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3D-packaging technology is a cost-competitive solution to manage the increasingly limited \'real estate\' available in consumer applications. One major challenge is through silicon via (TSV) formation using the Bosch process. The alternating and repeated use of etching and passivation chemistries poses various challenges to photoresist design, such as excellent resolution, vertical profiles, high etch resistance, and simple removal. We discuss lithographic properties and performance of a new negative resist concept designed for full compatibility with the Bosch process with excellent coating uniformity over a film thickness range from < 10 to > 120 um and aspect ratios exceeding 5:1. The material combines short process times with excellent etch resistance and residue-free removal with standard strippers, thus facilitating the most challenging process of advanced 3D-packaging concepts.