1400 0202 5770 189 Payment by check UBIQUICK SAS 16 rue Grenette – 69002 LYON, FRANCE Customer signature:   Please note that by ordering from Reportlinker you are agreeing to our Terms and Conditions at http://www.reportlinker.com/index/terms Please fax this form to: Europe, Middle East and Africa : + 33 4 37 37 15 56 Asia, Oceania and America : + 1 (805) 617 17 93GaN RF Market 2008 (From Slideshare) Page 7/7

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